9 SEMICONDUC J OR Sa TECHNICAL DATA 2N2369A. 2N3227 2N4449. NPN Silicon Small-Signal Transistors . . designed for general-purpose switching applications. MAXIMUM RATINGS Rating Symbal | 2N2369A 2N3227 2N4440 Unit Collector-Emitter Voltage VcEo 15 20 15 Vde 2N2368A, 2N3227 CASE 22-03, STYLE 4 | Ve 1 Collector-Emitter Voltage Voces 40 40 40 Vde TO: a'(TO-18) Collector-Base Voltage Voso 40 40 40 Vde Emitter-Base Voltage VEBO 45 6.0 45 Vdc Total Device Dissipation Pr @ Ta = 25C . 360 360 300 mw Derate above 25C 2.06 a 71 | mwre 1.2 1.2 15 Watts @ Tc = 25C 6.85 6.85 856 | wc Derate above 25C 2N6449 CASE 26-03 Operating Junction and Storage Ty Tatg -65 to 200 C TO-206AB (TO-46) Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol | main Max | Unit OFF CHARACTERISTICS Coltector-Emitter Breakdown Voltage(") ViBRYCEO ae (Ic = 10 mAdc, ig = 0) 2N2I69A, 2N4449 15 _ 2N3227 20 a Collactor-Emitter Breakdown Voltage ViBRICES 40 _ Vde (Ig = 10 pAde, Ig = 0) Collector-Aasa Breakdown Voitage VIBR)CBO 40 _ Vde (ig = 10 pAde, Ie = 0) Emitter-Base Breakdown Voltage V(BR)EBO vae (ig = 10 pAde, i = 0) 2N2369A, 2N4449 45 _ 2N3227 60 - Collector Cutoff Currant icBo wAdc (Vop = 20 Vdc, IE = 0) = 02 (Vop = 20 Vde. Ig = 0, Ta = 150C) ~ (1) Pulsed. Pulse Width 250 to 350 ps, Duty Cycle + 0 fo 2.0% (connnued) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779ZNZIVIMUATT, LITDEEE VALE, COUPE IUMTY Vsoneo ( ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise nated.) Characteristic [ symbor | te | Max |__Unit | OFF CHARACTERISTICS (continued) Collector Cutoff Current ICEX wade (VcE = 10 Vde, Vee = 0.25 Vdc) _ 03 (VCE = 10 Vdc. VBE = 0:25 Vee, Ta = 125C) _ a Collector Cutott Current IcES a 0.4 pAdc VoeE = 20 Voc, tg = 0) Emitter Cutoff Current EBO 2 0.25 pAde (VgeE = 4.0 Vac, Ic = 0} ON CHARACTERISTICS DC Current Gan(1) hFE a (ig = 10 mAde, Veg = 0.35 Vde) 2N2369A, 2N4449 40 120 2N3227 70 250 (Ig = 30 mAdc, Voce = 0.4 Vde) 2N2369A, 2N4449 30 120 2N3227 40 200 (ig = 10 MAdc, VcE = 1.0 Vde) 2N2369A, 2N4449 40 120 2N3227 100 300 {Ig = 100 mAdc, Voce = 1.0 Vde) 2N2369A, 2N4449 20 120 2N3227 30 150 {ig = 10 mAdc, Vee = 1.0 Vde. TA = -55C) 2N2369A, 2N4449 20 - 2N3227 40 _ Collector-Emitter Saturation Voltage VCE(sat) Vde {le = 10 mAde, Ig = 1.0 mAdc) _ 0.2 (Ig = 30 mAde, fB = 3.0 mAdc) os 0.25 (Ig = 100 mAdc. 1B = 10 mAdc) od 0.45 (ig = 10 mAde, Ig = 1.0 mAde, Ta = 125C) - oa Base-Emitter Saturation Voltage VBE(sat) Vde lig = 10 mAdc. Ip = 1.0 mAdc) 07 0.85 (ic = 30 mAdc, Ip = 3.0 maAdc) = 09 {Ic = 190 made, Ig = 10 mAde) 08 12 {ig = 10 mAde. Ig = 1.0 mAdc, TA = 125-C) 2N2369A, 2N4449 0.59 = {ig = 10 mAde, Ip = 1.0 MAde, Ta = -55C) 2N3227 oe ae SMALL-SIGNAL CHARACTERISTICS Collector-Base Capacitance Copa a 4.0 oF (Vog + 5.0 Vde. te = 0.4 1 tot 0 MHz} Input Capacitance Cibo (VpE - 0.5 Vde, Ic = 0.1 -07 1010 MHz) -2N2369A, 2N4449 ~ 5.0 2N3227 -- 40 ee __|____--_4 Small-Signal Current Transter Ratio, Magnitude ihe! 5.0 10 lic = 10 mAde, Voce 10 Vdc. 1 = 100 MHz) SWITCHING CHARACTERISTICS Storage Time Turn On Time Turn Off Time Thy Puleed Pulse Width 250 to tha jos Duty Cyule 10 la 0% (See Figures 12 and 13) . / eae = 2N2369A, 2N4449 ts 2N3227 AN2369A, 2N4449 2N3227 18 12 18 25 CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 117792N2369AJAN, 2N3227JAN, 2N4449JAN SERIES ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 13C, Vcg = 12 Vde Py = 360 mW 2N2369A, 2N3227, 900 mW 2N4448 initial and End Point Limits Characteristics Tested Symbol fin Mex Unit Collector Cutott Current Ices - 0.4 pAde (VCE = 20 Vdc) OC Current Gain(*) NFE - (Ig = 10 pAde, VcE = 1.0 Vde) Ea Uae 100 ao Delta trom Pre-Surn-in Measured Values Min Max Delta Collector Cutof Current AICES a +100 % ot Initial Value or 25 oe whichever is greater Deita DC Current Gain(') AhFE - +15 % ot Initial Value {1) Pulsed. Pulse Width 250 to 350 ps, Duty Cycie 1.0 10 2.0% CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 be PR 8 RRR TM SDP LEE NH Bit ER REIN