2SA1213
PNP Silicon
Epitaxial Transistors
Features
• Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A)
• Small flat package
• PC=1.0 to 2.0W(mounted on ceramic substrate)
• Marking :NO , NY.
• High Speed Switching Time : tst
g
=1.0µs(typ.)
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage -50 V
VCBO Collector-Base Voltage -50 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current -2.0 A
IB Base Current -0.4 A
PC Collector power dissipation 0.5
1.0* W
TJ Junction Temperature 150 ℃
TSTG Storage Temperature -55 to +150 ℃
* Mounted on ceramic substrate (250mm2 x 0.8t)
Electrical Characteristics @ 25℃ Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
-50 --- --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=50Vdc,IE=0)
--- --- -0.1 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
--- --- -0.1 uAdc
ON CHARACTERISTIC
hFE(1) DC Current Gain
(IC=0.5Adc, VCE=2.0Vdc)
70 --- 240 ---
hFE(2) DC Current Gain *
(IC=2.0Adc, VCE=2.0Vdc)
20 --- --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=1.0Adc, IB=0.05Adc)
--- --- -0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=1.0Adc,IB=0.05Adc)
--- --- -1.2 Vdc
fT Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
100 120 --- MHz
Cob Collector output capacitance
(VCB=10Vdc, f=1.0MHz)
--- 40 --- pF
*hFE(1) classification O:70-140, Y:120-240
www.mccsemi.com
Revision: 1 2003/11/13
J
omponents
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SOT-89
B
A
E
D
GH
F
K
J
C
1 2 3
1. Emitter
2. Collector
3. Base
www.mccsemi.com
Revision: 1 2003/11/13
MCC
www.mccsemi.com
Revision: 1 2003/11/13
MCC