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c 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.C
Power transistor (60V, 3A)
2SA2071
Features Dimensions (Unit : mm)
1) High speed switching. (Tf : Typ. : 20ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2A)
3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SC5824
Applications
Low Frequency Amplifier
High speed switching
Structure
PNP Silicon epitaxial planar transistor
Packaging specifications
2SA2071
T100
1000
Type Package
Code Taping
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
−60
−60
−6
−3
500
2.0
150
−55 to +150
−6
∗
Unit
V
V
V
A
A
mW
°C
°C
W
∗
∗1 Pw=100ms
∗2 Mounted on a 40×40×0.7 (mm) ceramic substrate
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
MPT3
Each lead has same dimensions
Abbreviated symbol : UN
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)