PRODUCT
SELECTION
GUIDE DISPLAYS, MEMORY
AND STORAGE
1H 2017
CONTACTS DISPLAYS STORAGE MCP FLASH - SSD DRAM
www.samsung.com/us/samsungsemiconductor
MOBILE/WIRELESS
NOTEBOOK PCs/
ULTRABOOKS™
DESKTOP PCs/
WORKSTATIONS
NETWORKING/
COMMUNICATIONS
CONSUMER
ELECTRONICS
Markets
SERVERS
Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its
DRAM, flash, mobile and graphics memory are found in many computers — from ultrabooks to powerful servers — and
in a wide range of handheld devices such as smartphones and tablets. Samsung is also a leader in display panels for
smartphones, TVs and monitors and public information displays. In addition, Samsung provides the industry’s widest line
of storage products from the consumer to enterprise levels. These include flash storage, such as Solid State Drives, and
a range of embedded flash storage products.
Samsung Semiconductor, Inc.
DRAM FLASH ASIC LOGICSSD LCD/OLED
DRAM
TABLE OF CONTENTS
//
DRAM PAGES 4–13
samsung.com/dram
• DDR4 SDRAM
• DDR3 SDRAM
• DDR2 SDRAM
• Graphics DRAM
• Mobile DRAM
• Ordering Info
ASH - SSD PAGES 14–15
samsung.com/flash
• eMMC
• Universal Flash Storage (UFS)
• Solid State Drives (SSD)
MULTI-CHIP PACKAGES PAGES 16
samsung.com/mcp
• eMMC + LPDDR2 • eMMC + LPDDR3
STorAGE PAGES 17–19
samsung.com/flash-ssd
• Solid State Drives (SSD)
DISPLAyS PAGES 20-21
samsungdisplay.com
• Public Information Display (PID)
Product Classification
• SNB/UNB
• Indoor PID
• E-Board
• Outdoor PID
CONTACTS PAGES 22–23
samsung.com/semiconductor/sales-network
• Sales Representatives and Distributors
DRAM
samsung.com/dram
41H 2017DDR4 SDRAM samsung.com/dram
DDR4 SDRAM REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.2V 1G x 72 M393A5143DB0-CPB 4Gb (512M x8) * 9 Lead Free & Halogen Free, Flip Chip 2133 1 Now
M393A5143DB0-CRC 2400
8GB 1.2V 1G x 72
M393A1G40DB0-CPB 4Gb (1G x4) * 18
Lead Free & Halogen Free, Flip Chip
2133 1
Now
M393A1G40DB1-CRC 2400
M393A1G43DB0-CPB 4Gb (512M x8) * 18 2133 2
M393A1G43DB1-CRC 2400
M393A1G40EB1-CPB 4Gb (1G x4) * 18 2133 1
M393A1G40EB1-CRC 2400
M393A1G43EB1-CPB 4Gb (512M x8) * 18 2133 2
M393A1G43EB1-CRC 2400
16GB 1.2V 2G x 72
M393A2G40DB0-CPB
4Gb (1G x4) * 36
Lead Free & Halogen Free, Flip Chip
2133
2
Now
M393A2G40DB1-CRC 2400
M393A2G40EB1-CPB 2133
M393A2G40EB1-CRC 2400
M393A2K40BB0-CPB 8Gb (2G x4) * 18 2133 1
M393A2K40BB1-CRC 2400
M393A2K43BB1-CPB/CRC 8Gb (1G x8) * 18 2133/2400 2
32GB 1.2V 4G x 72 M393A4K40BB0-CPB 8Gb (2G x4) * 36 Lead Free & Halogen Free, Flip Chip 2133 2 Now
M393A4K40BB1-CRC 2400
64GB TSV 1.2V 8G x 72
M393A8G40D40-CRB 4Gb 4H TSV (4G x4) * 36 Lead Free & Halogen Free, 4High TSV 2133 8
NowM393A8K40B21-CRB 8Gb 2H TSV (4G x4) * 36 Lead Free & Halogen Free, 2High TSV 2133 4
M393A8K40B21-CTC 2400
128GB
TSV 1.2V 16G x 72 M393AAK40B41-CTC 8Gb 4H TSV (8G x4) * 36 Lead Free & Halogen Free, 4High TSV 2400 8 Now
Notes: DDR4 4Gb (D die) based 0 = IDT 2 = Montage 3 = Inphi PB = DDR4-2133(15-15-15)
0 = IDT 4 = Montage RC = DDR4-2400(17-17-17)
DDR4 4Gb (E die) based 0 = IDT 4 = Montage 3 = Inphi PB = DDR4-2133(15-15-15)
0 = IDT 4 = Montage 3 = Inphi RC = DDR4-2400(17-17-17)
DDR4 (B Die) 8Gb based 0 = IDT 4 = Montage PB = DDR4-2133(15-15-15)
0 = IDT 4 = Montage 3 = Inphi RC = DDR4-2400(17-17-17)
DDR4 SDRAM COMPONENTS
Density Voltage Organization Part Number # Pins-Package Compliance Speed (Mbps) Dimensions Production
4Gb 1.2V
1G x 4 K4A4G045WD-BCRC/PB 78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip 2400/2133
7.5x11mm
Now
512M x 8 K4A4G085WD-BCRC/PB
256M x 16 K4A4G165WD-BCRC/PB 96 Ball -FBGA 7.5x13.3mm
1G x 4 K4A4G045WE-BCRC/PB 78 Ball -FBGA 7.5x11mm
512M x 8 K4A4G085WE-BCRC/PB
256M x 16 K4A4G165WE-BCRC/PB 96 Ball -FBGA 7.5x13.3mm
8Gb 1.2V 1G x 8 K4A8G085WB-BCRC/PB 78 Ball FBGA Lead Free & Halogen Free, Flip Chip 2400/2133 7.5x11mm Now
512M x16 K4A8G165WB-BCRC/PB 96 Ball -FBGA 7.5x13.3mm
16Gb
(8Gb DDP) 1.2V 2Gx8 K4AAG085WB-MCPB/RC 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 2133/2400 7.5x13.3mm Now
K4AAG165WB-MCPB/RC
DDR4 SDRAM Load Reduced REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
32GB 1.2V 4G x 72
M386A4G40DM0-CPB 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free, DDP 2133 4NowM386A4G40DM1-CRC 2400
M386A4K40BB0-CRC5 8G (2Gx4)*36 Lead Free & Halogen Free, Flip Chip 2
64GB 1.2V 8G x 72 M386A8K40BM1-CPB/CRC 8Gb DDP (4G x4) * 36 Lead Free & Halogen Free, DDP 2133/2400 4 Now
128GB 1.2V 16G x 72 M386AAK40B40-CUC 8Gb 4H TSV (8G x4) * 36 Lead Free & Halogen Free, DDP 2400 8 Now
Notes: DDR4 4Gb (D die) based 0 = IDT 2 = Montage PB = DDR4-2133(15-15-15)
5 = IDT 4 = Montage RC = DDR4-2400(17-17-17)
DDR4 (B Die) 8Gb based 0 = IDT 4 = Montage PB = DDR4-2133(15-15-15)
5 = IDT 4 = Montage RC = DDR4-2400(17-17-17)
samsung.com/dram 5
1H 2017
DRAM
DDR4 SDRAM
DDR4 SDRAM UNBUFFERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.2V 512M x 64
M378A5143DB0-CPB
4Gb (512M x8) *8
Lead Free & Halogen Free
