MJE5852G - ON Semiconductor - Datasheet.Directory

October, 2011 − Rev. 5

1Publication Order Number:

MJE5850/D

MJE5850, MJE5851,

MJE5852

SWITCHMODE Series

PNP Silicon Power

Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed

for high−voltage, high−speed, power switching in inductive circuits

where fall time is critical. They are particularly suited for line operated

SWITCHMODE applications.

Features

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

•Fast Turn−Off Times

♦100 ns Inductive Fall Time @ 25_C (Typ)

♦125 ns Inductive Crossover Time @ 25°C (Typ)

•Operating Temperature Range −65 to +150_C

•100_C Performance Specified for:

♦Reversed Biased SOA with Inductive Loads

♦Switching Times with Inductive Loads

♦Saturation Voltages

♦Leakage Currents

•Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

8 AMPERE

PCP SILICON

POWER TRANSISTORS

300−350−400 VOLTS

80 WATTS

TO−220AB

CASE 221A−09

STYLE 1

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MARKING

DIAGRAM

MJE585x = Device Code

x = 0, 1, or 2

G= Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MJE585xG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

MJE5850, MJE5851, MJE5852

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

MJE5850

ÎÎÎÎ

MJE5851

ÎÎÎÎ

MJE5852

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

300

ÎÎÎÎ

350

ÎÎÎÎ

400

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎÎÎ

VCEV

ÎÎÎÎÎ

350

ÎÎÎÎ

400

ÎÎÎÎ

450

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎÎÎ

6.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous

− Peak (Note 1)

ÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎÎÎÎ

8.0

1 6

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current − Continuous

− Peak (Note 1)

ÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎÎÎÎ

4.0

8.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25_C

Derate above 25_C

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

0.640

ÎÎÎ

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎ

– 65 to 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎÎÎ

RqJC

ÎÎÎÎÎÎÎÎÎÎÎ

1.25

ÎÎÎ

_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes: 1/8″ from

Case for 5 Seconds

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

275

ÎÎÎ

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

ORDERING INFORMATION

Device Package Shipping

MJE5850 TO−220

50 Units / Rail

MJE5850G TO−220

(Pb−Free)

MJE5851 TO−220

MJE5851G TO−220

(Pb−Free)

MJE5852 TO−220

MJE5852G TO−220

(Pb−Free)

MJE5850, MJE5851, MJE5852

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage MJE5850

(IC = 10 mA, IB = 0) MJE5851

MJE5852

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

300

350

400

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

0.5

2.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 W, TC = 100_C)

ÎÎÎÎÎ

ICER

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

3.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with base forward biased

ÎÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎÎ

See Figure 12

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with base reverse biased

ÎÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎÎ

See Figure 13

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 2.0 Adc, VCE = 5 Vdc)

(IC = 5.0 Adc, VCE = 5 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 1.0 Adc)

(IC = 8.0 Adc, IB = 3.0 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

2.0

5.0

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 1.0 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

ÎÎÎÎÎ

Cob

ÎÎÎÎ

−

ÎÎÎ

270

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 1)

ÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,

tp = 50 ms, Duty Cycle v 2%)

ÎÎÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

0.025

ÎÎÎÎ

0.1

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

0.100

ÎÎÎÎ

0.5

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,

VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle v 2%)

ÎÎÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

0.60

ÎÎÎÎ

2.0

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

0.11

ÎÎÎÎ

0.5

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 1)

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎ

(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 Vdc, TC = 100_C)

ÎÎÎÎÎ

tsv

ÎÎÎÎ

−

ÎÎÎ

0.8

ÎÎÎÎ

3.0

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

0.4

ÎÎÎÎ

1.5

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎ

tfi

ÎÎÎÎ

−

ÎÎÎ

0.1

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎ

(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 Vdc, TC = 25_C)

