1999. 11. 16 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP112
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
·High DC Current Gain.
: hFE=1000(Min.), ï¼ VCE=4V, IC=1A.
·Low Collector-Emitter Saturation Voltage.
·Complementary to TIP117.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current
DC IC2
A
Pulse ICP 4
Base Current DC IB50 mA
Collector Power
Dissipation
Ta=25℃PC
2
W
Tc=25℃50
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -65～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
ICEO VCE=50V, IB=0 - - 2
mA
ICBO VCB=100V, IE=0 - - 1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 mA
DC Current Gain hFE
VCE=4V, IC=1A 1000 - -
VCE=4V, IC=2A 500 - -
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.5 V
Base-Emitter On Voltage VBE(ON) VCE=4V, IC=2A - - 2.8 V
Collector Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz - - 100 pF
EQUIVALENT CIRCUIT
1999. 11. 16 2/2
TIP112
Revision No : 1
