MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. 8 AMPERE PCP SILICON POWER TRANSISTORS 300-350-400 VOLTS 80 WATTS Features * * * * * * * * * Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn-Off Times 100 ns Inductive Fall Time @ 25_C (Typ) 125 ns Inductive Crossover Time @ 25C (Typ) Operating Temperature Range -65 to + 150_C 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents Pb-Free Packages are Available* MARKING DIAGRAM MJE585xG AY WW 1 2 TO-220AB CASE 221A-09 STYLE 1 3 MJE585x = G A Y WW = = = = Device Code x = 0, 1, or 2 Pb-Free Package Assembly Location Year Work Week ORDERING INFORMATION *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 5 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MJE5850/D MJE5850, MJE5851, MJE5852 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIII IIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIII IIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Symbol MJE5850 MJE5851 MJE5852 Unit Collector-Emitter Voltage Rating VCEO(sus) 300 350 400 Vdc Collector-Emitter Voltage VCEV 350 400 450 Vdc Emitter Base Voltage VEB 6.0 Vdc Collector Current - Continuous - Peak (Note 1) IC ICM 8.0 16 Adc Base Current - Continuous - Peak (Note 1) IB IBM 4.0 8.0 Adc PD 80 0.640 W W/_C TJ, Tstg - 65 to 150 _C Symbol Max Unit RqJC 1.25 _C/W TL 275 _C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction-to-Case Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. ORDERING INFORMATION Device MJE5850 MJE5850G MJE5851 MJE5851G MJE5852 MJE5852G Package Shipping TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) http://onsemi.com 2 50 Units / Rail MJE5850, MJE5851, MJE5852 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max VCEO(sus) 300 350 400 - - - - - - - - 0.5 2.5 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0) MJE5850 MJE5851 MJE5852 Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 W, TC = 100_C) ICER - - 3.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO - - 1.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with base reverse biased IS/b See Figure 12 RBSOA See Figure 13 ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 2.0 Adc, VCE = 5 Vdc) (IC = 5.0 Adc, VCE = 5 Vdc) hFE - 15 5 - - - - - - - - - - 2.0 5.0 2.5 - - - - 1.5 1.5 Cob - 270 - pF (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, tp = 50 ms, Duty Cycle v 2%) td - 0.025 0.1 ms tr - 0.100 0.5 ms (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle v 2%) ts - 0.60 2.0 ms tf - 0.11 0.5 ms tsv - 0.8 3.0 ms tc - 0.4 1.5 ms tfi - 0.1 - ms tsv - 0.5 - ms tc - 0.125 - ms tfi - 0.1 - ms Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 8.0 Adc, IB = 3.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VCE(sat) Base-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time Fall Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 100_C) Storage Time Crossover Time Fall Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 25_C) 2. Pulse Test: PW = 300 ms. Duty Cycle v 2% http://onsemi.com 3 MJE5850, MJE5851, MJE5852 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 200 TJ = 150C hFE , DC CURRENT GAIN 100 70 50 TJ = 25C 30 20 VCE = 5 V 10 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) 5.0 7.0 10 2.0 1.6 IC = 0.25 A 1.2 TJ = 25C 0.4 0 0.01 0.02 1.6 1.6 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 IC/IB = 4 1.2 TJ = 150C TJ = 25C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.8 10 TJ = 25C TJ = 150C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Voltage 10 3000 2000 TJ = 25C 104 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (nA) 5.0 1.2 0 0.1 10 105 TJ = 150C 103 100C 102 101 REVERSE FORWARD VCE = 200 V +0.2 +0.1 1000 Cib 500 Cob 200 100 50 25C 100 2.0 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMPS) IC/IB = 4 0.4 0.4 0.2 0.3 0.05 Figure 2. Collector Saturation Region 2.0 0 0.1 5.0 A 0.8 Figure 1. DC Current Gain 0.8 2.5 A 1.0 A 0 -0.1 -0.2 -0.3 -0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 30 0.1 0.2 -0.5 0.5 1.0 5.0 10 20 50 100 200 500 