SD103AWS / 103BWS / 103CWS
Document Number 85682
Rev. 1.4, 15-Jul-05
Vishay Semiconductors
www.vishay.com
1
17431
Small Signal Schottky Diodes
Features
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring.
• This diode is also available in the Min-
iMELF case with the type designations LL103A to
LL103C, DO-35 case with the type designations
SD103A SD103C and SOD-123 case with type
designations SD103AW to SD103CW.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing, and coupling diodes for fast switching
and low logic level applications.
• For general purpose applications.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Part Ordering code Marking Remarks
SD103AWS SD103AWS-GS18 or SD103AWS-GS08 S6 Tape and Reel
SD103BWS SD103BWS-GS18 or SD103BWS-GS08 S7 Tape and Reel
SD103CWS SD103CWS-GS18 or SD103CWS-GS08 S8 Tape and Reel
Parameter Test condition Part Symbol Value Unit
Peak reverse voltage SD103AWS VRRM 40 V
SD103BWS VRRM 30 V
SD103CWS VRRM 20 V
Power dissipation
(Infinite heat sink)
Ptot 1501) mW
Single cycle surge 10 µs square wave IFSM 2A
e3
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2
Document Number 85682
Rev. 1.4, 15-Jul-05
SD103AWS / 103BWS / 103CWS
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RthJA 6501) °C/W
Junction temperature Tj1251) °C
Storage temperature range TS- 55 to + 1501) °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Leakage current VR = 30 V SD103AWS IR5µA
VR = 20 V SD103BWS IR5µA
VR = 10 V SD103CWS IR5µA
Forward voltage drop IF = 20 mA VF0.37 V
IF = 200 mA VF0.6 V
Diode capacitance VR = 0 V, f = 1 MHz Ctot 50 pF
Reverse recovery time IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr 10 ns
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
18488
0.01
1000
100
0.1
1
10
0 0.4 0.6 0.8 1.00.2
I - Forward Current ( mA )
F
V
F
- Forward Voltage(V)
Figure 2. Typical High Current Forward Conduction Curve
18489
4
5
3
2
0
1
0.5 1.00 1.5
I - Forward Current ( A )
F
V
F
- Forward Voltage(V)
duty cycle=2%
tp= 300 ms
SD103AWS / 103BWS / 103CWS
Document Number 85682
Rev. 1.4, 15-Jul-05
Vishay Semiconductors
www.vishay.com
3
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
Figure 4. Typical Capacitance vs. Reverse Voltage
Figure 5. Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
V
R
- Reverse Voltage(V)
I - Reverse Current ( µA)
R
18490
100
1000
10
1
0.1 10 20 30 40050
= 125 °CTamb
100 °C
75 °C
50 °C
25 °C
18491
10 20 30 40050
C - Typical Capacitance ( pF )
T
V
R
- Reverse Voltage(V)
100
10
1
T
amb
- Ambient Temperature ( °C)
18492
100 2000
V
R
- Reverse Voltage(V)
30
10
40
20
0
50
= 400 mAIF
100 mA
200 mA
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4
Document Number 85682
Rev. 1.4, 15-Jul-05
SD103AWS / 103BWS / 103CWS
Vishay Semiconductors
Package Dimensions in mm (Inches)
17443
Cathode Band
0.3 (0.012)
2.85 (0.112)
2.50 (0.098)
1.95 (0.076)
1.60 (0.062)
1.1 (0.043)
1.5 (0.059)
0.15 (0.006) max.
1.25 (0.049) max.
0.1 (0.004) max. 0.25 (0.010) min.
1.60 (0.062)
1.40 (0.055)
0.39 (0.015)
ISO Method E
Mounting Pad Layout
SD103AWS / 103BWS / 103CWS
Document Number 85682
Rev. 1.4, 15-Jul-05
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
