SPD06N80C3
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -785 -pF
Output capacitance Coss -33 -
Effective output capacitance, energy
related6) Co(er) -26 -
Effective output capacitance, time
related7) Co(tr) -69 -
Turn-on delay time td(on) -25 -ns
Rise time tr-15 -
Turn-off delay time td(off) -72 -
Fall time tf-8-
Gate Charge Characteristics
Gate to source charge Qgs -4-nC
Gate to drain charge Qgd -15 -
Gate charge total Qg-31 41
Gate plateau voltage Vplateau -5.5 -V
Diode forward voltage VSD VGS=0 V, IF=IS=6 A,
Tj=25 °C -11.2 V
Reverse recovery time trr -520 -ns
Reverse recovery charge Qrr -5-µC
Peak reverse recovery current Irrm -18 -A
1) J-STD20 and JESD22
2) Pulse width tp limited by Tj,max
6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
C
is a fixed capacitance that gives the same charging time as C
while V
is rising from 0 to 80% V
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=0/10 V, ID=6 A,
RG=15 ?, Tj
VDD=640 V, ID=6 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
4) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
VR=400 V, IF=IS=6 A,
diF/dt=100 A/µs
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
Rev. 2.91 page 3 2011-09-27