APTGF50X60T3G
APTGF50X60T3G – Rev 0 July, 2007
www.microsemi.com 1-6
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
TC = 25°C 65
IC Continuous Collector Current TC = 80°C 50 *
ICM Pulsed Collector Current TC = 25°C 230
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 250 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 100A @ 500V
* Specification of IGBT device but output current must be limited to 40A at Tc=80°C not to exceed a connectors
temperature greater than 120°C.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
31
14
R1
13
2
28
25
23
15
20
16
19
10
18 22
30
29
3
4
8
7
11
12
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
VCES = 600V
IC = 50A* @ Tc = 80°C
Application
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
3 Phase bridge
N
PT IGBT Power Module
APTGF50X60T3G
APTGF50X60T3G – Rev 0 July, 2007
www.microsemi.com 2-6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 250
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 600V Tj = 125°C 500
µA
Tj = 25°C 1.7 2.0 2.45
VCE(sat) Collector Emitter Saturation Voltage VGE =15V
IC = 50A Tj = 125°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1mA 4 6 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 2200
Coes Output Capacitance 323
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 200
pF
Qg Total gate Charge 166
Qge Gate – Emitter Charge 20
Qgc Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 50A 100
nC
Td(on) Turn-on Delay Time 40
Tr Rise Time 9
Td(off) Turn-off Delay Time 120
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω 12
ns
Td(on) Turn-on Delay Time 42
Tr Rise Time 10
Td(off) Turn-off Delay Time 130
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω 21
ns
Eon Turn-on Switching Energy Tj = 125°C 0.5
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω Tj = 125°C 1
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 25
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 30 A
IF = 30A 1.8 2.2
IF = 60A 2.2
VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.5
V
Tj = 25°C 25
trr Reverse Recovery Time
Tj = 125°C 160
ns
Tj = 25°C 35
Qrr Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C 480 nC
APTGF50X60T3G
APTGF50X60T3G – Rev 0 July, 2007
www.microsemi.com 3-6
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.5
RthJC Junction to Case Thermal Resistance Diode 1.2
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTGF50X60T3G
APTGF50X60T3G – Rev 0 July, 2007
www.microsemi.com 4-6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
01234
Ic, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
012345678910
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=25A
0
1
2
3
4
5
6
7
8
6 8 10 12 14 16
VGE, Gate to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle Ic=100A
Ic=50A
Ic=25A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
Collector to Emitter Breakdown
Voltage (Normalized)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE=480V
0
2
4
6
8
10
12
14
16
18
0 25 50 75 100 125 150 175 200
Gate Charge (nC)
V
GE, Gate to Emitter Voltage (V)
IC = 50A
TJ = 25°C
Output Characteristics (VGE=10V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
01234
Ic, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
APTGF50X60T3G
APTGF50X60T3G – Rev 0 July, 2007
www.microsemi.com 5-6
VGE = 15V
20
30
40
50
60
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
Tj = 125°C
VCE = 400V
RG = 2.7Ω
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
75
100
125
150
175
200
025 50 75 100 125 150
ICE, Collector to Emitter Current (A)
td(off), Turn-Off Delay Time (ns)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 2.7Ω
VGE=15V,
TJ=125°C
0
10
20
30
40
50
60
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
tr, Rise Time (ns)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.7Ω
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
60
0 255075100125150
ICE, Collector to Emitter Current (A)
tf, Fall Time (ns)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.7Ω
TJ=125°C,
VGE=15V
0
0.5
1
1.5
2
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Eon, Turn-On Energy Loss (mJ)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 2.7Ω
TJ = 125°C
0
0.5
1
1.5
2
2.5
0 255075100125150
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.7Ω
Eon, 50A
Eon, 50A
Eoff, 50A
0
0.5
1
1.5
2
2.5
3
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
Switching Energy Losses (mJ)
VCE = 400V
VGE = 15V
TJ= 125°C
0
20
40
60
80
100
120
0 200 400 600
IC, Collector Current (A)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
APTGF50X60T3G
APTGF50X60T3G – Rev 0 July, 2007
www.microsemi.com 6-6
Cies
Cres
Coes
100
1000
10000
0 1020304050
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
hard
switching
0
40
80
120
160
200
240
020406080100
I
C
, Collector Current (A)
F
max
, Operating Frequency (kHz)
V
CE
= 400V
D = 50%
R
G
= 2.7Ω
T
J
= 125°C
T
C
= 75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
