DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2207 and
CMLT2207G each consist of one isolated 2N2222A
NPN transistor and one complementary isolated
2N2907A PNP transistor, manufactured by the
epitaxial planar process and epoxy molded in an
SOT-563 surface mount package. This PICOmini™
device has been designed for small signal general
purpose amplifier and switching applications.
MAXIMUM RATINGS: (TA=25°C) SYMBOL NPN (Q1) PNP (Q2) UNITS
Collector-Base Voltage VCBO 75 60 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 6.0 5.0 V
Collector Current IC600 mA
Power Dissipation PD350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
CMLT2207
CMLT2207G
SURFACE MOUNT
PICOminiTM
DUAL, COMPLEMENTARY
SILICON TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
NPN (Q1)PNP (Q2)
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO VCB=60V - 10 - - nA
ICBO VCB=50V - - - 10 nA
ICBO VCB=60V, TA=125°C - 10 - - nA
ICBO VCB=50V, TA=125°C - - - 10 nA
IEBO VEB=3.0V - 10 - - nA
ICEV VCE=60V, VEB(OFF)=3.0V - 10 - - nA
ICEV VCE=30V, VEB(OFF)=500mV - - - 50 nA
BVCBO IC=10μA75-60-V
BVCEO IC=10mA 40 - 60 - V
BVEBO IE=10μA 6.0 - 5.0 - V
VCE(SAT) IC=150mA, IB=15mA - 0.3 - 0.4 V
VCE(SAT) IC=500mA, IB=50mA - 1.0 - 1.6 V
VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 - 1.3 V
VBE(SAT) IC=500mA, IB=50mA - 2.0 - 2.6 V
hFE VCE=10V, IC=0.1mA 35 - 75 -
hFE VCE=10V, IC=1.0mA 50 - 100 -
hFE VCE=10V, IC=10mA 75 - 100 -
hFE VCE=10V, IC=150mA 100 300 100 300
hFE VCE=1.0V, IC=150mA 50 - - -
hFE VCE=10V, IC=500mA 40 - 50 -
R2 (6-June 2008)
MARKING CODES:
CMLT2207: L70 CMLT2207G: L7G
• The CMLT2207G is Halogen Free by design.
Central
Semiconductor Corp.
TM
CMLT2207
CMLT2207G
SURFACE MOUNT
PICOminiTM
DUAL, COMPLEMENTARY
SILICON TRANSISTORS
R2 (6-June 2008)
ELECTRICAL CHARACTERISTICS - Continued: NPN (Q1) PNP (Q2)
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
fTVCE=20V, IC=20mA, f=100MHz 300 - - - MHz
fTVCE=20V, IC=50mA, f=100MHz - - 200 - MHz
Cob VCB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF
Cib VEB=0.5V, IC=0, f=1.0MHz - 25 - pF
Cib VEB=2.0V, IC=0, f=1.0MHz - - - 30 pF
hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 - - k Ω
hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 - - k Ω
hre VCE=10V, IC=1.0mA, f=1.0kHz - 8.0 - - x10-4
hre VCE=10V, IC=10mA, f=1.0kHz - 4.0 - - x10-4
hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 - -
hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 - -
hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 - - μS
hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 - - μS
rb'CcVCB=10V, IE=20mA, f=31.8MHz 150 - - ps
NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz - 4.0 - dB
ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - - - 45 ns
tdVCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 10 - 10 ns
trVCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 25 - 40 ns
toff VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 100 ns
tsVCC=30V, IC=150mA, IB1=IB2=15mA - 225 - - ns
tsVCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 80 ns
tfVCC=30V, IC=150mA, IB1=IB2=15mA - 60 - - ns
tfVCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 30 ns
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODES:
CMLT2207: L70
CMLT2207G: L7G
