2N5027 -3N69 Numerical Index stl > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =|c = = = = TYPE |] & REPLACE. | PAGE | yse | Po S| Ty | Ves | Vee |= hee @ Ic Veesan @ Ie 2 [= {S| MENT | NUMBER & g z #| 18] 2/8 z\)o @ 25C | B] C | (wolts) | (voits) |S | (min) (max) S| (valts) a 3 5/2 2N5027 S{N MSS 320M JA 120 30 |0 50 150; 150M 0.45 150M 2N5028 SIN MSS 320M JA 120 30 {O | 100 300) 150M 0.45 150M 2N5029 S IN HSS 320M JA 120 15 40 40 129 LOM 0.25 LOM 2N5030 S|N HSS 320M |A 129 12 Jo 30 10M 0.25 LOM 2N5034 S |N LPA 83W {Cc 150 55 45 {R 20 70] 2.5A 2.5 6.0A 15 E 2N5035 S JN LPA 83W 1 C 150 55 45 |[R 20 70] 3.0A 3.0 0A 15 E 2N5036 S JN LPA 83W Cc 150 70 60 FR 20 70) 2.548 2.5 6.0A i5 E 2N5037 Ss [N LPA 83W TC 150 70 60 |R 20 70) 3.0A 3.0 8.0A 15 E 2N5043 GP 30M |A 125 15 7.0 40 150] 3.0M 2N5044 GIP 30M |A 125 15 7.0 10 150) 3.0M 2N5045 thru Field Effect Transistors, see Table on Page 1-166 2N5047 2N5050 Ss ]N LPA 40W )C 200 120 }0 35 105) O.5A 0.9 Q.5A 20M] T 2N5051 S }N LPA 40W 1C 200 150 |0 35 105} O.5A 0.9 0.54 20Mi T 2N5052 Ss |N LPA 4OW fC 200 200 |0 35 105) 0,5A 0.9 O.5A 20M; T 2N5055 S |[P HSS 200M [A 125 12 12 [0 30 100 30M 0.13 1.0M 2N5056 [S [P HSS | 360M JA | 200} 15 15 }O0 7 30 {4 100] 30M 0.13 1.0M 2N5057 S]|P HSS 360M {A 200 15 15 ]0 40 100 30M 0.13 1.0M 2N5058 S |N 1.0W }C 200; 300 300 |0 35 150 30M 2N5059 5 ]N 1.0W Cc 200) 250 250 70 30 150 30M 2N5060 : thru Thyristors, see Table on Page 1-154 2N5063 2N5067 S|N 7-192 LPA |87.5W |C | 200 40 40 {0 20 80 1.0A 0.4 1.0A 20 JE 4. OMT 2N5068 S |N 7-192 LPA |87.5W {C |200 60 60 }O 20 80 1.0A 0.4 1L.0A 20 |E 4.0M/T 2N5069 |S |N 7-192 | LPA }87.5wW }C | 200 80 80 |O } 20] 80 1.04 0.4) 1.0A] 20 JE 4.0M|T 2N5086 S |P 5-55 LNA 310M |A [135 50 50 |O {150 |500 0.1M 0.3 LOM] 150 |E 40M] T 2N5087 S{P 5-55 LNA 310M JA |135 50 50 10 |250 | 800 O.1M 0.3 LOM} 250 /E 40M] T 2N5088 S IN 5-59 LNA 310M {A 1135 35 30 10 1300 1900 O.iM Q.5 LOM] 350 [E 50M|T 2N5089 Ss |N 5-59 LNA 310M JA {135 30 25 |O {400 [1200 0.1M 0.5 10M] 450 JE 50M|T 2N5126 Ss |N AFC 200M |A $125 20 20 |0 20 |350 4M 2.0 10M 15 |E 2N5127 S |N AFC 200M |A |125 20 12 |0 15 }300 2M 0.3 10M 12 JE 2N5128 SN AFA 200M JA }125 15 12 40 35 | 350 50M. 0.25 150M 2N5129 S |N AFA 300M {A |125 15 12 JO 35 |350 50M 0.25 150M 2N5130 S|N AFC 200M |A [125 30 12 10 15 | 250 8M 0.6 10M 12 |E 2N5131 S yjN AFC 200M JA }125 20 15 ]0 30 }500 10M 1.0 10M 25 /E 2N5132 SN AFC 200M JA |125 20 20 [oO 30 | 400 10M 2.0 10M 20 7E 2N5133 S [N AFC 200M {A |125 20 18 JO 60 {1000 1. 