1
TO-220F
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 500
VDSX 500
Continuous Drain Current ID11
Pulsed Drain Current ID(puls] ±44
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 11
Non-Repetitive EAS 453.9
Maximum Avalanche Energy
Repetitive EAR 6.0
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Max. Power Dissipation PD60
2.16
Operating and Storage Tch +150
Temperature range T stg
Isolation Voltage VISO 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3932-01MR
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=5.5A VGS=10V
ID=5.5A VDS=25V
VCC=300V ID=5.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
µA
nA
Ω
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 2.083
58 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MH
VCC=250V
ID=11A
VGS=10V
IF=11A VGS=0V Tch=25°C
IF=11A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
500
3.0 5.0
25
250
10 100
0.57 0.70
4.5 9.0
950 1425
130 195
6.0 9.0
16 24
6.0 9.0
33 50
5.5 8.3
25 38
10 15
8.0 12
1.10 1.50
650
5.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super F AP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 500V
Note *4
Tc=25°C
Ta=25°C
t=60sec, f=60Hz
=
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Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=4.4A,L=43mH,
VCC=50V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
=
<
=
<
=
<=
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Characteristics
2SK3932-01MR FUJI POWER MOSFET
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 5 10 15 20 25 30 35 40
0
5
10
15
20
25
30
7.0V
20V 10V
8.0V
6.5V
VGS=6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25 V ,Tch=25°C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0 5 10 15 20 25 30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-s tate Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
10V
20V
8.0V
7.0V
6.5V
VGS=6.0V
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resi stance
RDS(on)=f(Tch):ID=5.5A,VGS=10V
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2SK3932-01MR FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C]
0 10203040
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristic s
VGS=f(Qg):ID=11A,Tch=25°C
VGS [V]
400V
250V
Vcc= 100V
10-1 100101102103
100
101
102
103
104
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10-1 100101102
100
101
102
103
Typical Switching Charac t eri s tics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
td(on)
tr
tf td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500 IAS=4.4A
IAS=6.6A
IAS=11A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f (star ti ng Tch):Vcc=50V
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2SK3932-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pu ls e
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25 °C,Vcc=50V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transi ent Ther m al Im pedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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