2133
1 Now
M378A5143EB1-CPB 2133
M378A5143EB2-CRC 2400
M378A5244CB0-CPB 2133
M378A5244CB0-CRC 2400
8GB 1.2V
1G x 64
M378A1G43DB0-CPB 4Gb (512M x8) *16
Lead Free & Halogen Free
2133
2
Now
M378A1G43EB1-CRC 2400
M378A1K43BB1-CPB
8Gb (1G x8) *8
2133
M378A1K43BB2-CRC 2400
1R x 8 M378A1K43CB2-CPB 2133 1
M378A1K43CB2-CRC
16GB 1.2V 2G x 64
M378A2K43BB1-CPB
8Gb (1G x8) * 16 Lead Free & Halogen Free
2133
2 Now
M378A2K43BB1-CRC 2400
M378A2K43CB1-CPB 2133
M378A2K43CB1-CRC 2400
Notes: PB = DDR4-2133(15-15-15) RC = DD R4-2400(17-17-17)
DDR4 SDRAM ECC UNBUFFERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.2V 512M x72 M391A5143EB1-CPB/CRC M391A5143EB1-CPB/CRC Lead Free & Halogen Free, Flip Chip 2133/2400 1 Now
8GB 1.2V 1G x72 M391A1G43DB0-CPB/CRC M391A1G43DB0-CPB/CRC Lead Free & Halogen Free, Flip Chip 2133/2400 2 Now
M391A1K43BB1-CPB/CRC M391A1K43BB1-CPB/CRC
16GB 1.2V 2G x72 M391A2K43BB1-CPB/CRC M391A2K43BB1-CPB/CRC Lead Free & Halogen Free, Flip Chip 2133/2400 2 Now
Notes: PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17)
DDR4 SDRAM ECC SODIMM MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
8GB 1.2V 1G x 72
M474A1G43DB0-CPB
4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip
2133
2 NowM474A1G43DB1-CRC 2400
M474A1G43EB1-CPB/CRC 2133/2400
16GB 1.2V 2G x 72 M474A2K43BB1-CPB/RC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 Now
DDR4 SDRAM SODIMM MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.2V 512M x 64
M471A5143DB0-CPB 4Gb (512M x8) * 8 Lead Free & Halogen Free
2133 1 Now
M471A5143EB0-CPB/RC 2133/2400
M471A5244CB0-CPB/RC
8GB 1.2V 1G x 64
M471A1G43DB0-CPB 4Gb (512M x8) * 16
Lead Free & Halogen Free
2133 2
Now
M471A1G43EB1-CPB/CRC
2133/2400M471A1K43BB1-CPB/CRC 8Gb (1Gx8)*8 1
M471A1K43CB1-CPB/CRC
16GB 1.2V 2G x 64 M471A2K43BB1-CPB/RC 8Gb (1G x8) * 16 Lead Free & Halogen Free 2133/2400 2 Now
M471A2K43CB1-CPB/RC
Notes: PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17)
DDR4 SDRAM VLP REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
16GB 1.2V 2G x 72 M392A4K40BM0-CPB/RC 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 2133 2 Now
M392A2K43BB0-CPB/RC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400
32GB 1.2V 4G x 72 M392A4K40BM0-CPB/RC 8Gb DDP (4G x4) * 18 Lead Free & Halogen Free, DDP 2133/2400 2 Now
samsung.com/dram
61H 2017DDR3 SDRAM
DDR3 SDRAM UNBUFFERED MODULES (ECC)
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.5V 512Mx72 M391B5173EB0-CMA 4Gb (512M x8) * 9 Lead Free & Halogen Free 1866 1 Now
1.35V M391B5173EB0-YK0 1600
8GB 1.5V 1G x 72 M391B1G73EB0-CMA 4Gb (512M x8) * 18 Lead Free & Halogen Free 1866 2 Now
1.35V M391B1G73EB0-YK0 1600
Notes: YK0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13)
DDR3 SDRAM VLP REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed
(Mbps) Ranks Production
8GB
1.5V
1G x 72
M392B1G70DB0-CMA 4Gb (1Gx4) * 18
Lead Free & Halogen Free, Flip Chip
1866 1
Now
M392B1G73DB0-CMA 4Gb (512M x8) * 18 2
1.35V M392B1G70DB0-YK0 4Gb (1Gx4) * 18 1600 1
M392B1G73DB0-YK0 4Gb (512M x8) * 18 2
16GB 1.5V 2G x 72 M392B2G70DM0-CMA 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 1866 2 Now
1.35V M392B2G70DM0-YK0 1600
32GB 1.35V 4G x 72 M392B4G70DE0-YH9 4Gb QDP (4G x4) * 18 Lead Free & Halogen Free, QDP 1333 4 Now
Notes: 2 = IDT 3 = Inphi YK = DDR3-1600 MA = DDR3-1866 (13-13-13)
DDR3 Non ECC UNBUFFERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.5V 512M x 64
M378B5173DB0-CK0/CMA
4Gb (512M x8) * 8 Lead Free & Halogen Free. Flip Chip 1600/1866 1 NowM378B5173EB0-CK0/CMA
M378B5173EB0-YK0/*CMA
8GB 1.5V 1G x 64
M378B1G73DB0-CK0/MA
4Gb (512M x8) * 16 Lead Free & Halogen Free. Flip Chip 1600/1866 2 NowM378B1G73EB0-CK0/CMA
1.35V M378B1G73EB0-YK0/*CMA
Notes: YK = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) * 1.35V is compatible to 1.5V
DDR3 SDRAM REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed
(Mbps) Ranks Production
8GB
1.5V
1G x 72
M393B1G70EB0-CMA 4Gb (1G x4) * 18
Lead Free & Halogen Free, Flip Chip
1866 1
Now
M393B1G73EB0-CMA 4Gb (512M x8) * 18 2
1.35V M393B1G70EB0-YK0 4Gb (1G x4) * 18 1600 1
M393B1G73EB0-YK0 4Gb (2R x8) * 18 2
16GB
1.5V
2G x 72
M393B2G70DB0-CMA
4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip
1866
2 Now
M393B2G70EB0-CMA
1.35V M393B2G70DB0-YK0 1600
M393B2G70EB0-YK0
32GB 1.35V 4G x 72 M393B4G70DM0-YH9 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free. DDP 1333 4 Now
Notes: 8 = IDT A1 Evergreen
9 = Inphi UVGS02
2 = IDT (E-die)
3 = Inphi (E-die)
YK = DDR3-1600 (11-11-11)
MA = DDR3-1866 (13-13-13)
DDR3 SDRAM Load Reduced REGISTERED MODULES
Density Voltage Organization Part Number Composition Compliance Speed
(Mbps) Ranks Production
32GB 1.35V 4G x 72 M386B4G70DM0-YK0 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free, DDP 1600 4 Now
64GB 1.35V 8G x 72 M386B8G70DE0-YH9(4) 4Gb QDP (4G x4) * 36 Lead Free & Halogen Free, QDP 1333 8 Now
1.5V M386B8G70DE0-CK0(4) 1600