0.4 1.0M 50 {Ez 2N5134 S [N HSS 200M |A 1125 20 LO |O 20 4150 LOM 0.2 LOM 2N5135 S }N AFA 300M JA |125 30 25 {0 50 [600 10M 1.0 LOOM 2N5136 |S |N AFA | 220M |A |125 30 20 fO | 20 |400 150M| 0.25 150M 2N5137 S [N AFA 300M {A 125 30 20 |0 20 |400 150M 0.25 150M 2N5138 STP AFC 200M JA |125 30 30 |0 50 | 800 100* 0.3 10M 40 |E 2N5139 Ss |P HSS 200M |A 1125 20 20 [0 40 1. OM 0.15 1.0M 2N5140 Ss |P HSS 200M |A {125 5.0 5.0 JO 20 |140 10M 0.2 LOM 2N5 141 Ss [P HSS 200M 7A 1125 6.90 6.0 | 30 30M a2 LOM 2N5142 Ss }P HSS 300M {A {125 20 20 JO 30 50M 0.5 50M 2N5143 S]P HSS 200M |A [125 20 20 10 30 50M 0.5 50M 2N5190 (1S |N LPA 40W 7c 1150 40 |0 25 100 O.5A 0.6 LOA 4, 0M) T 2N5191 STN LPA 40W {Cc {150 60 |O0 25 100 O.5A 0.6 1.0A 4.0M/T 2N5192 S |N LPA 40w |c 1150 80 [0 25 100 O.5A 0.6 1.0A 4.0M|T 2N5193 SP LPA 40W |C |150 40 }0 25 100 1.5A 0.6 1.5A 4.0M|T 2N5194 5 |P LPA 40W |C }150 60 |0 25 100 1.54 0.6 1.5A 4.0M|T 2N5195 S ];P LPA 40w |C |150 80 |0 25 100 1.54 0.6 1.5A 4,0M|T 3N22 N RFA 85 15 0.96) B 3N34 SIN 125M 30 3N35 S|[N 125M 30 30 }O 251E 3N35A S|[N 125M 30 30 |0 1OJE 3N39 thru Reference Amplifiers, see Table on Page 1-172 3N44 3N45 G|P PMS 75W jC |100 60 35 30 1120 5.0A 0.4 5.0A 30 JE 600K) 3N46 GP PMS 75W JC 7100 80 50 20 | 80 5.0A 0.4) 5.0A 300K] 3N47 G/P PMS 75W |C 100 40 25 30 |120 5.0A 0.4 5.0A 30 JE 500K 3N48 GIP PMS 75w {Cc {100 60 40 20 80 5.0A 0.4 5.04 300K 3N49 GUP PMS 94wW |C 1100 60 35 30 1120 5.0A 0.4 5.0A 30 {E 600K| 3N50 GP PMS 94W 7C |100 80 50 20 80 5.0A 0.4 5.0A 300K) 3N51 GIP PMS 94W 1C {100 40 25 30 |120 5..0A 0.4 5.0A 30 [E 500K 3N38 G iP PMS 94W | C |100 60 40 20 80 5.0A 0.4 5.0A 300K 3N thru Thyristors, see Table on Page 1-154 3N60 3N62 Ss |N CHP 10 Vort = 200 nV 3N63 S |N CHP 10 Vore 100 pV 3N64 S 4N CHP 10 Vogee 50 pv 3N65 S |N CHP Vore 200 pV 3N66 SIN CHP Vogem 100 pV 3N67 SN CHP Voeg= 50 uv 3N68 S|N CHP 10 Vort 200 uv 3N68A S |N 100M ]A |200 10 3N69 S JN CHP 10 off 100 pv 1-150Power Transistors SILICON POWER TRANSISTOR SELECTOR GUIDE (continued) Type Veto hee @ Ne Voce sat) @ Ne & \y - PNP Volts (Max) Min/Max Amp Volts (Mex) Amp | Amp 3.0 AMP (Timay = 200C) a Lo: 01 he O21 oS 6,15 Po = 6.0W : 1.5. 0.48 fr 3.0 MHz Go noe 0.195. *7 60 MHz : 0.6" 1,0: 0,325 80. Au O26 0.6 100 6.4125 Case 31 40 30/150 0.25 0.6 1.0 0.1 Solid Header 2N4238 60 30/150 0.25 0.6 1.0 0.1 , 2N4239 80 30/150 0.25 0.6 1.0 0.1 4.0 AMP (Tomax) = 200C) Po =10W | I J Case 31 tf; 4.0 MHz 2N4877 60 20/100 4.0 1.0 4.0 0.4 (T0-5) Pp =20W 2N3054* 60 25/100 0.5 1.0 0.5 0. 