ÎÎÎÎÎ

tsv

ÎÎÎÎ

−

ÎÎÎ

0.5

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

0.125

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎ

tfi

ÎÎÎÎ

−

ÎÎÎ

0.1

ÎÎÎÎ

−

ÎÎÎ

2. Pulse Test: PW = 300 ms. Duty Cycle v 2%

MJE5850, MJE5851, MJE5852

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C, CAPACITANCE (pF)

IC, COLLECTOR CURRENT (nA)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS)

1.2

2.0

0.8

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

2.0 0.3 0.7 5.0 10

3.0

Figure 2. Collector Saturation Region

0.01

IB, BASE CURRENT (AMPS)

0.02 0.05

1.2

0.4

100

hFE, DC CURRENT GAIN

0.1 0.2 0.5 10

Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter Voltage

Figure 5. Collector Cutoff Region

2.0

0.8

105

VBE, BASE-EMITTER VOLTAGE (VOLTS)

100

TJ = 150°C

0.5 2.0

-0.4

Figure 6. Capacitance

3000

VR, REVERSE VOLTAGE (VOLTS)

Cib

0.1

104

103

102

101

+0.2 +0.1

100°C

REVERSE FORWARD

25°C

VCE = 200 V

200

100

20 500 1000

1.6

0.4

TJ = 25°CIC = 0.25 A

5.0

0.1 1.0 3.0 7.0

0.2 1.0 7.00.5 100.1 0.3 3.02.0 5.0

7.0

2000

1000

500

20010050105.01.00.50.2

V, VOLTAGE (VOLTS)

200

-0.3-0.2 -0.5-0.1

VCE = 5 V

1.0 A

1.0 2.0 5.0

1.6

IC/IB = 4

1.2

2.0

0.8

0.4

0.2 1.0 7.00.5 100.1 0.3 3.02.0 5.0

1.6

0.2

0.70.7

2.5 A 5.0 A

TJ = 25°C

TJ = 150°C

TJ = 25°C

IC/IB = 4

TJ = 150°C

TJ = 25°C

TJ = 150°C

Cob

TJ = 25°C

TYPICAL ELECTRICAL CHARACTERISTICS

MJE5850, MJE5851, MJE5852

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IN

PUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1 W

1N4937

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

PW Varied to Attain

IC = 100 mA

-10 V

ICM tf

Clamped

Vclamp

TIM

VCEM

TUT

VCC

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

t1 ≈Lcoil (ICM)

VCC

t2 ≈Lcoil (ICM)

VClamp

VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

INPUT

CONDITIONS

CIRCUIT

VALUES

TEST CIRCUITS

−V adjusted to obtain desired IB1

+ V adjusted to obtain desired VBE(off)

+ V

50 W

2 W

INPUT

0.2 mF

0.0025 mF

0.1 mF

500 W

1/2 W

500 W

0.0033 mF

500 W

1/2 W

+ V

50 mF

0.1 mF

MJE15029

1 W 2

MJE15028

50 mF

- V

1/2 W

1N4934

0.1 mF

500 W

1/2 W

0.2 mF

IB1 adjusted to

obtain the forced

hFE desired

TURN−OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

IB1

TURN−ON TIME

Lcoil = 80 mH, VCC = 10 V

Rcoil = 0.7 W

Lcoil = 180 mH

Rcoil = 0.05 W

VCC = 20 V

VCC = 250 V

RL = 62 W

Pulse Width = 10

INDUCTIVE TEST CIRCUIT RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

Vclamp = 250 V

RB adjusted to attain desired IB1

VCE

Table 1. Test Conditions for Dynamic Performance

, CROSSOVER TIME (tcμs)

tti

Figure 7. Inductive Switching Measurements

TIME

VCE

90% IB1

tsr

10%

VCEM

Figure 8. Inductive Switching Times

IC = 4 A

IC/IB = 4

TJ = 25°C

tc 100°C

tsv 100°Ctsv 25°C

tc 25°C

VBE, BASE-EMITTER VOLTAGE (VOLTS)

0.4

0.2

1.0

0.6

0.8

368057214

tsv, VOLTAGE STORAGE TIME (μs)

