NTE460
Silicon P–Channel JFET Transistor
AF Amp
Absolute Maximum Ratings:
Drain–Gate Voltage, VDG 20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Gate–Source Voltage, VGSR 20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, IG10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD0.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25°C 1.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V(BR)GSS IG = 10µA, VDS = 0 20 – – V
Gate Reverse Current IGSS VGS = 10V, VDS = 0 – – 10 nA
VGS = 10V, VDS = 0, TA = +150°C – – 10 µA
ON Characteristics
Zero–Gate–Voltage Drain Current IDSS VDS = –10V, VGS = 0, Note 1 2.0 – 6.0 mA
Gate–Source Voltage VGS VDG = –15V, ID = 10µA – – 6.0 V
Drain–Source Resistance rDS ID = 100µA, VGS = 0 – – 800 Ω
Small–Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 10V, ID = 2mA, f = 1kHz, Note 1 1500 – 3000 µmhos
VDS = 10V, ID = 2mA, f = 10MHz, Note 1 1350 – – µmhos
Output Admittance |yos| VDS = 10V, ID = 2mA, f = 1kHz – – 40 µmhos
Reverse Transfer Conductance |yrs| VDS = 10V, ID = 2mA, f = 1kHz – – 0.1 µmhos
Input Conductance |yis| VDS = 10V, ID = 2mA, f = 1kHz – – 0.2 µmhos
Inpu Capacitance Ciss VDS = 10V, VGS = 1V, f = 1MHz – – 20 pF
Functional Characteristics
Noise Figure NF VDS = –5V, ID = 1mA, Rg = 1MΩ, f = 1kHz – – 3.0 dB
Note 1. Pulse Test: PulseWidth ≤ 630ms, Duty Cycle ≤ 10%.