MPS8599RLRMG - ON Semiconductor - Datasheet.Directory

April, 2007 − Rev. 0 1Publication Order Number:

MPS8099/D

NPN − MPS8099; PNP −

MPS8599

Preferred Device

Amplifier Transistors

Voltage and Current are Negative

for PNP Transistors

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 80 Vdc

Collector−Base Voltage VCBO 80 Vdc

Emitter−Base Voltage VEBO 4.0 Vdc

Collector Current − Continuous IC500 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD625

5.0 mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

(Note 1) RqJA 200 °C/W

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. RqJA is measured with the device soldered into a typical printed circuit board.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

COLLECTOR

BASE

EMITTER

NPN

COLLECTOR

BASE

EMITTER

PNP

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

12312

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

MPS

8x99

AYWW G

x = 0 or 5

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

NPN − MPS8099; PNP − MPS8599

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2)

(IC = 10 mAdc, IB = 0) V(BR)CEO 80 − Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) V(BR)CBO 80 − Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) ICES − 0.1 mAdc

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0) ICBO − 0.1 mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0) IEBO − 0.1 mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 100 mAdc, VCE = 5.0 Vdc)

hFE 100

100

300

−

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 5.0 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat) −

−0.4

0.3

Vdc

Base−Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) 0.6 0.8 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT150 − MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.

NPN − MPS8099; PNP − MPS8599

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping†

MPS8099 TO−92 5000 Units / Bulk

MPS8099G TO−92

(Pb−Free) 5000 Units / Bulk

MPS8099RLRA TO−92 2000 / Tape & Reel

MPS8099RLRAG TO−92

(Pb−Free) 2000 / Tape & Reel

MPS8099RLRP TO−92 2000 / Ammo Pack

MPS8099RLRPG TO−92

(Pb−Free) 2000 / Ammo Pack

MPS8599RLRA TO−92 2000 / Tape & Reel

MPS8599RLRAG TO−92

(Pb−Free) 2000 / Tape & Reel

MPS8599RLRMG TO−92

(Pb−Free) 2000 / Ammo Pack

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

Figure 1. Thermal Response

t, TIME (ms)

1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

0.03

0.02

0.1

0.07

0.05

0.01

0.3

0.2

1.0

0.7

0.5

r(t), NORMALIZED TRANSIENT

THERMAL RESISTANCE

ZqJC(t) = r(t) • RqJC

TJ(pk) − TC = P(pk) ZqJC(t)

ZqJA(t) = r(t) • RqJA

TJ(pk) − TA = P(pk) ZqJA(t)

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t1

(SEE AN469)

DUTY CYCLE, D = t1/t2

P(pk)

D = 0.5

0.2

0.1

0.02 0.01

SINGLE PULSE

0.05

Figure 2. Switching Time Test Circuits

OUTPUT

TURN−ON TIME

−1.0 V VCC

+40 V

* CS t 6.0 pF

100

Vin

5.0 mF

tr = 3.0 ns

+10 V

5.0 ms

OUTPUT

TURN−OFF TIME

+VBB VCC

+40 V

* CS t 6.0 pF

100

Vin

5.0 mF

tr = 3.0 ns

5.0 ms

*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All V oltage Polarities

NPN − MPS8099; PNP − MPS8599

http://onsemi.com

Figure 3. Current−Gain − Bandwidth Product Figure 4. Current−Gain − Bandwidth Product

Figure 5. Capacitance Figure 6. Capacitance

1002.0

IC, COLLECTOR CURRENT (mA)

300

200

100

IC, COLLECTOR CURRENT (mA)

−100−10

200

100

10 1000.1

VR, REVERSE VOLTAGE (VOLTS)

6.0

VR, REVERSE VOLTAGE (VOLTS)

−1.0 −100−0.1 −2.020

TJ = 25°C

fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

NPN PNP

C, CAPACITANCE (pF)

3.0 5.0 7.0 10 20 30 50 70 −2.0 −3.0 −5.0 −7.0 −20 −30 −50 −70

300

fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

501.0 2.0 5.00.2 0.5

4.0

2.0

Cibo

Cobo

−0.2 −0.5 −5.0 −10 −20 −50

TJ = 25°C

C, CAPACITANCE (pF)

