Reflective Photosensors (Photo Reflectors) CNB2301 (ON2270) Reflective Photosensor Unit : mm Overview 9.01.0 CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo detector in a single resin package. 2.00.2 Mark for indicating anode side C0.5 1 3 2.70.2 0.4 Chip center 9.01.0 Visible light cutoff resin is used 4-0.7 2.00.2 Features Ultraminiature : 2.7 x 3.4 mm 4-0.5 0.1 High current-transfer ratio 2 0.5 0.15 4 1.50.2 1.8 Detection of paper, film and cloth Detection of position and edge Detection of rotary positioning Liquid level sensor 3.40.3 ; ;; Applications Start, end mark detection of magnetic tape 1 Absolute Maximum Ratings (Ta = 25C) Parameter Symbol Ratings Reverse voltage (DC) Unit VR 3 V IF 50 mA PD*1 75 mW IC 30 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage VCEO 20 V VECO 5 V Collector power dissipation PC*2 75 mW Operating ambient temperature Topr -25 to +85 C Storage temperature Tstg -30 to +100 C Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Temperature 2 3 4 Pin connection *1 Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C. Electrical Characteristics (Ta = 25C) Parameter Symbol Conditions Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals VF IR Ct VR = 0V, f = 1MHz Output characteristics Collector cutoff current ICEO min typ max IF = 50mA 1.3 1.5 V VR = 3V 0.01 10 A 1.0 A 12.0 mA 2.0 A 30 VCE = 10V IC*1, *2 VCC = 5V, IF = 2mA, RL = 100, d = 1mm Collector current Leakage current Transfer characteristics Response time ID tr *3 , tf 0.46 VCC = 5V, IF = 2mA, RL = 100 *4 VCC = 10V, IC = 1mA, RL = 100 C *2 Output classifications Class Q R S IC (mA) 0.46 to 1.75 1.3 to 4.95 3.15 to 12.0 s 1.5 V ; ;;; ;;; ;;; ;;;; *1 I pF 150 Collector to emitter saturation voltage VCE(sat) IF = 5mA, IC = 0.5mA Unit current measurement method Evaporated Al Glass plate (t = 1mm) *3 Time ;; ;; required for the output current to increase from 10% to 90% of its final value *4 Time required for the output current to decrease from 90% to 10% of its initial value IF IC RL VCC Note) The part number in the parenthesis shows conventional part number. 1 CNB2301 Reflective Photosensors (Photo Reflectors) IF , IC -- Ta IF -- V F Ta = 25C IF IC 20 VF (V) 40 Forward voltage 40 30 IF = 50mA 50 IF (mA) 50 30 20 60 80 0 100 0 1.6 2.0 1 10 2 5mA 1 2mA 1mA 10 -1 1 40 VCC = 10V Ta = 25C tr (s) RL = 1k Rise time 500 100 10 2 Ambient temperature Ta (C ) 1 10 -2 10 -1 40 100 10 100 20 60 80 100 IC -- d 10 3 80 0 Ambient temperature Ta (C ) 1 Collector current IC (mA) 10 80 60 VCC = 5V IF = 2mA ; ;; 10 60 100 80 tr -- IC VCE = 10V 40 80 120 0 - 40 - 20 10 2 10 10 4 20 60 VCC = 5V IF = 2mA RL = 100 Collector to emitter voltage VCE (V) 10 -1 40 IC -- Ta IF = 10mA 10 10 -2 10 -1 10 3 1 20 160 ICEO -- Ta 0 0 Ambient temperature Ta (C ) IC (%) IC (mA) 10 10 -2 - 40 - 20 0 - 40 - 20 2.4 Ta = 25C Collector current IC (mA) Collector current 1.2 IC -- VCE 10 2 10 0.8 10 2 Forward current IF (mA) ICEO (A) 0.4 Forward voltage VF (V) VCC = 5V Ta = 25C RL = 100 d = 1mm 1 0.4 Relative output current 40 IC -- I F Dark current 1mA IC (%) 20 10 3 10 2 10mA 0.8 Relative output current 0 Ambient temperature Ta (C ) 10 -1 1.2 10 10 0 - 25 2 VF -- Ta 1.6 60 Forward current Forward current, collector current IF , IC (mA) 60 d 40 20 0 0 2 4 6 Distance d (mm) 8 10 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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