05 tf; 10 MHz 2N3766 60 40/160 0.5 1.0 0.5 0. 05 2N3767 80 40/160 0.5 1,0 0.5 0.05 : 0.280 0.8" 1,0 0.125 Pp = 25W 2b: . . : 16 *f 1.0 MHz gk : : st f 3.0 MHz ONag00. 1b 20/100. O68. : Te: . by ont, 4.0 MHz BO i af A0 : Case 80 re 2N4910 40 20/100 0.8 0.6 1,0 0.4 (10-66) 2N4911 60 20/100 O.5 0.6 1.0 0.1 2N4912 80 20/100 .5 0.6 1.0 0.1 MJ4101** 40 25/100 1.5 1,0 1.5 0,15 2N4231 40 25/100 1.5 0.7 1.5 0.15 = 35 . Po = 2 He 2N4232 60 25/100 1.5 0.7 1.5 0,15 mT" 2N4233 | 80 25/100 1.5 0.7 1.5 0.15 5.0 AMP (Tacmax) = 200C) o2N4905 Pp = 87.5W 5 -2N4006 f+ 4.0 MHz Case 11 r 2N4913 40 25/100 2.5 1.0 2.5 0.25 . 2N4914 60 25/100 2.5 1.0 2.5 0.25 2N4915 80 25/100 2.5 1.0 2.5 0.25 2N5067 40 20/80 1.0 0.4 1.0 O.1 2N5068 60 20/80 1.0 0.4 1,0 0.1 2N5069 80 20/80 1.0 0.4 1.0} 9.3 Pp=li7Ww 2N1724 80 20/90 2.0 1.0 2.0 0.2 - fy 10 MHz 2N1725 80 50/150 2.0 1,0 2.0 0.2 Case 9 (T0-61) 7.5 AMP (Tucan = 200C) 2N3445 60 20/60 3.9 1.5 3.0 0.3 Pp = 115 W 2N3446 80 20/60 3.0 1.5 3,0 0.3 f- 10 MHz 2N3447 60 40/120 3.0 1.5 5.0 0.5 Case 11 2N3448 80 40/120 5.0 1.5 5.0 0.5 (T0-3) Pp =117W fy 1.0 MHz 2N3232 60 15/75 3.0 2.5 3.0 0.2 Case l (70-3) 2N3487 60 20/60 3.0 1.2 3.0 0.3 2N3488 80 20/60 3.0 1,2 3.0 0.3 Po = 117W 2N3489 100 15/45 3.0 1.2 3.0 0.3 fr 10 MHz 2N3490 60 40/120 5.0 1.0 3.0 0.3 Case 9 2N3491 80 40/120 5.0 1.0 3.0 0.3 (70-61) 2N3492 100 30/90 5.0 1.0 3.0 0.3 II\QQKL},]} WN A QGV,. WC X DK QQ) WW Ql |'"M)NWWWWWD oe F AGDA nz i|I\){Power Transistors 2N5067 (siticon) Veso = 40-80 V = 2n5068 P, = 87.5 W 2n5069 NPN power transistors for use in power amplifier and switching circuits. Complement to PNP 2N4901 CASE 11 thru 2N4903. (TO-3) MAXIMUM RATINGS Rating Symbol [2N5067/2N50682N5069 ~Unit Collector-Emitter Voltage Voro 40 60 80 Vde Collector-Base Voltage Vos 40 60 80 Vde Emitter-Base Voltage Vis 5.0 Vdc Collector Current Continuous In 5.0 Adc Base Current - Continuous I 1.0 Adc Total Device Dissipation @T, = 25C Py 87.5 Watts Derate above 25C 0.5 w/c Operating & Storage Junction T,, T -65 to +200 c J "stg Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case 950 2.0 C/W ELECTRICAL CHARACTERISTICS = 25C unless otherwise noted) | Characteristic | Fig. No. | Symbol Min [ Max | Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* BV * Vde (Ig = 0.2 Ade, Ty, = 9) 2N5067 CEO(sus) 40 - 2N5068 11 60 - 2N5069 80 - Collector Cutoff Current loEO mAdec (Vog = Rated Vogo