TOSHIBA TPS811,TPS813 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR TPS811, TPS813 PHOTOELECTRIC SWITCHES Unit in mm COPIERS, PRINTERS, AND FACSIMILES pe lt 0 (|): REFERENCE VALUE COMMODITY AND TICKET BENDING MACHINES Eh AND TERMINAL EQUIPMENT IN FINANCIAL ooh, COMPUTER SYSTEMS oneere HANDY TERMINALS The TPS811 and TPS813 represent a Si photo IC of digital output type that integrates a photodiode, amplifier circuit, and Schmitt trigger circuit into a single chip. These devices respond faster than the phototransistor type. They output a high when light is input. 4.020.1 @e Compact side-view epoxy resin package e High speed response : tpLH =2.5zs, tpHL=5.5us (TYP.) High sensitivity : 0.3mW/em?(MAX.) JEDEC @e Can be directly connected to TTL and CMOS. EIAJ @ Operates over a wide supply voltage range TOSHIBA 0-3H1 > Voc=4.5~17V Weight : 0.12g (TYP.) @ Digital output TPS811 .... Open collector TPS813 .... With a pull-up resistor MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING UNIT Supply Voltage Vcc 17 Vv TPS811 30 Output Voltage Vo Vv TPS813 =Vec Output Current Io 50 mA Output Current Derating (Ta>25C) | AIg/C 0.67 |mA/C Power Dissipation Po 250 mW Power Dissipation Derating 9 WwW /C (Ta > 25C) APg/C 3.33 |m Operating Temperature Range Topr 30~85 C Storage Temperature Range Tstg 40~100 C Soldering Temperature (5s) (Note 1) Tso] 260 C Note 1: At the location of 1.3mm from the resin package bottom 96100 1EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-09-08 1/5 TOSHIBA TPS811,TPS813 PIN CONNECTION TPS811 VOL. REG. o3. Vcc 02. OUT O1. GND TPS813 OPTO-ELECTRICAL CHARACTERISTICS (Ta = - 30~85C, Vcc =4.5~17V, Typical values are all at 25C.) CHARACTERISTIC SYMBOL | TEST CONDITION MIN. | TYP. |MAX.| UNIT Supply Voltage Vcc A.5 17 Vv High Level Supply Current IccH E=2mW/cm? (Note 2) 12] 3.2 mA TPS811 2. 2 Low Level 58 loci E=0 5| 5 mA Supply Current TPS813 4| 7.5 High Level E=2mW / em? (Note 2) I 15 A Output Current TPS811) 10H Vo=s0Vv B High Level Output Voltage|TPS813/ Vou E=2mW/cm? (Note 2) |0.9Vcc| Vv Low Level Output Voltage VOL Io, =16mA, E=0 _ 0.07 | 0.4 Vv 9_, ood . T =? _ wl * L H Threshold Radiant ELH a=25C 0 0.3 mW /em Incidence _ _ 0.6 Relative Output Voltage Equ/ELH| Ta=25C 0.5 0.65 | 0.9 Peak Sensitivity Wavelength Ap 900} nm Propagation | L->H | tpLH Ta = 25C = 2.5 9 Switching |Delay Time | HL | tpHi Vec=5V 5.5 15 5 Time Rise Time ty E=2mW/cm? oo} o5 | Fall Time te RL =2800 (Note 3)/ _ | gon | os Note 2 : CIE standard light source A (standard tungsten bulb) with color temperature =2856K 96100 1EAA2" @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-09-08 2/5 TOSHIBA Note 3 : Switching time measurement circuit and waveform TPS811,TPS813 TPS811 3 I | VOL.REG. }o OVC Ip F __ pLH tpHL, _ v 90% OH VouUT 10% L.5V (INFRARED LED) (TPS811) "VO ty te TPS813 Ip VOL.REG. Ip __ tpLH tpHL E + Vv 4 N 90% OH Vv 1.5V (INFRARED LED) (TPS813) OUT 10% ty te RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. | MAX. | UNIT Supply Voltage Voc 4.5 17 Vv Output Voltage Vo 4.5 17 Vv Low Level Output Current Iou 16 mA Operating Temperature Topr 0 70 C PRECAUTIONS 1. When you consider a combined use with an LED, be wavelength of less than 700nm cannot be detected. sure to use an infrared LED. Visible rays in Make sure the shielding plate that is used to detect positions is manufactured from materials with superior light-shielding characteristics. Insufficient shield can cause malfunction. Photo ICs contain a high-sensitivity amplifier. Toshiba recommends connecting a capacitor of about 0.014F that has good high-frequency characteristics between VCC and GND near the device to prevent unwanted oscillation. 1997-09-08 3/5 TOSHIBA TPS811,TPS813 Po Ta ALLOWABLE POWER DISSIPATION Po (mW) 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) VOL - IOL (TYP.) Voc=5Vv Ta=25C LOW LEVEL OUTPUT VOLTAGE Voy (V) 3 5 10 30 =O 100 LOW LEVEL OUTPUT CURRENT Ioy, (mA) ALLOWABLE OUTPUT CURRENT IoL (mA) LOW LEVEL OUTPUT VOLTAGE Voy (V) RELATIVE THRESHOLD RADIANT INCIDENCE Io Ta 0 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) VOL Ta (TYP.) 0.5 0.2 0.1 0.05 0.02 0.01 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) RELATIVE EH, EXL - VCC (TYP.) Ta=25C 4 8 12 16 20 SUPPLY VOLTAGE Vcc () 1997-09-08 4/5 TOSHIBA RELATIVE THRESHOLD RADIANT INCIDENCE RISE AND FALL TIME ty, tg (us) RELATIVE Evy, En, Ta 1.8 1.6 1. 1.2 1.0 0.8 0.6 0. 0.2 40 -20 0 20 40 60 80 100 Vec=5v AMBIENT TEMPERATURE Ta (C) tr, tf Ry (TYP.) Vec= Tee 25C E=2mW/cem? 0.2 05 1 2 5 10 20 50 LOAD RESISTANCE Ry, (kQ) DIRECTIONAL SENSITIVITY CHARACTERISTIC (TYP.) (Ta= 25C) 0 ; 10 O08 O06 O04 0.2 0 RELATIVE SENSITIVITY PROPAGATION DELAY TIME tpHL tpLH Ws) RELATIVE SENSITIVITY TPS811,TPS813 tPLH; tPHL E/ELH (TYP.) Ta=25C Vcoc=5v RL = 2800, 2 5 10 20 50 100 THRESHOLD RADIANT INCIDENCE RATIO E/ELH SPECTRAL RESPONSE (TYP.) Ta=25C 200 400 600 800 1000 1200 WAVELENGTH A (mm) 1997-09-08 5/5