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Figure 5. Collector Cutoff Region http://onsemi.com 4 MJE5850, MJE5851, MJE5852 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING +V 50 mF + 0.0025 mF -10 V 0.2 mF 1 INPUT CONDITIONS 20 0.1 mF INPUT +V 0 PW Varied to Attain IC = 100 mA 1W2 MJE15028W 0.1 mF 500 W 1/2 W CIRCUIT VALUES Lcoil = 180 mH Rcoil = 0.05 W VCC = 20 V TEST CIRCUITS IN PUT SEE ABOVE FOR DETAILED CONDITIONS 1N4937 OR EQUIVALENT Vclamp 2 TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. + -V VCC = 250 V RL = 62 W Pulse Width = 10 ms Vclamp = 250 V RB adjusted to attain desired IB1 OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC IC TUT IB1 adjusted to obtain the forced hFE desired 50 mF -V adjusted to obtain desired IB1 + V adjusted to obtain desired VBE(off) 1 IB1 1 - INDUCTIVE TEST CIRCUIT 2 1N4934 0.2 mF Lcoil = 80 mH, VCC = 10 V Rcoil = 0.7 W 1 0.0033 mF 500 W 1/2 W 50 W 2W TURN-ON TIME 1/2 W 500 W 1/2 W 0 2 0.1 mF MJE15029 500 W Rcoil ICM tf Clamped t Lcoil t1 tf t1 t2 VCC VCE VCEM RS = 0.1 W Vclamp t TIM E t2 Lcoil (ICM) TUT VCC RL 1 Lcoil (ICM) 2 VCC VClamp Test Equipment Scope -- Tektronix 475 or Equivalent 1.0 3.0 IC = 4 A IC/IB = 4 TJ = 25C 10% 2% ICM ICM tc tfi VCE tsr trv tti IC 90% ICM ICM VCEM t c , CROSSOVER TIME (s) IB 10% 90% IB1 VCEM 0.8 2.7 2.4 2.1 tsv 100C 0.6 1.8 tsv 25C 1.5 0.4 1.2 0.9 0.2 0.6 tc 25C Vclamp 0.3 0 TIME 0 1 2 3 4 5 6 7 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 7. Inductive Switching Measurements Figure 8. Inductive Switching Times http://onsemi.com 5 8 0 t sv, VOLTAGE STORAGE TIME (s) tc 100C MJE5850, MJE5851, MJE5852 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 -90% VCEM tfi = Current Fall Time, 90-10% ICM tti = Current Tail, 10-2% ICM tc = Crossover Time,10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is shown in Figure 7 to aid on the visual identity of these terms. 1.0 0.7 0.5 For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222A: PSWT = 1/2 VCCIC(tc)f In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. 10 VCC = 250 V IC/IB = 4 TJ = 25C 0.3 0.7 ts t, TIME (s) t, TIME (s) 0.2 tr 0.1 0.07 0.05 0.4 VCC = 250 V IC/IB = 4 VBE(off) = 5 V TJ = 25C 0.3 0.2 0.03 td 0.02 tf r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.01 0.1 1 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.3 0.5 0.7 1.0 2.0 4.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. Turn-On Switching Times Figure 10. Turn-Off Switching Time D = 0.5 0.3 0.2 0.2 0.1 ZqJC(t) = r(t) RqJC RqJC = 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.1 0.07 0.05 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 Figure 11. Typical Thermal Response [ZqJC(t)] http://onsemi.com 6 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1k MJE5850, MJE5851, MJE5852 SAFE OPERATING AREA INFORMATION The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) 20 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 15. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 10 5.0 5 ms 2.0 TC = 25C 1.0 1 ms dc 0.5 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMITMJE5850 MJE5851 MJE5852 200 300 400 500 20 40 70 100 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.2 0.1 0.05 0.02 Figure 12. Maximum Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 8.0 REVERSE BIAS 7.0 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics. IC/IB = 4 VBE(off) = 2 V to 8 V TJ = 100C 6.0 5.0 4.0 MJE5850 MJE5851 MJE5852 3.0 2.0 1.0 0 100 300 200 500 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. RBSOA, Maximum Reverse Bias Safe Operating Area 3.5 1 IB2(pk) (AMPS) POWER DERATING FACTOR IC = 4 A IB1 = 1 A TJ = 25C 3.0 2.5 2.0 1.5 1.0 0 2 4 6 0.6 THERMAL DERATING 0.4 0.2 0 8 SECOND BREAKDOWN DERATING 0.8 20 40 60 80 100 120 140 VBE(off), BASE-EMITTER VOLTAGE (VOLTS) TC, CASE TEMPERATURE (C) Figure 14. Peak Reverse Base Current Figure 15. Forward Bias Power Derating http://onsemi.com 7 160 MJE5850, MJE5851, MJE5852 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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