TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 1 (12)
Optocoupler with Phototransistor Output
Order Nos. and Classification table is on sheet 2.
Description
The TCDT1100(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance between
input and output for highest safety requirements.
95 10531 95 10532
Applications
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
D
For application class I – IV at mains voltage ≤ 300 V
D
For application class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, computer peripheral
interface, microprocessor system interface, line
receiver.
These couplers perform safety functions according to the following equipment standards:
D
VDE 0884
Optocoupler providing protective separation
D
VDE 0804
Telecommunication apparatus and data processing
D
VDE 0805/IEC 950/EN 60950
Office machines (applied for reinforced isolation for
mains voltage ≤ 400 VRMS)
D
VDE 0860/IEC 65
Safety for mains-operated electronic and related
household apparatus
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
2 (12)
Features
D
Approvals:
BSI: BS EN 41003, BS EN 60065 (BS 415)
BS EN 60950 (BS 7002)
Certificate number 7081 and 7402
FIMKO (SETI): EN 60950
Certificate number 41400
Underwriters Laboratory (UL) 1577
recognized-file No. E-76222
VDE 0884 Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D
Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
D
Rated isolation voltage (RMS includes DC)
VlOWM = 600 VRMS (848 V peak)
D
Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D
Thickness through insulation ≥ 0.75 mm
General features:
D
Base not connected
D
CTR offered in 4 groups
D
Isolation materials according to UL94–VO
D
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore extra low coupling capacity
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
Coupling System A
Order Schematic
Part Numbers CTR-Ranking
TCDT1 100/ TCDT1100G > 40%
TCDT1 101/ TCDT1101G 40 to 80%
TCDT1 102/ TCDT1102G 63 to 125%
TCDT1 103/ TCDT1103G 100 to 200%
Suffix: G = Leadform 10.16 mm
Pin Connection
654
23
1
nc CE
A (+) C (–) nc
94 9222
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 3 (12)
Absolute Maximum Ratings
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Reverse voltage VR5 V
Forward current IF60 mA
Forward surge current tp ≤ 10
m
s IFSM 3 A
Power dissipation Tamb ≤ 25°C PV100 mW
Junction temperature Tj125 °C
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7 V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 25°C Pv150 mW
Junction temperature Tj125 °C
Coupler
Parameters Test Conditions Symbol Value Unit
Isolation test voltage (RMS) VIO 3.75 kV
Total power dissipation Tamb ≤ 25°C Ptot 250 mW
Ambient temperature range Tamb –55 to +100 °C
Storage temperature range Tstg –55 to +125 °C
Soldering temperature 2 mm from case t ≤ 10 s Tsd 260 °C
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
4 (12)
Maximum Safety Ratings 1) (according to VDE 0884)
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current Isi 130 mA
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation Tamb ≤ 25°C Psi 265 mW
Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage VIOTM 6 kV
Safety temperature Tsi 150 °C
1) This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Derating Diagram
0 25 50 75 125
0
50
100
150
200
300
Tamb ( °C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR Diode
Isi ( mA )
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 5 (12)
Electrical Characteristics Tamb = 25°C
Input (Emitter)
Parameters Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA VF1.25 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Output (Detector)
Parameters Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA VCE0 32 V
Emitter collector voltage IE = 100
m
A VEC0 7 V
Collector emitter
cut off current VCE = 20 V, If = 0, E = 0 ICE0 200 nA
Coupler
Parameters Test Conditions Symbol Min. Typ. Max. Unit
AC isolation test voltage
(RMS) f = 50 Hz, t = 1 s VIO 2) 3.75 V
Collector/emitter
saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V
Cut off frequency VCE = 5 V, IF = 10 mA,
RL = 100
W
fc110 kHz
Coupling capacitance f = 1 MHz Ck0.3 pF
2) Related to standard climate 23/50 DIN 50014
