IRFF330 - Intersil Corporation - Datasheet.Directory

File Number 1893.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRFF330

3.5A, 400V, 1.000 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17414.

Features

• 3.5A, 400V

•r

DS(ON) = 1.000Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-205AF

Ordering Information

PART NUMBER PACKAGE BRAND

IRFF330 TO-205AF IRFF330

NOTE: When ordering, include the entire part number.

SOURCE

GATE

DRAIN

(CASE)

Data Sheet March 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRFF330 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 400 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 400 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID3.5 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 14 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD25 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 300 mJ

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ= 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 400 - - V

Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V

Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX,V

GS = 10V (Figure 7) 3.5 - - A

Gate to Source Leakage Forward IGSS VGS = ±20V - - ±100 nA

DraintoSourceOnResistance(Note2) rDS(ON) VGS = 10V, ID = 2.0A (Figures 8, 9) - 0.8 1.000 Ω

Forward Transconductance (Note 2) gfs VDS = 10V, ID = 3.3A (Figure 12) 2.9 3.5 - S

Turn-On Delay Time td(ON) ID≈ 3.5A, RG = 9.1Ω, VGS = 10V, RL = 49Ω

VDD = 175V (Figures 17, 18) MOSFET Switching

Times are Essentially Independent of Operating

Temperature

- - 30 ns

Rise Time tr- - 35 ns

Turn-Off Delay Time td(OFF) - - 55 ns

Fall Time tf- - 35 ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 3.5A, IG(REF) = 1.5mA,

VDS = 0.8V x Rated BVDSS (Figures 14, 19, 20)

Gate Charge is Essentially Independent of

Operating Temperature

-1830nC

Gate to Source Charge Qgs -11 - nC

Gate to Drain “Miller” Charge Qgd - 7.0 - nC

Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 700 - pF

Output Capacitance COSS - 150 - pF

Reverse Transfer Capacitance CRSS -40 - pF

Internal Drain Inductance LDMeasuredfromtheDrain

Lead, 5mm (0.2in) from

header to Center of Die

Modified MOSFET

Symbol Showing the

Internal Device

Inductances

- 5.0 - nH

Internal Source Inductance LSMeasured from the

Source Lead, 5mm

(0.2in) from Header to

Source Bonding Pad

-15 - nH

Junction to Case RθJC - - 5.0 oC/W

Junction to Ambient RθJA Free Air Operation - - 175 oC/W

IRFF330

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Rectifier.

- - 3.5 A

Pulse Source to Drain Current (Note 3) ISDM - - 14 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 3.5A, VGS = 0V (Figure 13) - - 1.6 V

Reverse Recovery Time trr TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs - 600 - ns

Reverse Recovered Charge QRR TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs - 4.0 - µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, start TJ = 25oC, L = 42.85mH, RG = 25Ω, peak IAS = 3.5A (Figures 14,15).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

TC, CASE TEMPERATURE (oC)

50 75 10025 150

ID, DRAIN CURRENT (A)

125

ZθJC, NORMALIZED

1.0

0.1

0.01 10-2

10-5 10-4 10-3 0.1 1 10

T1, RECTANGULAR PULSE DURATION (LC)

NOTES:

DUTY FACTOR: D = t1/t2

PDM

t1t2

SINGLE PULSE TJ= PDM x ZθJC(t) x RθJC + TC

THERMAL IMPEDANCE

0.01

0.5

0.2

0.05

0.02

0.1

IRFF330

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

103

110

102

0.1

ID, DRAIN CURRENT (A)

1.0

0.01

TC = 25oC

TJ = MAX RATED

SINGLE PULSE

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

10µs

100µs

1ms

100ms

10ms

VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

500 100

ID, DRAIN CURRENT (A)

150 200 250 300

80µs PULSE TEST

VGS = 5.5V

VGS = 4.5V

VGS = 5V

VGS = 4V

VGS = 10V

VDS, DRAIN TO SOURCE VOLTAGE (V)

2468010

ID, DRAIN CURRENT (A)

80µs PULSE TEST

1VGS = 4V

VGS = 5V

VGS = 4.5V

VGS = 10V VGS = 6V VDS > ID(ON) x rDS(ON)MAX

80µs PULSE TEST

TJ = 125oC

ID(ON), DRAIN TO SOURCE CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0024615

TJ = -55oC

TJ = 25oC

ID, DRAIN CURRENT (A)

20 30010

rDS(ON), DRAIN TO SOURCE

VGS = 10V

VGS = 20V

15 255

ON RESISTANCE (Ω)

2µs PULSE TEST 2.2

1.4

0.6

0 160

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED ON RESISTANCE

1.8

1.0

0.2 -40 40 80 120

VGS = 10V

ID = 2A

IRFF330

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

1.25

1.05

0.85

0 160

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

1.15

0.95

0.75-40 40 80 120

BREAKDOWN VOLTAGE

ID = 250µA

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

2000

1600

1200

800

400

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGS

CISS

COSS

CRSS

0203010 40 50

ID, DRAIN CURRENT (A)

481002

gfs, TRANSCONDUCTANCE (S)

80µs PULSE TEST

TJ = -55oC

TJ = 125oC

TJ = 25oC

TJ = 150oC

TJ = 25oC

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

100

101234

TJ = 25oC

TJ = 150oC

Qg(TOT), TOTAL GATE CHARGE (nC)

81624320

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 3.5A

VDS = 80V

VDS = 200V

VDS = 320V

IRFF330

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VGS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

IG(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)

IRFF330

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

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IRFF330