1
Reflective Photosensors (Photo Reflectors)
2.0±0.2 2.0±0.2
Mark for indicating
anode side
C0.5
3.4±0.3
0.4
2.7±0.2
9.0±1.0 9.0±1.0
Chip
center
1.8
24
13
4-0.5
±0.1
4-0.7
0.5
0.15
Pin connection
Unit : mm
1.5±0.2
1432
;;
;
*1 Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings Unit
Input (Light
Reverse voltage (DC)
V
R
3V
emitting diode)
Forward current (DC)
I
F
50 mA
Power dissipation
P
D*1
75 mW
Collector current
I
C
30 mA
Output (Photo
Collector to emitter voltage
V
CEO
20 V
transistor)
Emitter to collector voltage
V
ECO
5V
Collector power dissipation
P
C*2
75 mW
Temperature
Operating ambient temperature
T
opr
–25 to +85 ˚C
Storage temperature
T
stg
–30 to +100
˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions min typ max Unit
Input
Forward voltage (DC)
V
F
I
F
= 50mA 1.3 1.5 V
characteristics
Reverse current (DC)
I
R
V
R
= 3V 0.01 10 µA
Capacitance between terminals C
t
V
R
= 0V, f
= 1MHz 30 pF
Output characteristics
Collector cutoff current
I
CEO
V
CE
= 10V 1.0 µA
Collector current
I
C*1, *2
V
CC
= 5V, I
F
= 2mA, R
L
= 100Ω, d
= 1mm
0.46 12.0 mA
Transfer
Leakage current
I
D
V
CC
= 5V, I
F
= 2mA, R
L
= 100Ω2.0 µA
characteristics
Response time
t
r*3
, t
f*4
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω150 µs
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 5mA, I
C
= 0.5mA 1.5 V
CNB2301 (ON2270)
Reflective Photosensor
Features
Ultraminiature : 2.7 × 3.4 mm
Visible light cutoff resin is used
High current-transfer ratio
Overview
CNB2301 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Darlington phototransistor used as the photo
detector in a single resin package.
*3 Time required for the output current to increase from 10% to 90% of its final value
*4 Time required for the output current to decrease from 90% to 10% of its initial value
*1 IC classifications
Class Q R S
I
C
(mA) 0.46 to 1.75 1.3 to 4.95 3.15 to 12.0
Evaporated Al
Glass plate
(t = 1mm)
;
;
VCC
;
;
RL
IFIC
;;
;;;
;;;
;;;
;;
;
*2 Output current measurement method
Applications
Detection of paper, film and cloth Detection of position and edge
Detection of rotary positioning Liquid level sensor
Start, end mark detection of magnetic tape
Note) The part number in the parenthesis shows conventional part number.
2
CNB2301 Reflective Photosensors (Photo Reflectors)
IF , IC — Ta
Forward current, collector current I
F
, I
C
(mA)
60
50
40
30
20
10
Ambient temperature Ta (˚C )
0 20406080100
0
– 25
IF — VF
60
30
20
10
50
40
Forward voltage VF (V)
Forward current I
F
(mA)
0.4 0.8 1.2 1.6 2.42.0
00
Ta = 25˚C
VF — Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
0 20406080100
0
– 40 – 20
0 20406080100– 40 – 20
0 20406080100– 40 – 20
IC — IF
10
3
10
2
10
1
Forward current IF (mA)
Collector current I
C
(mA)
10 10
2
10
3
10
–1
1
V
CC
= 5V
Ta = 25˚C
R
L
= 100Ω
d = 1mm
IC — VCE
10
2
10
1
10
–1
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
11010
2
10
–2
10
–1
Ta = 25˚C
Relative output current I
C
(%)
IC — Ta
160
120
80
40
Ambient temperature Ta (˚C )
0
V
CC
= 5V
I
F
= 2mA
R
L
= 100Ω
ICEO — Ta
10
2
1
10
–1
10
Ambient temperature Ta (˚C )
V
CE
= 10V
Dark current I
CEO
(µA)
10
–2
11010
–1
tr — IC
10
Collector current IC (mA)
Rise time t
r
(µs)
1
10
–2
10
4
10
3
10
2
V
CC
= 10V
Ta = 25˚C
Distance d (mm)
IC — d
100
60
40
20
80
Relative output current I
C
(%)
246 108
00
V
CC
= 5V
I
F
= 2mA
I
F
I
C
10mA
1mA
I
F
= 50mA
I
F
= 10mA
5mA
2mA
1mA
100Ω
R
L
= 1kΩ
500Ω
d
;;
;
Caution for Safety
DANGER
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Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
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material in powder or vapor form is harmful to human
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Observe the relevant laws and regulations when dispos-
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dustrial waste or household refuse when disposing of
GaAs-containing products.
2001 MAR