1.0

VCE = 1.0 V

5.0 V

TJ = 25°C

VCE = −1.0 V

−5.0 V

−1.0

6.0

TJ = 25°C

4.0

2.0

Cibo

Cobo

8.0 8.0

Figure 7. Switching Times Figure 8. Switching Times

2010

IC, COLLECTOR CURRENT (mA)

200

100

IC, COLLECTOR CURRENT (mA)

−10

500

200

100

−100100

t, TIME (ns)

50 200

1.0 k

500

VCC = 40 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

−50 −200

1.0 k

300

700

30 70

td @ VBE(off) = 0.5 V

300

700

−70−20 −30

VCC = −40 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

td @ VBE(off) = −0.5 V

NPN − MPS8099; PNP − MPS8599

http://onsemi.com

Figure 9. Active−Region Safe Operating Area Figure 10. Active−Region Safe Operating Area

Figure 11. DC Current Gain Figure 12. DC Current Gain

2.00.2

IC, COLLECTOR CURRENT (mA)

400

200

100

, DC CURRENT GAIN

TJ = 125°C

101.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

500

200

100

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

−10 −50−1.0

−500

−200

−100

−50

−20

−10

−2030

IC, COLLECTOR CURRENT (mA)

−2.0 −5.0

−1.0 k

2.0 5.0 50

1.0 k

IC, COLLECTOR CURRENT (mA)

MPS8098

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPS8099

10070203.0 7.0

1.0 3.0 5.0

VCE = 5.0 V

20 10030 50 200

hFE

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

, DC CURRENT GAINhFE

700

300

MPS8598

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPS8599

−3.0 −7.0 −30 −10

−70

−30

−70

−300

−700

0.3 0.5 −2.0−0.2

300

200

100

−10

TJ = 125°C

−1.0 −5.0

VCE = −5.0 V

−20 −100−50 −200

25°C

−55°C

−0.5

DUTY CYCLE ≤ 10% DUTY CYCLE ≤ 10%

NPN PNP

Figure 13. “ON” Voltages Figure 14. “ON” Voltages

10 2001.0

IC, COLLECTOR CURRENT (mA)

1.0

0.8

0.6

0.4

0.2

100

TJ = 25°C

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

0.2 2.0 20 50

IC, COLLECTOR CURRENT (mA)

0.5 5.0 10 2001.0

1.0

0.8

0.6

0.4

0.2

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

0.2 2.0 20 50

0.5 5.0

NPN − MPS8099; PNP − MPS8599

http://onsemi.com

Figure 15. Collector Saturation Region Figure 16. Collector Saturation Region

Figure 17. Base−Emitter Temperature Coefficient Figure 18. Base−Emitter Temperature Coefficient

1000.5

IC, COLLECTOR CURRENT (mA)

−1.0

−1.4

−1.8

−2.2

−2.6

−3.0

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)

RVB , TEMPERATURE COEFFICIENT (mV/ C)

RqVB FOR VBE

q°

RVB , TEMPERATURE COEFFICIENT (mV/ C)

q°

, COLLECTOR−EMITTER VOLTAGE (VOLTS)VCE

1.0 2.0 5.0 20 50 200 1000.2 101.0 2.0 5.0 20 50 200

0.1 100.05

2.0

1.6

1.2

0.8

0.4

1.0

TJ = 25°C

IC =

100 mA

IC =

50 mA

IC =

200 mA

IC =

20 mA

IC =

10 mA

202.0 5.00.2 0.5

0.2

−55°C TO 125°C

−1.0

−1.4

−1.8

−2.2

−2.6

−3.0

RqVB FOR VBE

−55°C TO 125°C

0.5

0.02

0.1 100.05

2.0

1.6

1.2

0.8

0.4

1.0

TJ = 25°C

IC =

100 mA

IC =

50 mA

IC =

200 mA

IC =

20 mA

IC =

10 mA

202.0 5.00.2 0.50.02

NPN PNP

NPN − MPS8099; PNP − MPS8599

http://onsemi.com

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 −−−

N2.04 2.66

P1.50 4.00

R2.93 −−−

V3.43 −−−

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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MPS8099/D

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