SIEMENS FEATURES * High Current Tranafer Ratios at 10 mA: 40-320% at 1 mA: 60% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward Current Withstand Test Voltage, 5300 VACrus * High Collector-Emltter Voltage, Veeo=70 V Low Saturation Voltage * Fast Switching Times Fleld-Effect Stable by TRICS (TRansparent [On Shield) Temperature Stable Low Coupling Capacitance End-Stackable, .100"(2.54 mm) Spacing High Common-Mods Interference Immunity (Uncon- nected Base) Underwriters Lab File #52744 2h VDE 0864 Available with Option 1 SMD Option - See SFH6106/16/56 Data Sheet DESCRIPTION The SFH61XA features a high current transfer ratic, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransis- tor detector, and is incorporated in a plastic DIP-4 pack- age. * se 2 8 The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced Insulation up to an operation voltage of 400 Vans or DC. Specifications subject to change. SFH610A/611A/615A/617A 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY Package Dimensions in Inches (mm) 22 me Pn Orel D SF Om, HE q 268 (6 61) Anoda [1] Tf) Exnitter 255 (6 48} LF a C Cathode [Z| 3} Cotlector In 180 (4.93 Das (1 14 305 > ofa 778 | { 1 ec 3.81 | | 130 [3.30 195 43433 I 1 116 (2.92! a F oso ys 02 jo". | Tye J pate Tyr O22 (56 on (30) 016 | 46) 1 0012.54) 008 povuelee Typ SFHBIIA SFHE1SAMSITA Cathoda cya ce Anode oy [q_|Cotectes . ~ K anode (Z| [S}emmer CatrodaLz | 3 Jenner Maximum Ratings Emitter Reverse Voltage oo... cee ceeneerrrienrnsereenes DC Forward Currant circ Surge Ferward Current (tps10 ps) vase Total Power Dissipatlon oo... ce ceeeeereceeneeereetectenes Detector Collector-Emitter Voltage... Emitter-Collector Valtags Callactor Current ............... Collactor Current (tpS1 ms) Total Power Dissipation oo... cee etree eee TED Ti Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, Part 2, NOW. 24 oe eens cree ssrertrneerineecreeees 5900 VACa us Creapage cere MIM CIBATANGE oo eecccecceteeseseeesesseeescrencearsetseteneteataeersnenaes 27 mm Insulation Thickness between Emitter and Detector ...20.4 mim Comparative Tracking Index per DIN IEC t12/VDEO 303, part 1... eee 2175 Isolation Resistance Vig = 500 V Ty=25C asic reece crenere tees Vip=500 V, Ta=100C..... Storage Temperature Range . Ambient Temperature Rang... JUNCTION TAMPSrature oo. cee cen eeeteeeteeeereennaee Soldering Temperature (max. 10s. Dip Soldering Distance to Seating Plane 21.5 MM) nee 26C 5-236 Characteristice (Ta=2 5C) I Description Symbot Unit Condition [Emitter (IRGAAS) Co | Forward Voltage Ve 125(<1.65) |v |-=60 mA Reverse Current |e foorsto) fA | MeV Capacitance: Co 3 Tor VR= -0V, fe 1 MHz | Thermal Resistance =| Alyy = 7500s(i KS a | Detector Detector (St | Phototranslstor) _ ee eee eee) Capacitance Con 52. oF Vops5 vil 1 MHz i Thermal Resistance - Ria | 590 KAW - a Collector Emitter Saturation Voltage Vorsat 0.25 (<0. 4) Vv irs 10 mA, lo= 25 mA Counting Capactance te foe Current Transfer Ratlo lle at Vee=8 V) and Collector-Emitter Leakage Current by Dash Number [ Description oe 1 -2 | -3 -4 lef |r {lp=10 mA) 40-80 63-125 100-200 160-320 | % g z ne a _ + . wee a8 tel ig (Ip=1 mA) 30 {>13) | 45(>22) | 70(>34) | 90(>56) | % af 5 ~ _ woe ae Bf Collector-Emitter Leakage Current, leo =| 2 (850) =| 2(s50) | 5 5(<100) | 5(<100) | na es Vop=10 V Switching Times (Typical) Linear Operation (without saturation) 1p=10 mA, Vec=5 V, Ta=25C le A=? 75a Load Resistance RL 75 Qa Turn- -on Time ton 3.0 Rise Time ty 2.0 Tum. off Time torr 2.3 Fall Time te 2.0 Cut-off Frequency Feo | 250 Switching Operation (with saturation) lr 1KQ | -2and-3) -4 ~_. oO Vop=5 Ip=20 mA Ip=10 mA Ip=5 mA Turn-on Time ton 3.0 4. 2 6.0 BS : c Rise Time tr 2.0 3.0 4.6 HS Turn- off Time torr 18 23 25 HS Fall Time Ip 11 14 15 ps SFHBIOALTIASISASITA 5-237 Figure 1, Current transfer ratio (typ.) v8. temperature Ip=10 mA, Vee=0.5 Vv k how 5 0 . 25 0 5 OO mT, ec 75 Figure 4. Transistor capacitance (typ.) vs. collector-emitter voltages Ta=25C, f=1 MHz Ve Figure 7. Permissible diode forward current va. ambient temp. ; Figure 2, Output characteristics (typ.) Coltector current vs. collector-emitter voltage T,=25C 30 mA i ri] 4 5 0 Me Figure 5. Permissiable pulse handling capability. Fwd. current vs. pulse width Pulse cycle D=parameter, T,=25C 10 mA 53 ) 5 ni 5 1 wo wo ow wl sw +fh 5-238 Figure 3. Diode forward voltage (typ.} va. forward current Ye 09 19" 10 0 oma? +], Figure 6. Permissible power dlasipation vs. ambient temp. 7m my Prot nO "c x a) ~ hh SEHGIOATIANSAITTA