Notes: 3 = Inphi iMB GS02B 4 = Montage C1
samsung.com/dram 7
1H 2017
DRAM
DDR3 & DDR2 SDRAM
DDR3 SDRAM SODIMM MODULES
Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production
4GB 1.35V 512M x 72 M474B5173EB0-YK0 4Gb (512M x8) * 9 Lead Free & Halogen Free, Flip Chip 1866 1 Now
8GB 1.5V 1G x 72 M474B1G73EB0-CMA 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 1866 2 Now
1.35V M474B1G73EB0-YK000 1600
DDR3 SDRAM COMPONENTS
Density Voltage Organization Part Number # Pins- Package Compliance Speed (Mbps) Dimensions Production
1Gb
1.5V 128M x 8 K4B1G0846I-BCK0/MA/NB 78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133 7.5x11mm
Now
128M x 16 K4B1G1646I-BCK0/MA/NB 96 Ball -FBGA 7.5x13.3mm
1.35V 128M x 8 K4B1G0846I-BYK0/MA 78 Ball -FBGA 1600/1800 7.5x11mm
128M x 16 K4B1G1646I-BYK0/MA 96 Ball -FBGA 7.5x13.3mm
2Gb
1.5V 512M x 8 K4B2G0846F-BCK0/MA/NB 78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600/1866/2133 7.5x11mm
Now
256M x 16 K4B2G1646F-BCK0/MA/NB 96 Ball -FBGA 7.5x13.3mm
1.35V 256M x 8 K4B2G0846F-BK0/MA 78 Ball -FBGA 1600/1866 7.5x11mm
128M x 16 K4B2G1646F-BK0/MA 96 Ball -FBGA 7.5x13.3mm
4Gb
1.5V
512M x 8 K4B4G0846D-BCK0/MA/NB 78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip 1600/1866/2133
7.5x11mm
Now
256M x 16 K4B4G1646D-BCK0/MA/NB 96 Ball -FBGA 7.5x13.3mm
512M x 8 K4B4G0846E-BCK0/MA/NB 78 Ball -FBGA 7.5x11mm
256M x 16 K4B4G1646E-BCK0/MA/NB 96 Ball -FBGA 7.5x13.3mm
1.35V
1G x 4 K4B4G0446D-BYK0 78 Ball -FBGA
Lead Free & Halogen Free, Flip Chip
1600 7.5x11mm
Now
512M x 8 K4B4G0846D-BYK0 7.5x11mm
256M x 16 K4B4G1646D-BYK0/MA 96 Ball -FBGA
1600/1866
7.5x13.3mm
1G x 4 K4B4G0446E-BYK0/MA 78 Ball -FBGA 7.5x11mm
512M x 8 K4B4G0846E-BYK0/MA 7.5x11mm
256M x 16 K4B4G1646E-BYK0/MA 96 Ball -FBGA 7.5x13.3mm
8Gb
1.5V 512M x 16 K4B8G1646Q-MCK0/MA
96 Ball -FBGA Lead Free & Halogen Free 1600/1866 11x13.3mm Now
K4G8G1646D-MCK0/MA
1.35V 512M x 16 K4G8G1646D-MCK0/MA
K4G8G1646D-MYK0/ (MA)
Notes: H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) NB = DDR3-2133 (14-14-14)
DDR2 SDRAM COMPONENTS
Density Organization Part Number # Pins-Package Dimensions Package Speed (Mbps) Production
512Mb 64M x 8 K4T51083QN-BCE7 60-FBGA 7.5x9.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now
32M x 16 K4T51163QN-BCE7 84-FBGA 7.5x12.5mm
1Gb 128M x 8 K4T1G084QJ-BCE7 60-FBGA 7.5x9.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now
64M x 16 K4T1G164QJ-BCE7 84-FBGA 7.5x12.5mm
Notes: E6 = DDR2-667 (5-5-5) E7 = DDR2-800 (5-5-5) F7 = DDR2-800 (6-6-6) F8 = DDR2-1066 (7-7-7)
samsung.com/dram
81H 2017GRAPHICS & MOBILE DRAM
GRAPHICS DRAM COMPONENTS
Type Density Organization Part Number Package VDD/VDDQ Speed Bin (MHz) Production
GDDR5
8Gb 256M x 32 K4G80325FB-HC(03/28/25/22)
170-FCFBGA
1.5V/1.5V 6000/7000/8000*/9000*
Now
K4G80325FB-HC(03/28/25/22) 1.35V/1.35V 5000/6000/6500/TBD
4Gb 128M x 32 K4G41325FE-HC2(03/28/25/22) 1.5V/1.5V 6000/7000/8000*/9000*
K4G41325FE-HC2(03/28/25/22) 1.35V/1.35V 5000/6000/6500/TBD
gDDR3 4Gb 256M x 16 K4W4G1646E-BC(1A/1B) 96-FCFBGA 1.5V/1.5V 2133/2400 Now
K4W4G1646E-BC(1A/1B) 1.35V/1.35V 1866/2133
Notes: Package & Speed Bin Codes H: FBGA (Halogen Free & Lead Free) (DDR3)
B: FCFBGA (Halogen Free & Lead Free) (DDR3)
H: FCFBGA (Halogen Free & Lead Free) (GDDR5)
F: FBGA (Halogen Free & Lead Free) (GDDR5)
22: 0.22ns (9000Mbps)
25: 0.25ns (8000Mbps)
28: 0.28ns (7000Mbps)
03: 0.3ns (6000Mbps)
04: 0.4ns (5000Mbps)
1B: 8.3ns (2400Mbps gDDR3)
1A: 1.0ns (2133Mbps gDDR3)
11: 1.1ns (1866Mbps)
MOBILE DRAM COMPONENTS
Type Density Organization Part Number Package Power Production
LPDDR3
8Gb 1CH x 32 K4E8E324EB-EGCF 178-FBGA, 11x11.5, SDP, 1866Mbps
1.8V/1.2V/1.2V Now
K4E8E324EB-AGCF 168-FBGA, 12x12, SDP, 1866Mbps
12Gb 1CH x32 K4E2E304EA-AGCF 168-FBGA, 12x12, DDP, 1866Mbps
16Gb
1CH x 32 K4E6E304EB-EGCF 178-FBGA, 11x11.5, DDP, 1866Mbps
K4E6E304EB-AGCF 168-FBGA, 12x12, DDP, 1866Mbps
2CH x 32 K3QF2F20BM-AGCF 253-FBGA, 11x11.5, DDP, 1866Mbps
K3QF3F30BM-FGCF 256-FBGA, 14x14, DDP, 1866Mbps
24Gb 1CH x32 K4EHE304EA-AGCF 168-FBGA, 12x12, QDP, 1866Mbps
2CH x32 K3QF6F60AM-FGCF 256-FBGA, 14x14, QDP, 1866Mbps
32Gb
1CH x32 K4EBE304EB-EGCF 178-FBGA, 11x11.5, QDP, 1866Mbps
2CH x32 K3QF4F40BM-AGCF 253-FBGA, 11x11.5, QDP, 1866Mbps
K3QF4F40BM-FGCF 256-FBGA, 14x14, QDP, 1866Mbps
LPDDR4
8Gb
2CH x16
K4F8E304HB-MGCJ 200-FBGA, 10x15, SDP, 3733Mbps
1.8V/1.1V/1.1V
Now
16Gb K4F6E304HB-MGCJ 200-FBGA, 10x15, DDP, 3733Mbps
24Gb K4FHE3D4HM-MFCJ 200-FBGA, 10x15, DDP, 3733Mbps
K3RG4G40MM-MGCJ 366-FBGA, 15x15, DDP, 3733Mbps
32Gb 4CH x16 K3RG2G20CA-MGCJ 366-FBGA, 15x15, QDP, 3733Mbps CS
K3RG2G20CM-FGCJ 432-FBGA, 15x15, QDP, 3733Mbps ES
48Gb 4CH x16 K3RG6G60MM-MGCJ 366-FBGA, 15x15, QDP, 3733Mbps Now
LPDDR4X 32Gb 4CH x16 K3UH5H50MM-NGCJ 366-FBGA, 12x12.7 DDP, 3733Mbps 1.8V/1.1V/1.1V CS
48Gb K3UH6H60AM-NGCJ 366-FBGA, 12x12.7 QDP, 3733Mbps
samsung.com/dram 9
1H 2017
DRAM
DRAM Ordering Information