0.9

0.3

2.7

1.5

2.1

1.2

0.6

3.0

1.8

2.4

10%

ICM

trv

tfi

90%

ICM

ICM VCEM

Vclamp

MJE5850, MJE5851, MJE5852

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SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power

supplies and hammer drivers, current and voltage

waveforms are not in phase. Therefore, separate

measurements must be made on each waveform to

determine the total switching time. For this reason, the

following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% VCEM

trv = Voltage Rise Time, 10−90% VCEM

tfi = Current Fall Time, 90−10% ICM

tti = Current Tail, 10−2% ICM

tc = Crossover Time,10% VCEM to 10% ICM

An enlarged portion of the inductive switching waveform

is shown in Figure 7 to aid on the visual identity of these

terms.

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained

using the standard equation from AN−222A:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents

this relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified at 25°C and has become a benchmark

for designers. However, for designers of high frequency

converter circuits, the user oriented specifications which

make this a “SWITCHMODE” transistor are the inductive

switching speeds (tc and tsv) which are guaranteed at 100_C.

t, TIME (s)μ

t, TIME (ms)

0.01

0.7

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.05 1 2 5 10 20 50 100 200 500

ZqJC(t) = r(t) RqJC

RqJC = 1.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.01

SINGLE PULSE

0.1

0.1 0.50.2

(NORMALIZED)

1 k

0.5

0.3

0.07

0.03

0.02

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Turn−On Switching Times Figure 10. Turn−Off Switching Time

0.1

0.3

0.2

0.4

Figure 11. Typical Thermal Response [ZqJC(t)]

0.02

0.01

1.0

0.7

0.3

0.2

0.5

0.1

IC, COLLECTOR CURRENT (AMPS)

0.7 3.0 102.0 5.00.1 1.0 7.0

VCC = 250 V

IC/IB = 4

TJ = 25°C

0.5

0.03

0.05

0.07

0.7

VCC = 250 V

IC/IB = 4

VBE(off) = 5 V

TJ = 25°C

0.30.2 0.7 4.0 100.1 2.0 7.00.50.3 1.0

t, TIME (s)μ

0.02

0.05

MJE5850, MJE5851, MJE5852

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The Safe Operating Area figures shown in Figures 12 and 13 are

specified for these devices under the test conditions shown.

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

7.0

1.0

100 300 500

3.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

5 ms

100 ms

7.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.05

10 400

5.0

2.0

1.0

0.2

0.1

BONDING WIRE LIMIT

THERMAL LIMIT

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

20 40 70 100

Figure 12. Maximum Forward Bias

Safe Operating Area

TC =

25°C

Figure 13. RBSOA, Maximum Reverse Bias

Safe Operating Area

0.5

0.02

300

200 400

500

IC/IB = 4

VBE(off) = 2 V to 8 V

TJ = 100°C

MJE5850

MJE5851

MJE5852

8.0

2.0

4.0

6.0

MJE5850

MJE5851

MJE5852

200

1 ms

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 12 is based on TC = 25_C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC ≥ 25_C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figure 12 may be found at

any case temperature by using the appropriate curve on

Figure 15.

TJ(pk) may be calculated from the data in Figure 11. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current condition allowable

during reverse biased turn−off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 13 gives the RBSOA

characteristics.

Figure 14. Peak Reverse Base Current Figure 15. Forward Bias Power Derating

IC = 4 A

IB1 = 1 A

TJ = 25°C

TC, CASE TEMPERATURE (°C)

040 120 160

0.6

POWER DERATING FACTOR

SECOND BREAKDOWN

DERATING

0.8

0.4

0.2

60 100 14080

THERMAL

DERATING

200

1.0 268

2.5

3.5

3.0

2.0

1.5

VBE(off), BASE-EMITTER VOLTAGE (VOLTS)

IB2(pk)

(AMPS)

MJE5850, MJE5851, MJE5852

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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