Ip = 9 - 1.0 Collector Cutoff Current lorx mAdc (og = Rated Vong Vepiott) = 1.5 Vde) - 1.0 = = = - Vor = Rated Vocro VEB(oft) =1.5 vde,T, 150C) 5,6 2.0 Collector Cutoff Current logo mAdc (Yop = Rated Yop, Tp = 9) 5,6 - 1.0 Emitter Cutoff Current Iepo mAdc (Veg = 5.0 Vde, 1, = 0) - 1.0 7-192Power Transistors 2N5067, 2N5068, 2N5069 (continued) hee, DC CURRENT GAIN, NORMALIZED Veg, COLLECTOR-EMITTER VOLTAGE (VOLTS) ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic | Fig. No. | Symbol! | Min { Max | Unit | ON CHARACTERISTICS DC Current Gain* (Ig = 1.0 Ade, V (I, = 5.0 Ade, h * = 2.0 Vde) 1 FE 20 80 = 2.0 Vde) 7.0 - CE Vo Collector-Emitter Saturation Voltage* v * (I, = 1.0 Adc, I, = 0.1 Adc) 2,3,4 CE(sat) - 0.4 {I,, = 5.0 Adc, I, = 1.0 Adc) - 1.5 Vde Base-Emitter On Voltage* v * Vde (Ig = 1.0Ade, Vag = 2.0 Vde) 3,4 BE(on) - 1.2 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product f, MHz (ig = 1,0 Ade, V.,, = 10 Vde, f = 1.0 MHz) 4.0 - Small-Signal Current Gain h, - (ig = 500 mAde, Vag = 10 Vde, f = 1.0 KHz) fe 20 - * Pulse Test, PW ~300 ns, Duty Cycle = 2.0% FIGURE 1 NORMALIZED DC CURRENT GAIN 10 710 YT = 175C 50 Ty = 25C 3.0 20 10 07 05 03 02 01 0.005 0.007 0.01 0.02 0.03 005 46007) Ot 0.2 03 05 0? 10 20 3.0 5.0 te, COLLECTOR CURRENT (AMP) FIGURE 2 COLLECTOR SATURATION REGION 20 16 08 04 a 0.05 0.07 0.1 02 03 05 07 10 20 30 0 70 10 2 (0 50 70 100 200 300 = 500 ly, GASE CURRENT (mA) 7-193Power Transistors 2N5067, 2N5068, 2N5069 (continued) FIGURE 3 ON VOLTAGES FIGURE 4 TEMPERATURE COEFFICIENTS 2.0 +25 *APPLIES FOR Io/lghee/2 s +20 Ty = 58C to +175C 16 o4 = et 2 3 12 = * Oy for Veg {sat} 3 8 0 2 08 Vee (sat) @ 5 o =. ; Voejsat) @ le/la = s_ 0 _ 0.005 6.01 0.020.03 0.05 0.1 0203 05 10 20 3.0 50 0.005 0.01 0.02003 0605 0.1 0203 05 10 20 3.0 50 Ic, COLLECTOR CURRENT (AMP) Ie, COLLECTOR CURRENT (AMP) TYPICAL OFF REGION CHARACTERISTICS FIGURE 5 CUT-OFF REGION FIGURE 6 EFFECTS OF BASE-EMITTER RESISTANCE 10? 10 Voe = 30 a > = 2X Ices Ss wn le = Ices _ o = Ic, COLLECTOR CURRENT (yA) 3S (TYPICAL Ices VALUES Ree, EXTERNAL BASE-EMITTER RESISTANCE (OHMS) FORWARD 10 FROM FIGURE 5) 10 Wat 10 oA 02 0 0.2 04 0.6 0 2 40 60 80 100 120 140 160 180 200 Vee, BASE-EMITTER VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) FIGURE 7 SWITCHING TIME EQUIVALENT CIRCUIT FIGURE 8 CAPACITANCE 300 approx TURNONPULSE Ty = 425C +11 200 Vn fe - V SCOPE = Veatott) = a et = 100 APPROX mal tp Cie << Cop S +N 1 th <7.0ns = 4 10 <t, < 500 ps