1. Memory (K)
2. DRAM: 4
3. DRAM Type
B: DDR3 SDRAM
D: GDDR SDRAM
G: GDDR5 SDRAM
H: DDR SDRAM
J: GDDR3 SDRAM
M: Mobile SDRAM
N: SDDR2 SDRAM
S: SDRAM
T: DDR SDRAM
U: GDDR4 SDRAM
V: Mobile DDR SDRAM Power Efficient Address
W: SDDR3 SDRAM
X: Mobile DDR SDRAM
Y: XDR DRAM
Z: Value Added DRAM
4. Density
10: 1G, 8K/32ms
16: 16M, 4K/64ms
26: 128M, 4K/32ms
28: 128M, 4K/64ms
32: 32M, 2K/32ms
50: 512M, 32K/16ms
51: 512M, 8K/64ms
52: 512M, 8K/32ms
54: 256M, 16K/16ms
55: 256M, 4K/32ms
56: 256M, 8K/64ms
62: 64M, 2K/16ms
64: 64M, 4K/64ms
68: 768M, 8K/64ms
1G: 1G, 8K/64ms
2G: 2G, 8K/64ms
4G: 4G, 8K/64ms
5. Bit Organization
02: x 2
04: x 4
06: x 4 Stack (Flexframe)
07: x 8 Stack (Flexframe)
08: x 8
15: x 16 (2CS)
16: x 16
26: x 4 Stack (JEDEC Standard)
27: x 8 Stack (JEDEC Standard)
30: x 32 (2CS, 2CKE)
31: x 32 (2CS)
32: x 32
6. # of Internal Banks
2: 2 Banks
3: 4 Banks
4: 8 Banks
5: 16 Banks
7. Interface ( VDD, VDDQ)
2: LVTTL, 3.3V, 3.3V
4: LVTTL, 2.5V, 2.5V
5: SSTL-2 1.8V, 1.8V
6: SSTL-15 1.5V, 1.5V
8: SSTL-2, 2.5V, 2.5V
A: SSTL, 2.5V, 1.8V
F: POD-15 (1.5V,1.5V)
H: SSTL_2 DLL, 3.3V, 2.5V
M: LVTTL, 1.8V, 1.5V
N: LVTTL, 1.5V, 1.5V
P: LVTTL, 1.8V, 1.8V
Q: SSTL-2 1.8V, 1.8V
R: SSTL-2, 2.8V, 2.8V
U: DRSL, 1.8V, 1.2V
8. Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
E: 6th Generation
F: 7th Generation
G: 8th Generation
H: 9th Generation
I: 10th Generation
J: 11th Generation
K: 12th Generation
M: 1st Generation
N: 14th Generation
Q: 17th Generation
9. Package Type
DDR2 DRAM
L: TSOP II (Lead-free & Halogen-free)
H: FBGA (Lead-free & Halogen-free)
F: FBGA for 64Mb DDR (Lead-free & Halogen-free)
6: sTSOP II (Lead-free & Halogen-free)
T: TSOP II
N: sTSOP II
G: FBGA
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
Z: FBGA (Lead-free)
DDR2 SDRAM
Z: FBGA (Lead-free)
J: FBGA DDP (Lead-free)
Q: FBGA QDP (Lead-free)
H: FBGA (Lead-free & Halogen-free)
M: FBGA DDP (Lead-free & Halogen-free)
E: FBGA QDP (Lead-free & Halogen-free)
T: FBGA DSP (Lead-free & Halogen-free, Thin)
DDR3 SDRAM
Z: FBGA (Lead-free)
H: FBGA (Halogen-free & Lead-free)
Graphics Memory
Q: TQFP
U: TQFP (Lead Free)
G: 84/144 FBGA
V: 144 FBGA (Lead Free)
Z: 84 FBGA (Lead Free)
T: TSOP
L: TSOP (Lead Free)
A: 136 FBGA
B: 136 FBGA (Lead Free)
H: FBGA (Hologen Free & Lead Free)
E: 100 FBGA (Hologen Free & Lead Free)
SDRAM
L TSOP II (Lead-free & Halogen-free)
N: STSOP II
T: TSOP II
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
COMPONENT DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11
K 4 T XX XX X X X X X XX
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Generation
Interface (VDD, VDDQ)
Number of Internal Banks
samsung.com/dram
10 1H 2017
COMPONENT DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11
K 4 T XX XX X X X X X XX
XDR DRAM
J: BOC(LF) P: BOC
Mobile DRAM
Leaded/Lead Free
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X/Z: 54balls BOC Mono
J/V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch
S/D: 90balls FBGA
Monolithic (11mm x 13mm)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
M/E: 90balls FBGA DDP
10. Temp & Power - COMMON
(Temp, Power)
C: Commercial, Normal (0’C – 95’C) & Normal
Power
C: (Mobile Only) Commercial (-25 ~ 70’C), Normal
Power
J: Commercial, Medium
L: Commercial, Low (0’C – 95’C) & Low Power
L: (Mobile Only) Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR & PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial, Normal (-40’C – 85’C) & Normal
Power
P: Industrial, Low (-40’C – 85’C) & Low Power
H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM
CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
B3: DDR333 (166MHz @ CL=2.5, tRCD=3,
tRP=3) *1
A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
B0: DDR266 (133MHz @ CL=2.5, tRCD=3,
tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
DDR2 SDRAM
CC: DDR2-400 (200MHz @ CL=3, tRCD=3,
tRP=3)
D5: DDR2-533 (266MHz @ CL=4, tRCD=4,
tRP=4)
E6: DDR2-667 (333MHz @ CL=5, tRCD=5,
tRP=5)
F7: DDR2-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
E7: DDR2-800 (400MHz @ CL=5, tRCD=5,
tRP=5)
DDR3 SDRAM
F7: DDR3-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,
tRP=7)
G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,
tRP=8)
H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,
tRP=9)
K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,
tRP=11)
MA: DDR3-1866 (933MHz @ CL=13, tRCD=13,
tRP=13)
NB: DDR3-2133 (1067MHz @ CL=14, tRCD=14,
tRP=14)
Graphics Memory
18: 1.8ns (550MHz)
04: 0.4ns (2500MHz)
20: 2.0ns (500MHz)
05: 0.5ns (2000MHz)
22: 2.2ns (450MHz)
5C: 0.56ns (1800MHz)
25: 2.5ns (400MHz)
06: 0.62ns (1600MHz)
2C: 2.66ns (375MHz)
6A: 0.66ns (1500MHz)
2A: 2.86ns (350MHz)
07: 0.71ns (1400MHz)
33: 3.3ns (300MHz)
7A: 0.77ns (1300MHz)
36: 3.6ns (275MHz)
08: 0.8ns (1200MHz)
40: 4.0ns (250MHz)
09: 0.9ns (1100MHz)
45: 4.5ns (222MHz)
1 : 1.0ns (1000MHz)
50/5A: 5.0ns (200MHz)
1 : 1.1ns (900MHz)
55: 5.5ns (183MHz)
