MBR1635 - MBR1660 MBR1635 - MBR1660 Features * * * * * * Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. PIN 1 + + CASE PIN 2 CASE Positive 1 2 TO-220AC Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter Units 1635 1645 1650 1660 35 45 50 60 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current .375 " lead length @ TA = 125C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 150 A -65 to +175 C Operating Junction Temperature -65 to +150 C Value Units 2.0 W IFSM Tstg TJ 16 V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation RJA Thermal Resistance, Junction to Ambient 60 C/W RJL Thermal Resistance, Junction to Lead 1.5 C/W Electrical Characteristics Symbol TA = 25C unless otherwise noted Device Parameter 1635 VF IR IRRM Forward Voltage IF = 16 A, TC = 25C IF = 16 A, TC = 125C Reverse Current @ rated VR TA = 25C TA = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation 1645 Units 1650 1660 0.63 0.57 0.75 0.65 V V 0.2 40 1.0 50 mA mA 1.0 0.5 A MBR1635 - MBR1660 Rev. C (continued) 20 16 12 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 8 4 0 0 25 50 75 100 125 Ambient Temperature [C] 150 175 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics Figure 1. Forward Current Derating Curve 75 50 25 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 MBR1635-MBR1645 10 10 Reverse Current, IR [mA] Forward Current, IF [A] 100 50 TA = 25 C T A = 150 C MBR1650-MBR1660 1 MBR1635-MBR1645 0.1 S Pulse Width = 300 2% Duty Cycle 0 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] 1 2000 MBR1635-MBR1645 1000 MBR1650-MBR1660 500 200 100 0.1 1 10 Reverse Voltage, VR [V] Figure 5. Total Capacitance 2001 Fairchild Semiconductor Corporation 100 TA = 75 C 0.1 MBR1635-MBR1645 0.01 TA = 25 C MBR1650-MBR1660 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Transient Thermal Impedance [C/W] 5000 T A = 125 C MBR1650-MBR1660 1 0.001 1.2 Figure 3. Forward Voltage Characteristics Total Capacitance, CT [pF] 125 Figure 2. Non-Repetitive Surge Current 50 0.01 150 100 10 1 0.1 0.01 0.1 1 10 Pulse Duration [s] 100 Figure 6. Thermal Impedance Characteristics MBR1635 - MBR1660 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. 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