30/1/03
DB92651m-AAS/A3
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The TLP627 is an optically coupled isolator
consisting of infrared light emitting diode and a
high voltage NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 4 pin dual in line
plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh Current Transfer Ratio ( 1000% min)
lHigh BVCEO (300V min.)
lLow input current 1mA IF
APPLICATIONS
lModems
lCopiers, facsimiles
lNumerical control machines
lSignal transmission between systems of
different potentials and impedances
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
TLP627X
TLP627
10.16
SURFACE MOUNT
0.26
7.62
OPTION G
OPTION SM
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
0.26
13°
Max
2.54 Dimensions in mm
5.08
4.08
4
3
1
2
10.46
9.86
0.6
0.1 1.25
0.75
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 300V
Collector Current IC150mA
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
DB92651m-AAS/A3
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.0 1.15 1.3 VIF = 10mA
Reverse Current (IR)10 µA VR = 4V
Output Collector-emitter Breakdown (BVCEO )300 VIC = 0.1mA
Emitter-collector Breakdown (BVECO )0.3 VIE = 0.1mA
Collector-emitter Dark Current (ICEO )10 200 nA VCE = 200V
Coupled Current Transfer Ratio (CTR) 1000 4000 %1mA IF , 1V VCE
Saturated CTR (CTRSAT)500 %10mA IF , 1V VCE
Collector-emitter Saturation VoltageVCE(SAT) 1.2 V10mA IF , 100mA IC
Collector-emitter Saturation VoltageVCE(SAT) 1.0 V1mA IF , 10mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x10 10 VIO = 500V (note 1)
Input-output Capacitance Cf 1pF V = 0, f =1MHz
Output Rise Time tr 40 µsVCC = 10V, IC= 10mA,
Output Fall Time tf 15 µsRL = 100
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
30/1/03
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC
IC = 10mA
Input
FIGURE 1
100