12: 1.25ns (800MHz)
60: 6.0ns (166MHz)
14: 1.4ns (700MHz)
16: 1.6ns (600MHz)
SDRAM (Default CL=3)
50: 5.0ns (200MHz CL=3)
60: 6.0ns (166MHz CL=3)
67: 6.7ns
75: 7.5ns PC133 (133MHz CL=3)
XDR DRAM
A2: 2.4Gbps, 36ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
Note: All Lead-free and Halogen-free products are in
compliance with RoHS
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Generation
Interface (VDD, VDDQ)
Number of Internal Banks
DRAM Ordering Information
samsung.com/dram 11
1H 2017
DRAM
DRAM Ordering Information
MODULE DRAM ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11 12 13
M X XX T XX X X X X X X XX X
1. Memory Module: M
2. DIMM Type
3: DIMM
4: SODIMM
3. Data bits
12: x 72 184pin Low Profile Registered DIMM
63: x 63 PC100/PC133 μSODIMM with SPD
for 144pin
64: x 64 PC100/PC133 SODIMM with SPD
for 144pin (Intel/JEDEC)
66: x 64 Unbuffered DIMM with SPD for
144pin/168pin (Intel/JEDEC)
68: x 64 184pin Unbuffered DIMM
70: x 64 200pin Unbuffered SODIMM
71: x 64 204pin Unbuffered SODIMM
74: x 72/ECC Unbuffered DIMM with SPD
for 168pin (Intel/JEDEC)
77: x 72/ECC PLL + Register DIMM with SPD
for 168pin (Intel PC100)
78: x 64 240pin Unbuffered DIMM
81: x 72 184pin ECC unbuffered DIMM
83: x 72 184pin Registered DIMM
90: x 72/ECC PLL + Register DIMM
91: x 72 240pin ECC unbuffered DIMM
92: x 72 240pin VLP Registered DIMM
93: x 72 240pin Registered DIMM
95: x 72 240pin Fully Buffered DIMM with SPD
for 168pin (JEDEC PC133)
4. DRAM Component Type
B: DDR3 SDRAM (1.5V VDD)
L: DDR SDRAM (2.5V VDD)
S: SDRAM
T: DDR2 SDRAM (1.8V VDD)
5. Depth
09: 8M (for 128Mb/512Mb)
17: 16M (for 128Mb/512Mb)
16: 16M
28: 128M
29: 128M (for 128Mb/512Mb)
32: 32M
33: 32M (for 128Mb/512Mb)
51: 512M
52: 512M (for 512Mb/2Gb)
56: 256M
57: 256M (for 512Mb/2Gb)
59: 256M (for 128Mb/512Mb)
64: 64M
65: 64M (for 128Mb/512Mb)
1G: 1G
1K: 1G (for 2Gb)
6. # of Banks in Comp. & Interface
1: 4K/64mxRef., 4Banks & SSTL-2
2 : 8K/64ms Ref., 4Banks & SSTL-2
2: 4K/64ms Ref., 4Banks & LVTTL (SDR Only)
5: 8K/64ms Ref., 4Banks & LVTTL (SDR Only)
5: 4Banks & SSTL-1.8V
6: 8Banks & SSTL-1.8V
7. Bit Organization
0: x 4
3: x 8
4: x16
6: x 4 Stack (JEDEC Standard)
7: x 8 Stack (JEDEC Standard)
8: x 4 Stack
9: x 8 Stack
8. Generation
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
M: 1st Gen.
Q: 17th Gen.
9. Package
E: FBGA QDP (Lead-free & Halogen-free)
G: FBGA
H: FBGA (Lead-free & Halogen-free)
J: FBGA DDP (Lead-free)
M: FBGA DDP (Lead-free & Halogen-free)
N: sTSOP
Q: FBGA QDP (Lead-free)
T: TSOP II (400mil)
U: TSOP II (Lead-Free)
V: sTSOP II (Lead-Free)
Z: FBGA (Lead-free)
10. PCB Revision
0: Mother PCB
1: 1st Rev
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
A: Parity DIMM
S: Reduced PCB
U: Low Profile DIMM
11. Temp & Power
C: Commercial Temp. (0°C ~ 95°C) & Normal
Power
L: Commercial Temp. (0°C ~ 95°C) & Low Power
12. Speed
CC: (200MHz @ CL=3, tRCD=3, tRP=3)
D5: (266MHz @ CL=4, tRCD=4, tRP=4)
E6: (333MHz @ CL=5, tRCD=5, tRP=5)
F7: (400MHz @ CL=6, tRCD=6, tRP=6)
E7: (400MHz @ CL=5, tRCD=5, tRP=5)
F8: (533MHz @ CL=7, tRCD=7, tRP=7)
G8: (533MHz @ CL=8, tRCD=8, tRP=8)
H9: (667MHz @ CL=9, tRCD=9, tRP=9)
K0: (800MHz @ CL=10, tRCD=10, tRP=10)
7A: (133MHz CL=3/PC100 CL2)
13. AMB Vendor for FBDIMM
0, 5: Intel
1, 6, 8: IDT
9: Montage
Note: All Lead-free and Halogen-free products are in
compliance with RoHS
SAMSUNG Memory
DIMM
Data bits
DRAM Component Type
Depth
Number of Banks
Bit Organization
AMB Vendor
Speed
Temp & Power
PCB Revision
Package
Generation
samsung.com/dram
12 1H 2017DDR4 SDRAM Module Ordering Information
1. Memory Module: M
2. DIMM Type
3: R/LRDIMM
4: SODIMM
3. Data bits
74: x 72 260pin SODIMM
86: x 72 288pin Load Reduced DIMM
93: x 72 288pin Registered DIMM
4. DRAM Component Type
A: DDR4 SDRAM (1.2V VDD)
5. Depth
1G: 1G
2G: 2G
4G: 4G
8G: 8G
1K: 1G (for 8Gb)
2K: 2G (for 8Gb)
6. # of Banks in Comp. & Interface
4: 16Banks & POD-1.2V
7. Bit Organization
0: x 4
3: x 8
8. Component Revision
M: 1st Gen.
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
9. Package
B: FBGA (Halogen-free & Lead-free, Flip Chip)
M: FBGA (Halogen-free & Lead-free, DDP)
10. PCB Revision
0: None
1: 1st Rev.
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
11. Temp & Power
C: Commercial Temp. (0°C ~ 85°C) &
Normal Power
12. Speed
PB: DDR4-2133
(1066MHz @ CL=15, tRCD=15, tRP=15)
DDR4 SDRAM MODULE ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11 12
M X XX A XX X X X X X X XX
Memory Module
DIMM Type
Data bits
DRAM Component Type
Depth
# of Banks in Comp. & Interface
Bit Organization
Speed
Temp & Power
PCB Revision
Package
Component Revision
samsung.com/dram 13
1H 2017
DRAM
DDR4 SDRAM Module Ordering Information
1. Samsung Memory: K
2. DRAM: 4
3. DRAM Type
A: DDR4 SDRAM
4. Density
4G: 4Gb
8G: 8Gb
5. Bit Organization
04: x 4
08: x 8
6. # of Internal Banks
5: 16Banks
7. Interface (VDD, VDDQ)
W: POD (1.2V, 1.2V)
8. Revision
M: 1st Gen.
