/ : 1N4896 / thru Microsemi Corp. 1N4915A 6 Tne diode experts f SANTA ANA, CA SCOTTSDALE, AZ For more information call: (602) 941-6300 FEATURES 12.8 VOLT LOW NOISE TEMPERATURE e@ ZENER VOLTAGE 12.8V COMPENSATED e TEMPERATURE COEFFICIENT RANGE: 0.01%/C to 0.001% /C ZENER REFERENCE e N> YIELDS MAXIMUM-RMS NOISE FOR ANY BANDWIDTH DIODES MAXIMUM RATINGS Junction and Storage Temperatures: 65C to +175C DC Power Dissipation: 400 mW {| Power Derating: 3.20 mW/C above 50C 0.107 max, | yp * ELECTRICAL CHARACTERISTICS 2.716 DIA. | @ 25C, unless otherwise specified +000 et MIN. T MAX VOLTAGE EFFECTIVE MAXIMUM MAXIMUM 25.400 CHANGE WITH TEMPERATURE JEDEC CURRENT | TevpeRATURE | TEMPERATURE | TENET NORE | MPEDANCE NOISE TYPE hes AV RANGE we Ln DENS! Y NUMBER =| (Note 1&5)] ote 2& 5) (Note 3) (Note 4) __| POLARITY 0.300 say mA VOLTS C + %/C OHMS | V/V cps ofak 1620 1N4896 05 0.096 +25 to +100 0.01 400 08 } v 1N4896A 05 0.198 55 to +100 0.01 400 08 1N4897 05 0.048 +25 to +100 0.005 400 0.8 1N4897A 05 0.099 55 to +100 0.005 400 0.8 1.000 gyi 1N4898 05 0.019 +25 to +100 0.002 400 08 o.ota/0.022 25.400 1N4898A 05 0.040 55 to +100 0.002 400 0.8 Been ees DIA, | = 1N4899 05 0.010 +25 to +100 0.001 400 0.8 aia | 1N4899A 05 0.020 55 to +100 0.001 400 0.8 t 1N4900 1.0 0.096 +25 to +100 0.01 200 0.4 1N4900A 1.0 0.198 55 to +100 0.01 200 0.4 FIGURE 1 1N4901 1.0 0.048 +25 to +100 0.005 200 0.4 aN | IN4901A 1.0 0.099 55 to +100 0.005 200 04 All dimensions in 1N4902 10 0.019 +25 to +100 0.002 200 0.4 1N4902A 10 0.040 55 to +100 0.002 200 0.4 1N4903 1.0 0.010 +25 to +100 0.001 200 0.4 MECHANICAL | 1N4903A 1.0 0.020 55 to +100 0.001 200 04 CHARACTERISTICS 1N4904 2.0 0.096 +25 to +100 0.01 100 0.25 1N4904A 2.0 0.198 55 to +100 0.01 100 0.25 CASE: Hermetically sealed glass 1N4905 2.0 0.048 +25 to +100 0.005 100 0.25 case. DO-7 | 1N4905A 2.0 0.099 55 to +100 0.005 100 0.25 , . 1N4906 2.0 0.019 +25 to +100 0.002 100 0.25 FINISH: All external surfaces are 1N4906A 2.0 0.040 55 to +100 0.002 100 0.25 corrosion resistant and leads sol- 1N4907 2.0 0.010 +25 to +100 0.001 100 0.25 derabl | 1N4907A 2.0 0.020 55 to +100 0.001 100 0.25 erable. 1N4908 4.0 0.096 +25 to +109 0.01 50 022 THERMAL RESISTANCE: 300C/ 1N4908A 4.0 0.198 55 to +10 01 : ceal) iinet 1N4909 40 0.048 +25 to +100 0.005 50 022 W (Typical) junction to lead at | 1N4909A 4.0 0.099 55 to +100 0.005 50 0.22 0.375-inches from body. 1N4910 40 0.019 +25 to +100 0.002 50 0.22 P ITY: Di 1N4910A 4.0 0.040 55 to +100 0.002 50 0.22 Or AR 1 sone f be operated 1N4911 4.0 0.010 +25 to +100 0.001 50 0.22 wi panded end positive |_1N4911A 4.0 0.020 55 to +100 0.001 50 0.22 with respect to the opposite end. 1N4912 75 0.096 +25 to +100 0.01 25 0.20 . 1N4912A 75 0.198 55 to +100 0.01 23 0.20 WEIGHT: 0.2 grams. 1N4913 75 0.048 +25 to +100 0.005 ; . | 1N4913A 75 0.099 55 to +100 0.005 25 0.20 MOUNTING POSITION: Any. 1N4914 75 0.019 +25 to +100 0.002 25 0.20 1N4914A 75 0.040 ~55 to +100 0.002 25 0.20 1N4915 75 0.010 +25 to +100 0.001 25 0.20 1N4915A 75 0.020 55 to +100 0.001 25 0.20 *JEDEC Registered Data. 6-31 1N4896 thru 1N4915A NOTE 1. Nominal voltage for all types is 12.8 Volts +5%. NOTE 2 Referred to as the box measurement method, the AVzr is the maximum voltage variance that will occur as the voltage is scanned thru all temperatures between the temperature range limits. NOTE 3 The effective temperature coefficients are tabulated in %/C pri- marily for information only since temperature compensated diodes inherently have a non-linear voltage-temperature characteristic. NOTE 4 Thedynamic Zener impedance Zzr is derived from the resulting a.c. voltage developed when a 60 eps, rms a.c. current equal to 10% of the D.C. Zener current I, is superimposed on Iz7 NOTE 5 Voltage measurements to be performed 15 seconds after application of DC current. NOTE 6 To specify radiation hardened devices, use RH prefix instead of IN, i.e. RH4896A instead of IN4896A. NOTE 7 Consult factory for TX, TXV or JANS equivalent SCDs. Noise Density (Np) is specified in Microvolts-rms per square root cycle. Actual measurement is performed using a | to3 KHz frequency bandpass at the Zener test current(Iz;) @ 25C ambient temperature. SHIELDED TEST CIRCUIT (LOW NOISE SOURCE) BLOCKING CAPACITOR LoS a fAMPLI- FIER FILTER fo = 2 KHZ BP = 1 to 3KHz TRUE FIGURE 2 NOISE DENSITY MEASUREMENT CIRCUIT 400 300 \ so nN 10 NN RATED POWER DISSIPATION mW T,, Lead temperature (C) 3/8" from body 6.32 FIGURE 3 POWER DERATING CURVE