2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N5400 2N5401 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCE0 120 V 150 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 130 V 160 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) - IC 600 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 1A Base current - Basisstrom - IB 100 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis 2) - IC = 1 mA, - IC = 10 mA, - IC = 50 mA, - VCE = 5 V - VCE = 5 V - VCE = 5 V 2N5400 hFE hFE hFE 30 40 40 - - - - 180 - - IC = 1 mA, - IC = 10 mA, - IC = 50 mA, - VCE = 5 V - VCE = 5 V - VCE = 5 V 2N5401 hFE hFE hFE 50 60 50 - - - - 240 - Collector-Base cutoff current - Kollektor-Basis-Reststrom 1 2 - VCB = 100 V, (E open) - VCB = 120 V, (E open) 2N5400 2N5401 - ICBO - ICBO - - - - 100 nA 50 nA - VCB = 100 V, Tj = 100C, (E open) - VCB = 120 V, Tj = 100C, (E open) 2N5400 2N5401 - ICBO - ICBO - - - - 100 A 50 A Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N5400 / 2N5401 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - -- 50 nA - VCEsat - VCEsat - - - - 0.2 V 0.5 V - VBEsat - VBEsat - - - - 1.0 V 1.0 V fT 100 MHz - 400 MHz CCBO - - 6 pF F F - - - - - 8 dB Emitter-Base-cutoff current - Emitter-Basis-Reststrom - VEB = 3 V, (C open) - IEBO Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RS = 10 , f = 1 kHz 2N5400 2N5401 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 200 K/W 1) Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 2N5550 / 2N5551 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 1 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG