DATA SH EET
Product data sheet
Supersedes data of 1997 Jun 12
1999 Apr 22
DISCRETE SEMICONDUCTORS
PMST6428; PMST6429
NPN general purpose transistors
db
ook, halfpage
M3D187
1999 Apr 22 2
NXP Semiconductors Product data sheet
NPN general purpose transistors PMST6428; PMST6429
FEATURES
•Low current (ma x. 10 0 mA)
•Low voltage (max. 50 V).
APPLICATIONS
•General purpose switc hing and amplification in e.g.
telephony and profes sional communication equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
PMST6428 ∗1K
PMST6429 ∗1L
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed- circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
PMST6428 −60 V
PMST6429 −55 V
VCEO collector-emitter voltage open base
PMST6428 −50 V
PMST6429 −45 V
VEBO emitter-base voltage open collector −6 V
ICcollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 22 3
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistors PMST6428; PMST6429
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed- circuit board.
CHARACTERISTICS
Tamb ≤ 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 30 V −10 nA
IE = 0; VCB = 30 V; Tj = 150 °C−10 μA
IEBO emitter cut-off current IC = 0; VEB = 5 V −10 nA
hFE DC current gain VCE = 5 V
PMST6428 IC = 0.01 mA 250 −
IC = 0.1 mA 250 650
IC = 1 mA 250 −
IC = 10 mA 250 −
DC current gain VCE = 5 V
PMST6429 IC = 0.01 mA 500 −
IC = 0.1 mA 500 1 250
IC = 1 mA 500 −
IC = 10 mA 500 −
VCEsat collector-emitter saturation
voltage IC = 10 mA; IB = 0.5 mA; note 1 −200 mV
IC = 100 mA; IB = 5 mA; note 1 −600 mV
VBE base-emitter vo ltage IC = 1 mA; VCE = 5 V 560 660 mV
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −3pF
Ceemitter cap a citance IC = ic = 0; VEB = 0.5 V; f = 1 MHz −12 pF
fTtransition freque ncy IC = 1 mA; VCE = 5 V; f = 100 MHz 100 700 MHz
1999 Apr 22 4
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistors PMST6428; PMST6429
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
1999 Apr 22 5
NXP Semiconductors Product data sheet
NPN general purpose transistors PMST6428; PMST6429
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or co mpleting a design.
2. The product s ta tus of device(s) described in this do cument may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t s pecification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
consequenc es of use of such informa tio n.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa tion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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regulations. Export might require a prior authorization from
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 115002/00/03/pp6 Date of releas e: 1999 Apr 22 Document orde r number: 9397 750 05712