A0 Vie ToT pl th < lins 50 ( I DUTY CYCLE =~ 2.0% tz = APPROX 9.0 30 TURN-OFF PULSE O1 02 05 #10 20 50 10 2 50 Vp. REVERSE VOLTAGE (VOLTS) 7-194Power Transistors 2N5067, 2N5068, 2N5069 (continued) FIGURE 9 TURN-ON TIME FIGURE 10 TURN-OFF TIME 20 20 , In! to lolly = 10 4 iclly = 10 z Ty = 25C 10 R= Mt 07 @ Vcc = 30V 07 Ty = 25C 05 05 a a > 03 z wy Voc = 10 = 3 = 02 = 02 OL @ Verto) = 2.0V Oo 0.07 0.07 0.05 0.05 0.03 0.03 . 0.02 0.05 0.07 0.1 02 03 05 07 10 20 3.0 50 0.05 0.07 0.1 02 03 05 6.7 10 20 30 50 Ie, COLLECTOR CURRENT (AMP) fe, COLLECTOR CURRENT (AMP) RATING AND THERMAL DATA FIGURE 11 ACTIVE-REGION SAFE OPERATING AREAS 10 7.0 100 5.0 ms There are two limitations on the power han- a dling ability of a transistor: junction temperature = 30 and secondary breakdown. Safe operating area = 00 T= curves indicate lc Vce limits of the transistor that = SECONDARY BREAKDOWN must be observed for reliable operation; i.e., the 3 = - BONDING WIRE LIMITED transistor must not be subjected to greater dissi- wz 10 CURVES APPLY BELOW pation than the curves indicate. 5 07 RATED The data of Figurellis based on Tajpt) = 3 05 200C; Tc is variable depending on conditions. 8 Pulse curves are valid for duty cycles to 10% pro- 8 93 vided Tyjpt) = 200C. Tyipiy may be calculated from the data in Figure 12 .At high case tempera- 0.2 tures, thermal limitations will reduce the power that can be handled to values less than the 01 limitations imposed by secondary breakdown. 20 30 50 70 10 20 (30 50 70 100 Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) = FIGURE 12 TRANSIENT THERMAL RESISTANCE 2 ee 2 HD oH wa 2 a c(t, D) TRANSIENT THERMAL RESISTANCE, NORMALIZED 1 6.01 0.02 0.03 0.05007 O1 62 03 05 O7 10 20 30 560 70 10 20 85070100 200 300 = 500 700 1000 t, TIME (ms) DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA FIGURE A A train of periodical power pulses can be represented by the model as shown in Figure A. Using the model and the device thermal reponse, te the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. Pp Pp To find @c(t), multiply the value obtained from Figure 12 by the steady state value 9c. Example: The 2N5067 is dissipating 100 watts under the following conditions: t=O.lms,tpe=O5ms. (D = 0.2) Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading DUTY CYCLE d=tt=ze of r (t1,D )is 0.28. The peak rise in junction temperature is therefore OT = r(t) X Pe X Gc = 0.28 X 100 x 2.0 = 56C | | PEAK PULSE POWER = Pp 7-195