CGHV14250F-TB - CREE - Datasheet.Directory

Subject to change without notice.

www.cree.com/rf

CGHV14250

250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed specically with high efciency, high gain and wide bandwidth capabilities, which

makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplier applications. The

transistor could be utilized for band specic applications ranging from 900 through 1800

MHz. The package options are ceramic/metal ange and pill package.

Rev 1.1 – December 2015

Features

• Reference design amplier 1.2 - 1.4 GHz Operation

• FET Tuning range UHF through 1800 MHz

• 330 W Typical Output Power

• 18 dB Power Gain

• 77% Typical Drain Efciency

• <0.3 dB Pulsed Amplitude Droop

• Internally pre-matched on input, unmatched output

Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplier

Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units

Output Power 365 365 350 310 330 W

Gain 18.6 18.6 18.4 17.9 18.2 dB

Drain Efciency 80 80 77 74 76 %

Note:

Measured in the CGHV14250-AMP amplier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 37 dBm.

Package Type: 440162, 440161

PN: CGHV14250F, CGHV14250P

2CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous)

Parameter Symbol Rating Units Conditions

Drain-Source Voltage VDSS 125 Volts 25˚C

Gate-to-Source Voltage VGS -10, +2 Volts 25˚C

Storage Temperature TSTG -65, +150 ˚C

Operating Junction Temperature TJ225 ˚C

Maximum Forward Gate Current IGMAX 42 mA 25˚C

Maximum Drain Current1IDMAX 18 A 25˚C

Soldering Temperature2TS245 ˚C

Screw Torque τ40 in-oz

CW Thermal Resistance, Junction to Case3RθJC 0.95 ˚C/W PDISS = 167 W, 65˚C

Pulsed Thermal Resistance, Junction to Case3RθJC 0.57 ˚C/W PDISS = 167 W, 500 µsec, 10%, 85˚C

Pulsed Thermal Resistance, Junction to Case4RθJC 0.63 ˚C/W PDISS = 167 W, 500 µsec, 10%, 85˚C

Case Operating Temperature5TC-40, +130 ˚C PDISS = 167 W, 500 µsec, 10%

Note:

1 Current limit for long term, reliable operation

2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library

3 Measured for the CGHV14250P

4 Measured for the CGHV14250F

5 See also, the Power Dissipation De-rating Curve on Page 5

Electrical Characteristics

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics1 (TC = 25˚C)

Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 41.8 mA

Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 50 V, ID = 500 mA

Saturated Drain Current2IDS 31.4 37.6 –AVDS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 41.8 mA

RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)

Output Power POUT 275 330 – W VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm

Drain Efciency DE63 77 – % VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm

Power Gain GP–18.2 –dB VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm

Pulsed Amplitude Droop D – -0.3 –dB VDD = 50 V, IDQ = 500 mA

Output Mismatch Stress VSWR – 5 : 1 – YNo damage at all phase angles,

VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm Pulsed

Dynamic Characteristics

Input Capacitance CGS – 150 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Output Capacitance CDS – 16 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance CGD –1.35 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz

Notes:

1 Measured on wafer prior to packaging.

2 Scaled from PCM data.

3 Measured in CGHV14250-AMP. Pulse Width = 500 μS, Duty Cycle = 10%.

3CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Typical Performance

Figure 1. - CGHV14250 Typical Sparameters

Tcase = 25°C VDD = 50 V, IDQ = 500 mA

Figure 2. - CGHV14250 Typical RF Results

VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm

Tcase = 25°C, Pulse Width = 500 µs, Duty Cycle = 10 %

Drain Efciency

GainGain

Magnitude (dB)

CGHV14250 Typical Sparameters

Vdd = 50 V, Idq = 500 mA

-40

-30

-20

1 1.1 1.2 1.3 1.4 1.5 1.6

Magnitude (dB)

Frequency (GHz)

S(2,1)

S(1,1)

S(2,2)

Output Power

Gain

250

300

350

400

450

Gain (dB) & Drain Efficiency (%)

Output Power (W)

CGHV14250 Typical RF Results

Vdd = 50 V, Idq = 500 mA, Pin = 37 dBm

Tcase = 25 deg C, Pulse Width = 500 us, Duty Cycle = 10 %

Output Power

Gain

100

150

200

1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50

Gain (dB) & Drain Efficiency (%)

Output Power (W)

Frequency (GHz)

Drain Efficiency

Drain Efciency

Output Power

Gain

4CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Typical Performance

Figure 3. - CGHV14250 Typical RF Results

VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm

Tcase = 85°C, Pulse Width = 500 µs, Duty Cycle = 10 %

Figure 4. - CGHV14250 CW RF Results

VDD = 50 V, IDQ = 500 mA, PIN = 37 dBm, Tcase = 65°C

200

250

300

350

Gain (dB) and Drain Efficiency (%)

Output Power (W)

CGHV14250F CW RF Results

Vdd = 50 V, Idq = 500 mA, Pin = 37 dBm, Tcase = 65 C

100

150

1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50

Gain (dB) and Drain Efficiency (%)