Current Transfer Ratio (CTR)
Parameters Test Conditions Type Symbol Min. Typ. Max. Unit
IC/IFVCE = 5 V, IF = 10 mA TCDT1100(G) CTR 0.40
IC/IFVCE = 5 V, IF = 10 mA TCDT1101(G) CTR 0.40 0.80
IC/IFVCE = 5 V, IF = 10 mA TCDT1102(G) CTR 0.63 1.25
IC/IFVCE = 5 V, IF = 10 mA TCDT1103(G) CTR 1.00 2.00
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
6 (12)
Switching Characteristics (Typical Values)
VS = 5 V
Type
RL = 100
W
(see figure 1) RL = 1 k
W
(see figure 2)
T
ype td[
m
s] tr[
m
s] ton[
m
s] ts[
m
s] tf[
m
s] toff[
m
s] IC[mA] ton[
m
s] toff[
m
s] IF[mA]
TCDT1100(G) to
TCDT1103(G) 4.0 7.0 11.0 0.3 6.7 7.0 5.0 25.0 42.5 10.0
Channel I
Channel II
100
W
50
W
+ 5 V
Oscilloscope
RL
w
1 M
W
CL
v
20 pF
IC = 5 mA;
IF
IF
RG= 50
W
tp
tp= 50 ms
T= 0.01
0
95 10900
Adjusted through
input amplitude
Figure 1. Test circuit
Channel I
Channel II
1 k
W
50
W
+ 5 V
Oscilloscope
RL
w
1 M
W
CL
v
20 pF
IC
IF = 10 mA
IF
RG= 50
W
tp
tp= 50
m
s
T= 0.01
0
95 10843
Figure 2. Test circuit, saturated operation
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 7 (12)
Insulation Rated Parameters (according to VDE 0884)
Parameters Test Conditions Symbol Min. Typ. Max. Unit
Routine test 100%, ttest = 1 s Vpd 1.6 kV
Partial discharge
test voltage
Lot test tTr = 10 s,
ttest
=
60
s
VIOTM 6 kV
t
es
t
vo
lt
age
ot test
(sample test)
t
test
=
60
s
(see figure 3) Vpd 1.3 kV
VIO = 500 V RIO 1012
W
Isolation resistance
VIO = 500 V,
Tamb = 100°CRIO 1011
W
I
so
l
a
ti
on res
i
s
t
ance VIO = 500 V,
Tamb = 150°C
(construction test only)
RIO 109
W
VIOTM
VPd
VIOWM
VIORM
V
t4
t3ttest
tstres
t2
t1
t
0
13930
tTr = 60 s
t1, t2= 1 to 10 s
t3, t4= 1 s
ttest = 10 s
tstres = 12 s
Figure 3. Test pulse diagram for sample test according to DIN VDE 0884
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
8 (12)
Typical Characteristics (Tamb = 25°C, unless otherwise specified)
0
50
100
150
200
250
300
0 40 80 120
P – Total Power Dissipation ( mW )
Tamb – Ambient Temperature ( °C )96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 4. Total Power Dissipation vs. Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 5. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
Tamb – Ambient Temperature ( °C )96 11920
CTR – Relative Current Transfer Ratio
rel
VCE=5V
IF=10mA
Figure 6. Rel. Current T ransfer Ratio vs. Ambient Temperature
0255075
1
10
100
1000
10000
I – Collector Dark Current,
CEO
Tamb – Ambient Temperature ( °C )
100
95 11026
with open Base ( nA )
VCE=20V
IF=0
Figure 7. Collector Dark Current vs. Ambient Temperature
0.1 1 10
0.1
1
10
100
VCE – Collector Emitter Voltage ( V )
100
95 11054
I – Collector Current ( mA )
C
5mA
2mA
1mA
IF=50mA 20mA
10mA
Figure 8. Collector Current vs. Collector Emitter Voltage
110
0
0.2
0.4
0.6
0.8
1.0
V – Collector Emitter Saturation Voltage ( V )
CEsat
IC – Collector Current ( mA )
100
95 11055
CTR=50%
20%
10%
Figure 9. Collector Emitter Sat. Voltage vs. Collector Current
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 9 (12)
Typical Characteristics (Tamb = 25°C, unless otherwise specified)
0.1 1 10
1
10
100
1000
CTR – Current Transfer Ratio ( % )
IF – Forward Current ( mA )
100
95 11057
VCE=5V
Figure 10. Current Transfer Ratio vs. Forward Current
0 5 10 15
0
10
20
30
40
50
IF – Forward Current ( mA )
20
95 11017
t / t – Turn on / Turn off Time ( s )
off
m
on
Saturated Operation
VS=5V
RL=1k
W
toff
ton
Figure 11. Turn on / off Time vs. Forward Current
02 46
I
C
– Collector Current ( mA )
10
95 11016
t / t – Turn on / Turn off Time ( s )
off
m
on
Non Saturated
Operation
VS=5V
RL=100
W
toff
ton
0
5
10
15
20
8
Figure 12. Turn on / off Time vs. Collector Current
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
10 (12)
Dimensions in mm
Leadform 10.16. mm (G-type)
14771
weight: ca. 0.50 g
creeping distance:
y
8 mm
air path:
y
8 mm
after mounting on PC board
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97 11 (12)
Dimensions in mm
14770
weight: 0.50 g
creeping distance:
y
6 mm
air path:
y
6 mm
after mounting on PC board
TCDT1100(G) Series
TELEFUNKEN Semiconductors
Rev . A2, 12-Dec-97
12 (12)
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It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
