SD103AWS / 103BWS / 103CWS Vishay Semiconductors Small Signal Schottky Diodes Features * The SD103 series is a metal-on-silicon Schottky barrier device which is protected e3 by a PN junction guard ring. * This diode is also available in the MiniMELF case with the type designations LL103A to LL103C, DO-35 case with the type designations SD103A SD103C and SOD-123 case with type designations SD103AW to SD103CW. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. * For general purpose applications. * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-323 Plastic case Weight: approx. 5.0 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code Marking S6 Remarks SD103AWS SD103AWS-GS18 or SD103AWS-GS08 Tape and Reel SD103BWS SD103BWS-GS18 or SD103BWS-GS08 S7 Tape and Reel SD103CWS SD103CWS-GS18 or SD103CWS-GS08 S8 Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Peak reverse voltage Power dissipation (Infinite heat sink) Single cycle surge 1) 10 s square wave Part Symbol Value Unit SD103AWS VRRM 40 V SD103BWS VRRM 30 V SD103CWS VRRM 20 Ptot 150 IFSM 2 1) V mW A Valid provided that electrodes are kept at ambient temperature Document Number 85682 Rev. 1.4, 15-Jul-05 www.vishay.com 1 SD103AWS / 103BWS / 103CWS Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 6501) C/W Junction temperature Tj 1251) Storage temperature range TS Thermal resistance junction to ambient air 1) - 55 to + 150 C C 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Leakage current Part Symbol Max Unit VR = 30 V SD103AWS IR Min Typ. 5 A VR = 20 V SD103BWS IR 5 A VR = 10 V SD103CWS A IR 5 IF = 20 mA VF 0.37 V IF = 200 mA VF 0.6 V Diode capacitance VR = 0 V, f = 1 MHz Ctot 50 pF Reverse recovery time IF = IR = 50 mA to 200 mA, recover to 0.1 IR trr 10 ns Forward voltage drop 1000 5 100 4 I F - Forward Current ( A ) I F - Forward Current ( mA ) Typical Characteristics (Tamb = 25 C unless otherwise specified) 10 1 0.1 0.01 0 18488 0.2 0.4 0.6 0.8 Figure 1. Typical Variation of Forward Current vs. Forward Voltage www.vishay.com 2 3 2 1 0 1.0 VF - Forward Voltage ( V ) tp = 300 ms duty cycle = 2 % 0 18489 0.5 1.0 1.5 VF - Forward Voltage ( V ) Figure 2. Typical High Current Forward Conduction Curve Document Number 85682 Rev. 1.4, 15-Jul-05 SD103AWS / 103BWS / 103CWS Vishay Semiconductors 1000 I R - Reverse Current ( A ) T amb = 125 C 100 C 100 75 C 10 50 C 25 C 1 0.1 0 10 20 30 40 50 VR - Reverse Voltage ( V ) 18490 Figure 3. Typical Variation of Reverse Current at Various Temperatures C T - Typical Capacitance ( pF ) 100 10 1 0 10 20 30 40 50 VR - Reverse Voltage ( V ) 18491 Figure 4. Typical Capacitance vs. Reverse Voltage VR - Reverse Voltage ( V ) 50 40 100 mA 30 200 mA I F = 400 mA 20 10 0 0 18492 100 200 Tamb - Ambient Temperature ( C ) Figure 5. Blocking Voltage Deration vs. Temperature at Various Average Forward Currents Document Number 85682 Rev. 1.4, 15-Jul-05 www.vishay.com 3 SD103AWS / 103BWS / 103CWS Vishay Semiconductors Package Dimensions in mm (Inches) 1.25 (0.049) max. 0.25 (0.010) min. 0.1 (0.004) max. 0.3 (0.012) 0.15 (0.006) max. Mounting Pad Layout 1.40 (0.055) 1.60 (0.062) 1.95 (0.076) 2.50 (0.098) 2.85 (0.112) Cathode Band ISO Method E 1.60 (0.062) 1.5 (0.059) 0.39 (0.015) 17443 1.1 (0.043) www.vishay.com 4 Document Number 85682 Rev. 1.4, 15-Jul-05 SD103AWS / 103BWS / 103CWS Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85682 Rev. 1.4, 15-Jul-05 www.vishay.com 5