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
H: 9th Gen.
9. Package Type
B: FBGA (Halogen-free & Lead-free, Flip Chip)
M: FBGA (Halogen-free & Lead-free, DDP)
10. Temp & Power
C: Commercial Temp. (0°C ~ 85°C) &
Normal Power
11. Speed
PB: DDR4-2133
(1066MHz @ CL=15, tRCD=15, tRP=15)
RC: DDR4-2400
(1200MHz @ CL=17, tRCD=17, tRP=17)
DDR4 SDRAM MEMORY ORDERING INFORMATION
1 2 3 4 5 6 7 8 9 10 11
K 4 A XX XX X X X X X XX
Samsung Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Revision
Interface (Vdd, Vddq)
#of Internal Banks
samsung.com/flash
14 1H 2017Mainstream eMMC, High-Performance eMMC & UFS
MOBILE STORAGE
Application Product Density Org Type Flash Die Part Number Seq R/W
MB/s
Random
R/W
IOPS
mm Pkg Size (X,Y,Z) Status
High-End
UFS v2.1
(Gear 3 x
2 lanes)
256GB 256Gb*8
TLC
M-die KLUEG8U1EM-B0C10** 890/260 48K / 42K
11.5 x 13.0 x 1.0 CS128GB 128Gb*8 E-die KLUDG8V1EE-B0C10** 880/230 40K / 33K
64GB 128Gb*4 MLC D-die KLUCG4J1ED-B0C10** 880/200 48K / 35K
UFS v2.0
(Gear 3 x
2 lanes)
256GB 256Gb*8 TLC M-die KLUEG8U1EM-B0B10** 850/260 45K / 40K 11.5 x 13.0 x 1.2 MP
Mainstream
UFS 2.0
(Gear 3 x
1 lane)
128GB 128Gb*8
MLC
B-die
KLUDG8J1CB-B0B10**
460/160 20K / 14K
11.5 x 13.0 x 1.2
MP64GB 128Gb*4 KLUCG4J1CB-B0B10**
11.5 x 13.0 x 1.0
32GB 64Gb*4 E-die KLUBG4G1CE-B0B10**
eMMC v5.1
(Gear 3 x
1 lane)
256GB 256Gb*8
TLC M-die
KLMEG8UERM-C0410**
320/150 22K / 18K
CS
128GB 256Gb*4 KLMDG4UERM-B0410**
CS in
Dec / Jan
64GB 128Gb*4
MLC
D-die
KLMCG4JETD-B0410**
32GB 128Gb*2 KLMBG2JETD-B0410**
11.5 x 13.0 x 0.816GB 128Gb*1 KLMAG1JETD-B0410**
8GB 64Gb*1 F-die KLM8G1GETF-B0410**
MMC5.1 is backwards compatible with 5.0 & 4.5
*Denotes bucket code for latest firmware patch
MCPS
samsung.com/mcp 15
1H 2017 Multi-Chip Packages
eMCP: eMMC + LPDDR3
Memory eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package
eMMC & MDRAM
8GB 8Gb (x32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
16GB
8Gb (x32)
3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm8Gb*2 (x32)
6Gb*4 (x32)
32GB
8Gb*2 (x32)
3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
6Gb*4 (x32)
8Gb*4 (x32)
64GB
6Gb*4 (x32)
3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
8Gb*4 (x32)
128GB 8Gb*4 (x32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm
eMCP: eMMC + LPDDR4X
Memory eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package
eMMC & MDRAM
32GB 12Gb*2 (x32) 3.3V/1.8V - 1.8V/1.2V/0.6V 254FBGA 11.5 x 13mm
8Gb*4 (x32)
64GB
12Gb*2 (x32)
3.3V/1.8V - 1.8V/1.2V/0.6V 254FBGA 11.5 x 13mm8Gb*4 (x32)
12Gb*4 (x32)
128GB 12Gb*4 (x32) 3.3V/1.8V - 1.8V/1.2V/0.6V 254FBGA 12 x 15mm
ePoP: eMMC + LPDDR3
Memory eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package
eMMC & MDRAM
4GB 4Gb (x32) 3.3V/1.8V - 1.8V/1.2V 168FBGA 12x12mm
6Gb (x32)
4GB 4Gb (x32) 3.3V/1.8V - 1.8V/1.2V 136FBGA 10x10mm
6Gb (x32)
8GB 8Gb (x32) 3.3V/1.8V - 1.8V/1.2V 136FBGA 10x10mm
16 samsung.com/flash-ssd
1H 2017Solid State Drives
Solid State Drives (SSDs)
Server & Cloud Datacenter Enterprise
LEGACY SERVERS HIGH-DENSITY
SERVERS
ALL FLASH
PRIMARY STORAGE
Hard Disk Drive
Replacement
LOW LATENCY
PRIMARY STORAGE
Next-Generation
All Flash Array
EXTREME
PERFORMANCE
SERIES
Server-side Caching
PM863a PM963 PM1633a PM1725a PM1725a
Host Interface SATA 3.0 @ 6 Gbit/s PCIe Gen 3 x4 @
32Gbit/s (NVMe) SAS 3.0 @ 12 Gbit/s PCIe Gen 3 x4 @
32Gbit/s (NVMe)
PCIe Gen 3 x8 @
64Gbit/s (NVMe)
Form Factor 2.5" M.2 (22x110mm) 2.5" 2.5" / U.2 Add-in Card (HHHL)
Capacity (GB) 240/480/960/
1920/3840 960/1920 480/960/1920/
3840/7680/15360 3840/7680/15360 1600/3200/6400
Endurance (up to) 1.3 DWPD for 3 Years 1.3 DWPD for 3 Years 1-3 DWPD for 5 Years 5 DWPD for 5 Years 5 DWPD for 5 Years
Power Consumption (Active) 4 W 7.5 W 13 W 25 W 23 W
Power Consumption (Idle) 1.3 W 2.5 W 7 W 7 W 7.7 W
Random Reads (up to) 99,000 IOPS 430,000 IOPS 205,000 IOPS 740,000 IOPS 1,080,000 IOPS
Random Writes (up to) 18,000 IOPS 40,000 IOPS 39,000 IOPS 70,000 IOPS 170,000 IOPS
Sequential Reads (up to) 520 MB/s 2,000 MB/s 1,300 MB/s 3,100 MB/s 6,400 MB/s
Sequential Writes (up to) 480 MB/s 1,800 MB/s 1,400 MB/s 3,000 MB/s 3,000 MB/s
MTBF 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours
Uncorrectable Bit Error Rate
(UBER) 1 in 1017 1 in 1017 1 in 1017 1 in 1017 1 in 1017
Physical Dimensions 100 x 70 x 7mm 22 x 110 x 4.15 mm 100 x 70 x 15 mm 100 x 70 x 15 mm 168 x 70 x 19 mm
(HHHL)
Weight 55 g 20 g 160 g 160 g 330 g
17
STORAGE
samsung.com/flash-ssd 1H 2017 Solid State Drives
SOLID STATE DRIVES (SSD)
Drive Type Power-loss
Protection Form Factor Interface Connector Product
Family
Write
Endurance
Capacity
(GB) Part Number
Client PC/
Embedded No M.2 22 x 80 mm
SATA 3.0 @ 6 Gbit/s
M.2
PM871a
PC Workload
256 MZNLN256HMHQ-00000
512 MZNLN512HMJP-00000
1024 MZNLN1T0HMLH-00000
PCIe Gen 3 x4 @
32Gbit/s (NVMe) PM951
128 MZVLV128HCGR-00000
256 MZVLV256HCHP-00000
512 MZVLV512HCJH-00000
Datacenter Yes
2.5" 7mmT
SATA 3.0 @ 6 Gbit/s SFF-8223
PM863a 0.8 DWPD
for 5 Years
240 MZ7LM240HMHQ-00005
480 MZ7LM480HMHQ-00005
960 MZ7LM960HMJP-00005
1920 MZ7LM1T9HMJP-00005
3840 MZ7LM3T8HMLP-00005
SM863
3.6 DWPD
for 5 Years
120 MZ7KM120HAFD-00005
240 MZ7KM240HAGR-00005
480 MZ7KM480HAHP-00005
960 MZ7KM960HAHP-00005
1920 MZ7KM1T9HAJM-00005
10 DWPD
for 5 Years
100 MZ7KM120HAFD-00005
200 MZ7KM240HAGR-00005
400 MZ7KM480HAHP-00005
800 MZ7KM960HAHP-00005
1600 MZ7KM1T9HAJM-00005
PCIe Gen 3x4 @
32Gbit/s (NVMe)
U.2 (SFF-8639)
PM963 0.8 DWPD
for 5 Years
480 MZQLW480HMHQ-00003
960 MZQLW960HMJP-00003
