BFR 182 NPN Silicon RF Transistor * For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA * fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 182 SOT-23 RGs Q62702-F1315 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation Ptot TS 93 C Values Unit V mA mW 250 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 C Thermal Resistance Junction - soldering point 1) RthJS 230 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Sep-04-1996 BFR 182 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO A - - 1 hFE IC = 10 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain A - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Sep-04-1996 BFR 182 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.33 0.5 - 0.2 - - 0.6 - Cce VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz F Noise figure dB IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.2 - f = 1.8 GHz - 1.9 - f = 900 MHz - 17.5 - f = 1.8 GHz - 11.5 - f = 900 MHz - 14.5 - f = 1.8 GHz - 9 - Power gain 2) Gma IC = 10 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 10 mA, VCE = 8 V, ZS =ZL= 50 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Sep-04-1996 BFR 182 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.8499 fA BF = 84.113 - NF = 0.56639 - VAF = 21.742 V IKF = 0.14414 A ISE = 8.4254 fA NE = 0.91624 - BR = 10.004 - NR = 0.54818 - VAR = 2.2595 V IKR = 0.03978 A ISC = 5.9438 fA NC = 0.5641 - RB = 2.8263 IRB = 0.071955 mA RBM = 3.4217 RE = 2.1858 RC = 1.8159 CJE = 8.8619 fF VJE = 1.0378 V MJE = 0.40796 - TF = 22.72 ps XTF = 0.43147 - VTF = 0.34608 V ITF = 6.5523 mA PTF = 0 deg CJC = 490.25 fF VJC = 1.0132 V MJC = 0.31068 - XCJC = 0.19281 - TR = 1.7541 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.64175 - TNOM 300 K LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0 nH LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/357.htm Semiconductor Group 4 Sep-04-1996 BFR 182 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Sep-04-1996 BFR 182 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter Ccb 1.1 10 pF GHz 0.9 fT 0.8 10V 8V 8 5V 7 0.7 3V 6 2V 0.6 5 0.5 4 0.4 1V 3 0.3 0.7V 2 0.2 1 0.1 0.0 0 0 4 8 12 16 V VR 22 0 5 10 15 mA 25 IC Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 12 20 10V 3V dB G G dB 2V 10V 3V 16 8 2V 14 1V 6 12 1V 0.7V 4 10 0.7V 8 2 0 5 10 15 mA 25 0 IC Semiconductor Group 6 4 8 12 16 20 mA IC 26 Sep-04-1996 BFR 182 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50) f = Parameter 20 VCE = Parameter, f = 900MHz 30 IC=10mA 8V dB 0.9GHz G dBm 5V 20 3V IP 3 16 0.9GHz 14 2V 15 12 1.8GHz 1V 10 10 1.8GHz 5 8 6 0 0 2 4 6 8 V 12 0 5 10 15 V V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 32 dB 28 IC=10mA dB 28 G IC=10mA 24 S21 26 22 24 20 22 18 20 16 18 14 16 12 14 10 12 8 10 6 10V 1V 8 6 4 0.0 25 V CE 2 0 0.0 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 4 3.5 7 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Sep-04-1996 BFR 182 Package Semiconductor Group 8 Sep-04-1996