Output Power (W)

Frequency (GHz)

Pout

Gain

Drain Eff

Drain Efciency

Gain

Output Power

200

250

300

350

400

Gain (dB) & Drain Efficiency (%)

Output Power (W)

CGHV14250 Typical RF Results

Vdd = 50 V, Idq = 500 mA, Pin = 37 dBm

Tcase = 85 deg C, Pulse Width = 500 us, Duty Cycle = 10 %

Output Power

Gain

Drain Efficiency

100

150

1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50

Gain (dB) & Drain Efficiency (%)

Output Power (W)

Frequency (GHz)

Drain Efciency

Output Power

Gain

5CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Source and Load Impedances

Frequency (MHz) Z Source Z Load

900 0.6 - j0.3 5.3 + j0.1

1000 0.7 - j0.8 4.3 +j0.8

1100 1.3 - j1.1 3.3 + j0.8

1200 1.8 - j1.1 3.0 + j0.4

1300 2.5 - j0.7 2.5 + j0.4

1400 3.4 - j0.7 2.3 + j0.1

1500 1.8 - j0.9 2.3 + j0

Note 1. VDD = 50 V, IDQ = 500 mA in the 440162 package

Note 2. Optimized for power gain, PSAT and Drain Efciency

Note 3. When using this device at low frequency, series resistors should be used to maintain amplier

stability

CGHV14250F Power Dissipation De-rating Curve

Figure 4. - CGHV14250 Transient Power Dissipation De-Rating Curve

Note 1. Area exceeds Maximum Case Temperature (See Page 2).

Z Source Z Load

100

120

140

160

180

Power Dissipation (W)

CGHV14250 Transient Power Dissipation De

Rating Curve

0 25 50 75 100 125 150 175 200 225 250

Power Dissipation (W)

Maximum Case Temperature (°C)

Flange

500 us 10 %

Pill - 500 us 10 %

Flange -1 ms -20 %

Pill - 1 ms - 20 %

Pill - 500 µs 10%

Flange - CW

Note 1

6CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV14250-AMP Demonstration Amplier Circuit Bill of Materials

Designator Description Qty

R1 RES, 1/16W, 0603, 1%, 562 OHMS 1

R2 RES, 5.1 OHM, +/-1%, 1/16W, 0603 1

R3 RES, 1/16W, 0603, 1%, 4700 OHMS 1

L1 INDUCTOR, CHIP, 6.8 nH, 0603 SMT 1

C1, C23 CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F 2

C2 CAP, 2.0pF, +/- 0.1pF, 0603, ATC 1

C3, C4 CAP, 0.5pF, +/-0.05pF, 0805, ATC 600F 2

C5,C6 CAP, 1.0pF, +/-0.05 pF, 0805, ATC 600F 2

C7,C8,C9,C10 CAP, 3.0pF, +/-0.1pF, 250V, 0805, ATC 600F 4

C11,C24 CAP, 47pF,+/-5%, 250V, 0805, ATC 600F 2

C12,C25 CAP, 100pF, +/-5%, 250V, 0805, ATC 600F 2

C13,C26 CAP, 33000PF, 0805,100V, X7R 2

C14 CAP 10uF 16V TANTALUM 1

C15,C16,C17,C18 CAP, 3.9pF, +/-0.1pF, 250V, 0805, ATC 600F 4

C19,C20 CAP, 1.2pF, +/-0.05pF, 0805, ATC 600F 2

C27 CAP, 1.0UF, 100V, 10%, X7R, 1210 1

C28 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1

J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2

J3 HEADER RT>PLZ .1CEN LK 9POS 1

J4 CONNECTOR ; SMB, Straight, JACK,SMD 1

W1 CABLE ,18 AWG, 4.2 1

PCB, RO4350, 0.020 MIL THK, CGHV14250, 1.2-1.4GHZ 1

Q1 CGHV14250 1

CGHV14250-AMP Demonstration Amplier Circuit

7CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV14250-AMP Demonstration Amplier Circuit Outline

CGHV14250-AMP Demonstration Amplier Circuit Schematic

8CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Product Dimensions CGHV14250F (Package Type — 440162)

Product Dimensions CGHV14250P (Package Type — 440161)

9CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Part Number System

Parameter Value Units

Upper Frequency11.4 GHz

Power Output 250 W

Type F = Flanged

P = Package -

Table 1.

Note1: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code Code Value

C 2

D 3

E 4

F 5

G 6

H 7

J 8

K 9

Examples: 1A = 10.0 GHz

2H = 27.0 GHz

Table 2.

Type

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

CGHV14250F

10 CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Product Ordering Information

Order Number Description Unit of Measure Image

CGHV14250F GaN HEMT Each

CGHV14250P GaN HEMT Each

CGHV14250-TB Test board without GaN HEMT Each

CGHV14250P-AMP Test board with GaN HEMT installed Each

CGHV14250F-AMP Test board with GaN HEMT installed Each

11 CGHV14250 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Disclaimer

Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/rf

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing & Sales

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.407.5639