2N5551 MMBT5551
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collec tor-Emitter Volt age 160 V
VCBO Collec tor-Base Voltage 180 V
VEBO Emi tter-Bas e Voltage 6.0 V
ICCollect or Current - Cont inuous 600 mA
TJ, Tstg Operating and Storage Junc tion Temperature Range -55 to +150 °C
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5551 *MMBT5551
PDTotal De vice Dissipa tion
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJ
A
The rmal Resistance, Junction to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 3S
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor International
2N5551 / MMBT5551
2N5551/MMBT5551, Rev A
3
2N5551 / MMBT5551
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
SMALL SIGNAL CHARACTERISTICS
V
(
BR
)
CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 160 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 180 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 120 V, IE = 0,
VCB = 120 V, IE = 0, T
A
= 100°C50
50 nA
µA
IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA
hFE DC Cur r ent Gain IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V
80
80
30 250
VCE(sat)Collector-Emitter Satura tion Vo ltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.15
0.20 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 1.0
1.0 V
V
fTCurrent Ga in - Bandwidth Product IC = 10 mA, VCE = 10 V,
f = 100 MHz 100 300 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0,
f = 1.0 MHz 6.0 pF
Cibo Input Capacitance VBE = 0.5 V, IC = 0,
f = 1.0 MHz 20 pF
hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 50 250
NF Noise Figure IC = 250 µA, VCE = 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz 8.0 dB
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=2.51 1f Xti=3 Eg=1.11 V af=100 Bf=242.6 Ne=1.249 Ise=2.51 1f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m
Vtf=5 Xtf=8 Rb=10)
NPN General Purpose Amplifier
(continued)
Typical Characteristics
C o l l ecto r- E mitte r B r ea k down
Voltage with Resistance
Between E mitter-Base
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTANC E (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
I = 1.0 m A
C
Collector-Cutoff Cur rent
vs. A mb ient Temp er atu re
25 50 75 100 125
1
10
50
T - AMBIENT TEMPERATUR E ( C)
I - C OLLECTOR CURR ENT (nA)
A
CBO
°
V = 100V
CB
Typic a l P uls ed Curre nt G ain
vs Collector Cu rrent
0.1 0.2 0.5 1 2 5 10 20 50 100
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h - TYPI CAL PU LSED CU R RENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5 V
CE
C o ll ecto r -Emitter Satur ati o n
Vo ltag e vs C o llector Cu r rent
110100200
0
0.1
0.2
0.3
0.4
0.5
I - C OLLEC TOR CUR RENT (mA)
V - COLLECTOR EM ITTE R VOLTAGE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β= 10
B ase-Emitter Saturati o n
Vo ltage vs C o llector Cu rrent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTA GE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Vol tage vs
Collector Curre nt
0.1 1 10 100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
2N5551 / MMBT5551
NPN General Purpose Amplifier
(continued)
3
2N5551 / MMBT5551
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
Input and Output Capacitance
vs Reverse Voltage
0.1 1 10 100
0
5
10
15
20
25
30
V - COLLECTOR VOLTAGE (V)
CAPA CI TANCE (pF)
C
f = 1.0 M H z
CE
C
cb
ib
Smal l Signa l C ur r e nt Ga in
vs Co llect or Current
11050
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h - SMALL SIGN AL CU RRENT GAIN
C
FE
FR EG = 20 M Hz
V = 10V
CE
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reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
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Definition of Terms
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Advance Information
Preliminary
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Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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