6367254 MOTOROLA SC CXSTRS/R_F) S6D 82041__D MAXIMUM RATINGS a T "2. g AS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 40 Vde MMBT3906 Collector-Base Voltage Vcso 40 Vde Emitter-Base Voltage VERO 5.0 Vde CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) Collector Current Continuous ic 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mW 3 Collector Ta = 25C Derate above 25C 1.8 mWFC 1 Thermal Resistance Junction to Ambient Rea 556 CimWw Base Total Device Dissipation Pp 300 mw 2 Emitter Alumina Substrate,*" Ta = 25C Derate above 25C 2.4 mWwrc Thermal Resistance Junction to Ambient Resa 417 CimW Junction and Storage Temperature Ty. Tt 150 c GENERAL PURPOSE TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina, PNP SILICON DEVICE MARKING MMBT3806 = 2A | Refer to 2N3905 for graphs, ELECTRICAL CHARACTERISTICS (Ta = 28C unless otherwise noted.) | Characteristic | Symbol Min Max Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voitage(1) V(BRICEO 40 _ Vde (lc = 1.0 mAde, Ip = 0) Collector-Base Breakdown Voltage V(BRICBO 40 _ Vde (Ic = 10 wAde, Ig = 0) Emitter-Base Breakdown Voltage V(BRIEBO 5.0 - Vde (le = 10 pAds, Ic = 0) Base Cutoff Current BL _ 50 nAde (VcE = 30 Vde, Vge = 3.0 Vde) Collector Cutoff Current IcEx _ 50 nAdc (Voce = 30 Vde, Vee = 3.0 Vde) ON CHARACTERISTICS(1) DC Current Gain hee (I = 0.1 mAde, VcE = 1.0 Vdc) 60 (ic = 1.0 mAdc, VcE = 1.0 Vde) 80 _ (ig = 10 mAde, Veg = 1.0 Vde) 100 300 {I = 50 mAds, VcE = 1.0 Vdc) 60 - {lc = 100 mAde, Vce = 1.0 Vdc} 30 Coltector-Emitter Saturation Voltage Vek{sat) Vde. {ig = 10 mAde, Ip = 1.0 mAdc) _ 0.25 {le = 50 mAdc, Ip = 5.0 mAdc) _ 0.4 Base-Emitter Saturation Voltage VBE(sat) Vde (I = 10 mAde, Ig = 1.0 mAdc) 0.65 0.85 (I = 50 mAde, Ig = 5.0 mAdc) _ 0.95 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 250 MHz {te = 10 mAde, Veg = 20 Vde, f = 100 MHz) Output Capacitance Cobo _ 45 pF (Vcg = 6.0 Vde, IE = 0, f = 100 kHz) input Capacitance - Cibo - 10.0 pF (VBE = 0.5 Vde, Ic = 0, f = 100 kHz) Input impedance hie 2.0 12 k ohms (Ic = 1.0 mAdc, Veg = 10 Vde, f = 1.0 kHz) Voltage Feedback Ratio tre 0.1 10 X 10-4 {Ic = 1.0 mAdc, Voge = 10 Vde, f = 1.0 kHz) Small-Signal Current Gain hie 100 400 - (Ic = 1.0 mAde, Voce = 10 Vdc, f = 1.0 kHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-106MOTOROLA SC {XSTRS/R FI ie DE Pese7esy onseoua 4 ~ were ae ee -- - : [ 6367254 MOTOROLA SC (XSTRS/R F) 96D 82042. D MMBT3906 r js T2aelsS ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise nated.) i Characteristic Symbol Min Max Unit z Output Admittance hoe 3.0 60 pmhos : (Ig = 1.0 mAdc, Voge = 10 Vde, f = 1.0 kHz) Noise Figure NF - 4.0 dB (Ic = 100 pAde, Vcg = 5.0 Vde, Rg = 1.0 k ohm, f = 10 10 Hz to 15.7 kHz) SWITCHING CHARACTERISTICS i Delay Time (Voc = 3.0 Vde, Vge = 0.5 Vde td _ 35 ns Rise Time Ic = 10 mAdc, lpi = 1.0 mAdc) tr _ 35 ns Storage Time (Vcc = 3.0 Vde, Ic = 10 mAdc, tg = 225 ns Fall Time IB1 = Iga = 1.0 mAdc) tt - 75 ns (1) Pulse Width < 300 ys, Duty Cycle = 2.0%. i MOTOROLA SMALL-SIGNAL SEMICONDUCTORS weep siivercee pete 3-107 ES iMOTOROLA SC {XSTRS/R Ft Se deff e3e7254 ooaeoua & wee ss aor "YE - A SC UMSTRS/R FEF) , 43 DO. 6367254 MOTOROLA SC (XSTRS/R F) .... 96D 82043. . MAXIMUM RATINGS . Tv 2 G . Ss Rating Symbol Value Unit Collector-Emitter Voltage VcEO 30 Vv : Collector-Base Voltage VcBo 40 Vv - MMBT4123 . Emitter-Base Voltage - VEBO 5.0 Vv Collector Current Continuous Ic 200 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 3Con Ta = 25C - Collector Derate above 26C 1.8 mWwrc a 3 Thermal Resistance Junction to Ambient Raa 556 CimW 1 go Bose Total Device Dissipation Pp 300 mw 2 Alumina Substrate,** Ta = 25C 2 Emitter Derate above 25C 2.4 mWFC Thermal Resistance Junction to Ambient Raa 417 CimW Junction and Storage Temperature TJ, Tstg 150 C *FR-5 = 1.0 x 0.75 x 0.62 In. GENERAL PURPOSE TRANSISTOR **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. NPN SILICON DEVICE MARKING | MMBT4123 = 58 | i: Refer to 2N4123 for graphs. ELECTRICAL CHARACTERISTICS {Ta = 25C unless otherwise noted.) Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) VIBRICEO 25 _ Vde (ic = 1.0 mAde, Ip = 0) Collector-Base Breakdown Voltage V(BRICBO 30 _ Vde {ic = 10 pAde, Ie = 0) Emitter-Base Breakdown Voltage V(BRJEBO 5.0 _ Vde (IE = 10 Ade, Ic = 0) Collector Cutoff Current IcBo _ 50 nAdc (Veg = 20 Vde, Ig = 0) Emitter Cutoff Current lIEBO _ 50 nAdc (VBE = 3.0 Vdc, Ic = 0) ON CHARACTERISTICS DC Current Gain(1) hee - (Ig = 2.0 mAdc, Voge = 1.0 Vdc} 50 150 (I_ = 50 mAdc, Veg = 1.0 Vdc} 25 - Colfector-Emitter Saturation Voltage(t} VcE(sat} _ 0.3 Vde : (ic = 50 mAdc, Ig = 5.0 mAde) Base-Emitter Saturation Voltage(1) VBE{(sat) _ 0.95 Vde {Ic = 50 mAde, Ip = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain ~ Bandwidth Product fr 250 _ MHz {Ig = 10 mAdeo, Veg = 20 Vdc, f = 100 MHz) Output Capacitance Cobo _ 4.0 pF (Vop = 5.0 Vde, Ig = 0, f = 100 kHz) Input Capacitance Cibo _- 8.0 pF (VBE = 0.5 Vde, ic = 0, f = 100 kHz) Collector-Base Capacitance Cob _ 4.0 pF (lg = 0, Veg = 5.0 V, f = 100 kHz) Small-Signal Current Gain hfe 50 200 _ (Ic = 2.0 mAde, Voce = 10 Vde, f = 1.0 kHz) Current Gain High Frequency Ihfel 25 - _ (ig = 10 mAdc, Veg = 20 Vde, f = 100 MHz) Noise Figure . NF - 6.0 dB (lc = 100 pAdc, Veg = 5.0 Vde, Rg = 1.0 kohm, Noise