©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2669
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
ICCollector Current 30 mA
PCCollector Power Dissipation 200 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC=100µA, IE=0 35 V
BVCEO Collect or-E mitter Break down Voltage IC=5mA, IB=0 30 V
BVEBO E mitter-B ase Break down Voltage IE=10µA, IC=0 4 V
ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 µA
IEBO Emitter Cut-off Current VEB=4V, IC=0 0.1 µA
hFE DC Current Gain VCE=12V, IC=2mA 40 240
VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.65 0.70 0.75 V
VCE (sat) Collector-E mitter Satu ration Voltage I C=10mA, IB=1mA 0.1 0.4 V
fTCurrent Gain Bandwidth Product VCE=10V, IC=1mA 100 250 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 2.0 3.2 pF
Classification R O Y
hFE 40 ~ 80 70 ~ 140 120 ~ 240
KSC2669
FM RADIO RF AMP, MIX, CONV, OSC, I F AMP
• High Current Gain Bandwidth Product : fT=250MHz (TYP.)
1.Emitter 2. Collector 3. Base
TO-92S
1
©2002 Fairchild Semiconductor Corporation
KSC2669
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0246810
0
2
4
6
8
10 IB = 90µA
IB = 10µA
IB = 20µA
IB = 80µA
IB = 70µA
IB = 60µA
IB = 50µA
IB = 40µA
IB = 30µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100
10
100
1000
VCE=12V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
10
VCE(sat)
IC=10IB
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA] , COLLECT OR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
4
8
12
16
20
24
28
32
VCE=12V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100
0.1
1
10 f = 1 MHz
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR BA SE VOL TAGE
110
10
100
1000
VCE = 10V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
4.00 ±0.20
3.72 ±0.20
2.86 ±0.20
2.31 ±0.20
3.70 ±0.20
0.77 ±0.10 14.47 ±0.30
(1.10)
0.49 ±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35 +0.10
–0.05
TO-92S
Package Dimensions
KSC2669
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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