1920 MZQLW1T9HMJP-00003
3840 MZQLW3T8HMLP-00003
SM963
3.6 DWPD
for 5 Years
960 MZQKW960HMJP-00003
1920 MZQKW1T9HMJP-00003
3840 MZQKW3T8HMLH-00003
10 DWPD
for 5 Years
800 MZQKW960HMJP-00003
1600 MZQKW1T9HMJP-00003
3200 MZQKW3T8HMLH-00003
M.2 22 x 110 mm M.2
PM963 0.8 DWPD
for 5 Years
480 MZ1LW480HMHQ-00003
960 MZ1LW960HMJP-00003
1920 MZ1LW1T9HMLS-00003
SM963
3.6 DWPD
for 5 Years
960 MZ1KW960HMJP-00003
1920 MZ1KW1T9HMJP-00003
10 DWPD
for 5 Years
800 MZ1KW960HMJP-00003
1600 MZ1KW1T9HMJP-00003
18 1H 2017 samsung.com/flash-ssd
Solid State Drives
SOLID STATE DRIVES (SSD) continued
Drive Type Power-loss
Protection Form Factor Interface Connector Product
Family
Write
Endurance
Capacity
(GB) Part Number
Enterprise Yes
2.5" 15mmT
SAS 3.0 @ 12 Gbit/s SFF-8680
PM1633
1 DWPD
for 5 Years
480 MZILS480HCGR-00003
960 MZILS960HCHP-00003
1920 MZILS1T9HCHP-00003
3840 MZILS3T8HCJM-00003
3 DWPD
for 5 Years
400 MZILS480HCGR-00003
800 MZILS960HCHP-00003
1600 MZILS1T9HCHP-00003
3200 MZILS3T8HCJM-00003
PM1633a 1 DWPD
for 5 Years
480 MZILS480HEGR-00007
960 MZILS960HEHP-00007
1920 MZILS1T9HEJH-00007
3840 MZILS3T8HMLH-00007
7680 MZILS7T6HMLS-00007
15360 MZILS15THMLS-00007
PCIe Gen 3x4 @
32Gbit/s (NVMe) U.2 (SFF-8639)
PM1725a 5 DWPD
for 5 Years
800 MZWLL800HEHP-00003
1600 MZWLL1T6HEHP-00003
3200 MZWLL3T2HMJP-00003
6400 MZWLL6T4HMLS-00003
Add-in Card (HHHL) PCIe Gen 3 x8 @
64Gbit/s (NVMe) Edge Connector
1600 MZPLL1T6HEHP-00003
3200 MZPLL3T2HMJP-00003
6400 MZPLL6T4HMLT-00003
DISPLAYS
samsungdisplay.com 19
1H 2017 DID Panel Lineup, Tablets & Monitors
samsung.com/flash-ssd
Public Information Display (PID) Product Classication
Why PID instead of TV?
COMMERCIAL (PID) CONSUMER (TV)
WARRANTY 18 months to 2 years 90 days to 1 year
RELIABILITY
Public environments
20+ hours daily duty cycle
Variety of temperatures & location
5-8 hour daily duty cycle
Designed for in-home use in controlled environment
In-home living room
PRODUCTION LIFECYCLE 24-36 months 12-15 months
PICTURE QUALITY
Designed to resist image retention
LCD backlight covers a wider color spectrum necessary for
PC source integration, giving better picture quality
AGAR coating for public viewing
120Hz / 240Hz for full-motion video
Designed for TV signals
Gloss surface treatment
LOCATION Most models portrait capable Can only be oriented in landscape mode
Product Segmentation
Type Class Warranty Bezel Suggested
Run Time Brightness Usage Applications Value Tier
ENB / UNB / SNB Ultra / Super Narrow Bezel 2 years 1.9mm - 5.9mm
A-to-A 20+ hours 500-700 nits Heavy Video Walls Premium commercial range
Indoor PID Indoor Commercial Panels 2 years Narrow 20+ hours 600/700 nits Medium Semi-Outdoor Mid-price range
E-Board Value, Large Format 18 months Normal 12 hours 450 nits Daily Indoor, e-Board High-value commercial range
Outdoor PID High Bright, Wide Temp 2 years Normal 20+ hours 2500-5000 nits Heavy Outdoor Premium commercial range
Specialty Value, Large Format 2 years Narrow 20+ hours 500/ 1500 nits Medium specialty
Super Narrow Bezel (SNB)/
Ultra Narrow Bezel (UNB) » UNB: 3.9mm A-to-A» SNB: 5.9mm A-to-A» Video Wall
» Narrow Bezel
Indoor PID » 700 nits Brightness» 40"/46"/55"/75"
» Landscape Orientation
E-Board PID » AGAR Surface Treatment» 55"/70"/82" Edge LED
» High Brightness
Outdoor PID » 110°C Clearing Point» Full High Definition
Product Segmentation
HEAVY USE
LIGHT USE
SNB / UNB Professional Indoor Events Billboard
• Control Room
• Simulation
• Scoreboard
• Sports Broadcasting
• Dynamic Signage
Indoor PID Entertainment Transportation Communication
• Casino
• Theatre
• Menu
• Airport
• Train/Bus Station
• Conference Room
E-Board PID Commercial Education Hospitality
• Kiosk
• Conference Systems
• Interactive FPD • Hotel Signage
Outdoor PID Commercial Education Hospitality
• Kiosk
• Conference Systems
• Interactive FPD • Hotel Signage
samsungdisplay.com
20 1H 2017DID Panel Lineup
SAMSUNG DIGITAL INFORMATION DISPLAY (DID) PANEL LINEUP
Category Model Size Model
Resolution Bezel Backlight Brightness
(typical)
Contrast
Ratio
Response
Time Frequency MP* Comment
SNB /
UNB /
ENB
LTI460HN09-0
46"
FHD
Super narrow
D-LED
500 nits
3,000:1 8ms 60Hz
Now
5.9mm Active to Active, LED
LTI460HN11-A
Ultra narrow
500 nits
3.9mm Active to Active, LED
LTI460HN12-V 700 nits
LTI460HN13-V Extreme
narrow
700 nits Feb.,
'17 2.0mm Active to Active, LED
LTI460HN14-V 500 nits Q2, '17
LTI550HN11-V
55" Ultra narrow
500 nits
Now 3.9mm Active to Active, LED
LTI550HN12-V 700 nits
Indoor PID
LTI550HN13-V
(Broadcast)
55"
FHD
Ultra narrow
D-LED
700 nits
3,000:1
8ms
60Hz
Now
3.9mm Active to Active, LED
LTI550HN14-V
55"
LTI550HN17-V 55"
LTI460HN08 46" eLED
700 nits
4,000:1
LTI480HN01-0
48" Slim eLED Slim eLED,Landscape / Portrait
LTI480HN02-0 500 nits
LTI550HN06
55"
eLED
700 nits eLED, Landscape / Portrait
LTI550HN07-0 450 nits E-Board; Landscape/Portrait
LTI550FN01-N UHD Slim eLED 500 nits Slim eLED, Landscape / Portrait
LTI750HF02-0
75"
FHD
Normal
D-LED
400 nits 3,500:1
120Hz Landscape / Portrait
LTI750FJ01-N
UHD
500 nits 5,000:1
LTI750FN01-V
eLED
600 nits
4,000:1 60Hz
16. Q2
eLED Landscape / Portrait
LTI980FN01-V 98" 500 nits Jan.,
'17
E-Board
LTI550HN15-0 55"
FHD
Narrow
eLED
380 nits
4,000:1 8ms 60Hz Now
Value PID
LTI700HA02-0 70"
Normal
350 nits E-Board; Landscape mode only
LTI750HF02-0
75"
D-LED 450 nits
LTI750FN02-N eLED 350 nits E-Board; Landscape mode only
Outdoor
LTI460HZ01-V
46"
FHD Narrow D-LED
5,000 nits 4,000:1
8ms
60Hz
Now High Bright, Hi Temp LC, 1/4λ Pol.
