2N5400 / 2N5401
2N5400 / 2N5401
PNP General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP
Version 2006-06-17
Dimensions - Maße [mm]
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
2N5400 2N5401
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCE0 120 V 150 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 130 V 160 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) - IC600 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 1 A
Base current – Basisstrom - IB100 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 1 mA, - VCE = 5 V
- IC = 10 mA, - VCE = 5 V
- IC = 50 mA, - VCE = 5 V
2N5400
hFE
hFE
hFE
30
40
40
–
–
–
–
180
–
- IC = 1 mA, - VCE = 5 V
- IC = 10 mA, - VCE = 5 V
- IC = 50 mA, - VCE = 5 V
2N5401
hFE
hFE
hFE
50
60
50
–
–
–
–
240
–
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 100 V, (E open)
- VCB = 120 V, (E open)
2N5400
2N5401
- ICBO
- ICBO
–
–
–
–
100 nA
50 nA
- VCB = 100 V, Tj = 100°C, (E open)
- VCB = 120 V, Tj = 100°C, (E open)
2N5400
2N5401
- ICBO
- ICBO
–
–
–
–
100 µA
50 µA
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
16
18
9
2 x 2.54
CBE
2N5400 / 2N5401
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
- VEB = 3 V, (C open) - IEBO – –- 50 nA
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
–
–
–
–
0.2 V
0.5 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
- VBEsat
–
–
–
–
1.0 V
1.0 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz fT100 MHz – 400 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO ––6 pF
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA,
RS = 10 Ω, f = 1 kHz
2N5400
2N5401
F
F
–
–
–
–
–
8 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren 2N5550 / 2N5551
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1