Bandwidth = 10 Hz to 16.7 kHz} (1] Pulse Tast: Pulse Width = 300 us, Duty Cycle = 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-108 St shaw egal ae eetMOTOROLA SC {XSTRS/R FI Pp BBB AOR MOTOROLA SC {XSTRS/R F) XIMUM RATINGS We DEG eae7254 ooseouy a 96b 82044 DBD vat Rating Symbol Nalue Unit T y 2 Gg - LS Collector-Emitter Voltage VcEO 30 Vde Collector-Base Voltage VcBo 30 Vde Emitter-Base Voitage VEBO 4.0 Vde MMBT4125 Collector Current Continuous Ic 200 mAdcs Total Device Dissipation @ Ta = 25C Pp 360 mw CASE 318-02/03, STYLE 6 Derate above 26C . 2.8 mWwPc SOT-23 (TO-236AA/AB) Total Device Dissipation @ Te = 25C Pb 1.0 Watt Derate above 25C 8.0 mWwPrC Operating and Storage Junction Ty. Tstg {| 55 to +150 c Temperature Range 3 Collector THERMAL CHARACTERISTICS a 3 Characteristic Symbol Max Unit 1 eo Bese Total Device Dissipation FR-5 Board,* PD 225 mw 2 , Ta = 25C 2 Emitter Derate above 25C 18 mWPc Thermal Resistance Junction to Ambient RaJaA 556 *CimW Total Device Dissipation Pp 300 mw Alumina Substrates? Ta = 25C GENERAL PURPOSE TRANSISTOR Derate above 25C 2.4 mWwPrG PNP SILICON Thermal Resistance Junction to Ambient RaJA 417 *CcimW Junction and Storage Temperature Ty. Tstq 150 C *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING [ mmBT4125 = 2D ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} | Refer to 2N4125 for graphs. | Characteristic | Symboi Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) ViBR)CEO 30 _ Vde (Ic = 1.0 mAde, Ig = 0) Collector-Base Breakdown Voltage ViBRICBO 30 _ Vde (Ie = 10 pAde, Ie = 0) Emitter-Base Breakdown Voltage V(BRIEBO 4.0 ad Vde (IE = 10 pAdc, Ic = 0} Collector Cutoff Current 'cBo - 50 nAdc (Vcp = 20 Vdc, Ip = 0) Emitter Cutoff Current lEBo _ 50 nAdce (VBE = 3.0 Vdc, Ic = 0) ON CHARACTERISTICS DC Current Gain(1} hfe 50 150 _- (lc = 2.0 mAdec, Voge = 1.0 Vde) 25 _ {i = 50 mAde, Voce = 1.0 Vdc} Collector-Emitter Saturation Voitage(1) Vce{sat) _ 0.4 Vde (Ic = 50 mAde, Ip = 5.0 mAdc) Base-Emitter Saturation Voltage(1} VBE(sat} _ 0.95 Vdo (ic = 50 mAdc, Ip = 5.0 mAdc} SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 200 ~ MHz (Ic = 10 mAde, Voce = 20 Vde, f = 100 MHz) Input Capacitance Cibo - 10 pF (Vee = 0.5 Vde, Ic = 0, f = 100 kHz) Collector-Base Capacitance Cob 45 pF (Veg = 5.0 Vde, tg = 0, f = 100 kHz) Small-Signal Current Gain hfe 50 200 - (ic = 2.0 mAdc, Vcg = 10 Vde, f = 1.0 kHz) Current Gain High Frequency Ihfel 2.0 _ _ (ic = 10 mAde, VcE = 20 Vde, f = 100 MHz) Noise Figure NF _ 5.0 dB (Ic = 100 zAdc, Vcg = 5.0 Vde, Rg = 1.0 kohm, Noise Bandwidth = 10 Hz to 15.7 kHz} (1) Pulse Test: Pulse Width = 300 ys, Duty Cycle = 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-1096367254 MOTOROLA SC CXSTRS/R F) 96D 82045. D MAXIMUM RATINGS T- 35-17 Rating Symbol Value Unit Collector-Emitter Voltage VcEO 40 Vde M M BT440 1 Collector-Base Voltage VcsBo 60 Vde Emitter-Base Voltage VEBO 6.0 Vde CASE 318-02/03, STYLE Collector Current Continuous Ic 600 mAdc 318-02/03, 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25C 3 Collector Derate above 25C 18 mW?rc x 3 Thermal Resistance Junction to Ambient RoJA 556 CimW 1 i eo Base Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C 2 Emitter Derate above 25C 2.4 mWwFrC Thermal Resistance Junction to Ambient ReJA 417 cimW Junction and Storage Temperature Ty. Tstg 150 C TFRG = 1,020.78 x 062 In, SWITCHING TRANSISTOR **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. NPN SILICON DEVICE MARKING | mMBT4401 = 2x | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Refer to 2N4401 for graphs. | Characteristic | Symbol [ Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (Ic = 1.0 mAde, Ip = 0) VIBR)CEO 40 _ Vde Collector-Base Breakdown Voltage (Ic = 0.1 mAdc, Ie = 0) VIBRICBO 60 - Vde Emitter-Base Breakdown Voltage (Ie = 0.1 mAdc, Ic = 0) V(BRIEBO 6.0 - Vdc Base Cutoff Current (Vog = 35 Vde, Vep = 0.4 Vdc) Bev - 0.1 pAdc Collector Cutoff Current (VcE = 36 Vde, Veg = 0.4 Vde) Icex _ 0.1 pAdc ON CHARACTERISTICS(1) DC Current Gain (le = 0.1 mAde, Voge = 1.0 Vde) hre 20 _ _ (Ic = 1.0 mAdc, VcE = 1.0 Vde) 40 {Ic = 10 mAde, VcgE = 1.0 Vdc) 80 _ (l = 150 mAde, VoE = 1.0 Vdc) 100 300 (I = 500 mAdc, Vog = 2.0 Vdo) 40 _ Collector-Emitter Saturation Voltage (I = 180 mAdc, Ip = 15 mAdc) VcE(sat} _ 0.4 Vde (I = 500 mAdc, Ip = 50 mAdc) _ 0.75 Base-Emitter Saturation Voltage (lg = 150 mAdc, Ig = 15 mAdc) VBE(sat) 0.75 0.95 Vde (Ie = 500 mAdc, Ip = 50 mAdc) 1.2 1 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 250 MHz (Ic = 20 mAdc, Vce = 10 Vde, f = 100 MHz) Collector-Base Capacitance Cob - 6.5 pF (Vcg = 5.0 Vde, Ie = 0, f = 100 kHz) Emitter-Base Capacitance Ceb => 30 pF (Vpe = 0.5 Vde, Ic = 0, f = 100 kHz) Input Impedance hie 1.0 15 k ohms (lc = 1.0 mAde, Vce = 10 Vde, f = 1.0 kHz) . Voltage Feedback Ratio hre 0.1 8.0 x 10-4 (Ic = 1.0 mAdc, Veg = 10 Vde, f = 1.0 kHz) Small-Signal Current Gain hte 40 500 (Ic = 1.0 mAde, Voce = 10 Vde, f = 1.0 kHz} Output Admittance hoe 1.0 30 umhos (Ic = 1.0 mAdc, Voge = 10 Vdc, f = 1,0 kHz) SWITCHING CHARACTERISTICS Delay Time (Vcc = 30 Vdc, Veg = 2.0 Vde, ta _ 15 ns Rise Time I = 150 mAde, Ip, = 15 mAde) tr _ 20 ns Storage Time (Voc = 30 Vde, I = 150 mAdc, ts _ 225 ns Fall Time 'e1 = 'p2z = 18 mAdc) tf 30 ns (i) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-110