LTI460HF01-V
2,500 nits
3,000:1 120Hz
LTH550HF04-
V(A) 55"
LTI750HF01-V 75" 3,500 nits
Specialty
LTI290LN01-0
29"
Half FHD Narrow eLED
500 nits
4,000:1 16ms 60Hz
Now
Stretched, 40"/2, Hi Temp LC
LTI290LN02-0
700 nits
LTI370LN03-V
37" Stretched, 46"/2, Hi Temp LC
LTI370LN02-V 1500 nits Q1, '17
21
CONTACTS
samsung.com/semiconductor/sales-network 1H 2017 Contacts
Contacts
Feel free to contact your local distributor or sales representative with any Samsung sales inquiries.
For all product information please visit: www.samsung.com/us/samsungsemiconductor
Adelsa | www.adetronics.com.mx
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD MEXICO Hacienda Corralejo #80,
Bosque de Echegaray,
Naucalpan, Mexico 53310
52-555-560-5002
GUADALAJARA OFFICE 52-333-122-3054
MONTERREY OFFICE 52-818-214-0011
CD. JUAREZ OFFICE 52-656-613-3517
REYNOSA OFFICE 52-899-922-5540
ATMI Sales | www.atmisales.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD OREGON 4900 S.W. Griffith Drive, Suite 253
Beaverton, OR 97005
1-800-898-2446,
503-643-8307
503-643-4364
WASHINGTON 8581 154th Avenue NE
Redmond WA 98052
425-869-7636 425-869-9841
Bear VAI Technology | www.bearvai.com
PRODUCTS ADRRESS MAIN PHONE FAX
Memory, SLSI, LCD MAIN OFFICE -
BRECKSVILLE, OHIO
6910 Treeline Drive, Unit H
Brecksville, OH 44141
440-526-1991 440-526-5426
MAIN OFFICE -
INDIANA
11451 Overlook Drive
Fishers, IN 46037
440-832-7637 317-845-8650
MICHIGAN 5506 Alpine Ridge
Stevensville, MI 49127
440-526-1991 440-526-5426
Crestone Technology Group | www.crestonegroup.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD COLORADO 7108 S. Alton Way, Building L, Suite A
Centennial, CO 80112
303-280-7202 720-482-2220
UTAH 801-973-8909
Customer 1st | www.customer1st.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD MINNESOTA 2950 Metro Drive, Suite 101
Bloomington, MN 55425
952-851-7909 952-851-7907
KANSAS 2111 E. Crossroad Lane, #202
Olathe, KS 66062
samsung.com/semiconductor/sales-network
22 1H 2017Contacts
InTELaTECH | www.intelatech.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI 2113 St. Regis, Suite 240, Dollard Des Ormeaux, QC Canada H9B 2M9 905-629-0082 905-629-1795
5225 Orbitor Drive, Mississauga, Ont, Canada L4W 4Y8 905-629-0082 905-624-6909
I-Squared Incorporated | www.isquared.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD 2635 N. 1st Street, Suite 128, San Jose, CA 95134 408-988-3400 408-988-2079
1250 B Street, Petaluma, CA 94952 707-773-3108
IRI Rep | www.irirep.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD 320 W. Frontage Rd, Northfield , IL 60093 847-967-8430 847-967-5903
IRI WEST | www.iriwest.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD AUSTIN 810 Hesters Crossing Rd, Suite 200
Round Rock, TX 78681
512-343-1199 512-343-1922
DALLAS 2745 Dallas Pkwy, Suite 460
Plano, TX 75093
972-680-2800 972-699-0330
HOUSTON 24624 Interstate 45 North, Suite 200
Spring, TX 77386
832-940-9600 512-343-1922
Neptune Electronics (necco) | www.neccoelect.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD 11 Oval Drive, Suite 169, Islandia, NY 11749 631-234-2525 631-234-2707
New Tech Solutions
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD 26 Ray Avenue, Burlington, MA 01803 781-229-8888 781-229-1614
Rep One Associates, Inc. | www.repone.com
PRODUCTS ADDRESS MAIN PHONE FAX
Memory, SLSI, LCD ALABAMA 403 Madison St.
Huntsville, AL 3580
256-539-7371 256-533-4509
FLORIDA 704 516-0242
GEORGIA 3000 Langford Road, Building 300
Norcross, GA 30071
770-209-9242
678-591-6753
770-209-9245
NORTH & SOUTH
CAROLINA
912 Oleander Lane
Waxhaw, NC 28173
704 516-0242
Tech Coast Sales | www.tc-sales.com
PRODUCTS ADDRESS MAIN PHONE EMAIL
Memory, SLSI, LCD 23121 Verdugo Drive, Suite 101, Laguna Hills, CA 92653 949-305-6869 sales@tc-sales.com
23
samsung.com/semiconductor/sales-network 1H 2017 Notes
Notes
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible
errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specications
with the intent to improve function or design at any time and without notice and is not required to update this documentation to reect such changes. This publication does not convey to
a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specically disclaims any and all
liability, including without limitation any consequential or incidental damages.
Copyright 2016. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. Ultrabooks is a trademark of Intel Corporation. All other names and
brands may be claimed as the property of others. The appearance of all products, dates, gures, diagrams and tables are subject to change at any time, without notice.
BR-16-ALL-001 | Printed 1/17
Samsung Semiconductor, Inc.
3655 North First Street
San Jose, CA 95134-1713
samsung.com/us/oem-solutions
