tm
April 2008
FFP08S60SN
©2008 Fairchild Semiconductor Corporation
FFP08S60SN Rev. A www.fairchildsemi.com1
STEALTH II Rectifier
TM
FFP08S60SN
Features
• High Speed Switching, trr < 25ns @ IF = 8A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
8A, 600V STEALTHTM II Rectifier
The FFP08S60SN is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling o f boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 89oC 8 A
IFSM Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 60 A
TJ, TSTG Operating and Storage Temperature Range -65 to +150 oC
Symbol Parameter Ratings Units
RθJC Maximum Thermal Resistance, Junction to Case 3.6 oC/W
Device Marking Device Package Reel Size Tape Width Quantity
F08S60SN FFP08S60SNTU TO220-2L - - 50
1. Cathode 2. Anode
1. Cathode 2. Anode
TO-220-2L
FFP08S60SN
FFP08S60SN Rev. A www.fairchildsemi.com2
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Min. Typ. Max. Units
VFM1IF = 8A
IF = 8A TC = 25oC
TC = 125oC-
-2.7
2.1 3.4
-V
IRM1VR = 600V
VR = 600V TC = 25oC
TC = 125oC-
--
-100
500 µA
trr IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC-13-ns
trr
Irr
S factor
Qrr
IF = 8A, di/dt = 200A/µs, VR = 390V TC = 25oC
-
-
-
-
15
2.5
0.4
19
25
-
-
-
ns
A
nC
trr
Irr
S factor
Qrr
IF = 8A, di/dt = 200A/µs, VR = 390V TC = 125oC
-
-
-
-
32
3.8
0.7
62
-
-
-
-
ns
A
nC
WAVL Avalanche Energy ( L = 40mH) 10 - - mJ
Test Circuit and Waveforms
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
FFP08S60SN
FFP08S60SN Rev. A www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current Figure 2. Typical Reverse Current vs.
Reverse Voltage
Figure 3.Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 5. Typical Reverse Recovery
Current vs. di/dt Figure 6. Forward Current Derating Curve
100 200 300 400 500 600
0.001
0.01
0.1
1
10
40
TC = 75oC
TC = 25oC
TC = 125oC
Reverse Current , IR [µA]
Reverse Voltage, VR [V]
10
012345
0.1
1
10
20
TC = 125oC
TC = 75oC
Forward Current, IF [A]
Forward Voltage, VF [V]
TC = 25oC
0.1 1 10 100
0
10
20
30
40
50 Typical Capacitance
at 0V = 43 pF
Capacitances , Cj [pF]
Reverse V olta ge, V R [V] 100 200 300 400 500 600
10
20
30
40 IF = 8A
TC = 75oC
TC = 25oC
TC = 125oC
Reverse Recovery Time, trr [ns]
di/dt [A/µs]
100 200 300 400 500 600
0
2
4
6
8
10
IF = 8A
TC = 125oC
TC = 25oC
TC = 75oC
Reverse Recovery Current, Irr [A]
di/d t [A/µs]25 50 75 100 125 150
0
5
10
15
Average Forward Current, IF(AV) [A]
Case temperature, TC [oC]
FFP08S60SN
FFP08S60SN Rev. A www.fairchildsemi.com
4
Mechanical Dimensions
Dimensions in Millimeters
TO220 2L
Rev. I33
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its gl obal
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTIC E TO ANY PROD UCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TH ESE SPECIFI CATIONS DO N OT EXPAND THE TERMS OF FAIRCHILD ’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in a significant injury to the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP-SPM™
Power220®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
FFP08S60SN
FFP08S60SN Rev. A www.fairchildsemi.com
5
