Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
• Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
• High Associated Gain:
18.5 dB Typical at 1.0 GHz
13.5 dB Typical at 2.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
AT-41485
85 Plastic Package
Description
Agilent’s AT-41485 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
41485 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigi-
tated geometry yields an interme-
diate sized transistor with imped-
ances that are easy to match for
low noise and moderate power
applications. Applications include
use in wireless systems as an LNA,
gain stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41485 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
2
AT-41485 Absolute Maximum Ratings Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
ICCollector Current mA 60
PTPower Dissipation[2,3] mW 500
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[2,4]:
θjc = 155°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 73°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S21E|2Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 1.0 GHz dB 17.5
f = 2.0 GHz 11.5
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 18.5
VCE = 8 V, IC = 25 mA
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0
NFOOptimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.4 1.8
f = 2.0 GHz 1.7
f = 4.0 GHz 3.0
GAGain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 17.5 18.5
f = 2.0 GHz 13.5
f = 4.0 GHz 9.5
fTGain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA — 30 150 270
ICBO Collector Cutoff Current; VCB = 8 V µA 0.2
IEBO Emitter Cutoff Current; VEB = 1 V µA 1.0
CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.25
Notes:
1. For this test, the emitter is grounded.
3
AT-41485 Typical Performance, TA = 25°C
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10 mA.
GAIN (dB)
I
C
(mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
GAIN (dB)
0 10203040
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
10 V
4 V
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
I
C
(mA)
GAIN (dB)
I
C
(mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
24
20
16
12
8
4
G
1 dB
(dB) P
1 dB
(dBm)
0 10203040
P
1dB
G
1dB
24
21
18
15
12
9
6
3
0
8
6
4
2
0
NF (dB)
4
3
2
1
NF
O
(dB)
0.5 2.01.0 3.0 4.0 5.0
16
15
14
13
12
G
A
G
A
NF
O
NF
O
G
A
NF
O
NF
50 Ω
6 V
0 10203040
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
6
4
2
0
NF
O
(dB)
16
14
12
10
8
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
I
C
(mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
20
16
12
8
4
0
|S
21E
|
2
GAIN (dB)
0 10203040
1.0 GHz
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S
21E
|
2
10 V
4 V
6 V
4
AT-41485 Typical Scattering Parameters, Common Emitter,
ZO = 50 Ω, TA= 25°C, VCE =8 V, I
C= 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .74 -40 28.2 25.80 156 -35.6 .017 81 .93 -14
0.5 .61 -126 21.9 12.46 108 -29.2 .035 44 .57 -31
1.0 .57 -161 16.6 6.80 87 -27.9 .040 38 .46 -33
1.5 .57 -180 13.4 4.67 75 -25.7 .052 47 .43 -34
2.0 .58 166 11.0 3.55 64 -24.5 .060 54 .41 -38
2.5 .59 160 9.3 2.92 59 -23.3 .068 58 .40 -39
3.0 .61 150 7.7 2.42 50 -21.9 .080 63 .39 -46
3.5 .62 142 6.4 2.09 41 -20.8 .091 61 .41 -54
4.0 .62 134 5.3 1.84 32 -19.5 .106 59 .42 -62
4.5 .62 125 4.3 1.65 24 -18.4 .120 57 .43 -67
5.0 .63 115 3.5 1.50 15 -17.2 .138 54 .44 -73
5.5 .65 103 2.7 1.37 6 -16.1 .157 49 .43 -78
6.0 .69 92 1.8 1.24 -4 -15.3 .172 46 .40 -86
AT-41485 Typical Scattering Parameters, Common Emitter,
ZO = 50 Ω, TA= 25°C, VCE =8 V, I
C= 25 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .55 -68 32.0 40.01 146 -40.9 .009 57 .85 -19
0.5 .58 -153 23.1 14.20 99 -32.7 .023 52 .47 -29
1.0 .58 -177 17.4 7.39 82 -29.8 .032 63 .41 -28
1.5 .58 169 14.0 5.01 71 -27.3 .043 60 .39 -30
2.0 .60 158 11.6 3.78 61 -24.6 .059 64 .38 -36
2.5 .60 153 9.8 3.09 58 -23.7 .065 71 .36 -39
3.0 .63 147 8.1 2.55 48 -21.7 .082 68 .35 -47
3.5 .64 140 6.9 2.21 39 -20.7 .092 67 .37 -56
4.0 .64 133 5.8 1.94 31 -19.4 .107 65 .39 -64
4.5 .64 125 4.8 1.74 23 -18.1 .125 63 .40 -71
5.0 .64 115 4.0 1.58 14 -17.1 .140 56 .41 -78
5.5 .66 105 3.2 1.45 5 -15.9 .160 50 .40 -82
6.0 .70 94 2.4 1.32 -5 -15.1 .175 47 .37 -91
A model for this device is available in the DEVICE MODELS section.
AT-41485 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq. NFOΓopt
GHz dB Mag Ang RN/50
0.1 1.3 .12 5 0.17
0.5 1.3 .10 25 0.17
1.0 1.4 .06 50 0.16
2.0 1.7 .25 172 0.16
4.0 3.0 .48 -131 0.24
5
85 Plastic Package Dimensions
13
4
2
5° TYP.
45°
EMITTER
EMITTER
COLLECTOR
BASE
.085
2.15
.286 ± .030
7.36 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
mm
.020
.51
.07
0.43
.060 ± .010
1.52 ± .25 .006 ± .002
.15 ± .05
0.143 ± 0.015
3.63 ± 0.38
414
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-8926E (11/99)
