© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 8
1Publication Order Number:
TIP120/D
TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
hFE = 2500 (Typ) @ IC
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
= 80 Vdc (Min) TIP121, TIP126
= 100 Vdc (Min) TIP122, TIP127
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 65 WATTS
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123
4
TIP12x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
TIP12xG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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2
MAXIMUM RATINGS
Rating Symbol
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127 Unit
CollectorEmitter Voltage VCEO 60 80 100 Vdc
CollectorBase Voltage VCB 60 80 100 Vdc
EmitterBase Voltage VEB 5.0 Vdc
Collector Current Continuous
Peak
IC5.0
8.0
Adc
Base Current IB120 mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD65
0.52
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD2.0
0.016
W
W/°C
Unclamped Inductive Load Energy (Note 1) E 50 mJ
Operating and Storage Junction, Temperature Range TJ, Tstg 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RqJC 1.92 °C/W
Thermal Resistance, JunctiontoAmbient RqJA 62.5 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0) TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP120, TIP125
(VCE = 40 Vdc, IB = 0) TIP121, TIP126
(VCE = 50 Vdc, IB = 0) TIP122, TIP127
ICEO
0.5
0.5
0.5
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) TIP120, TIP125
(VCB = 80 Vdc, IE = 0) TIP121, TIP126
(VCB = 100 Vdc, IE = 0) TIP122, TIP127
ICBO
0.2
0.2
0.2
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO 2.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE 1000
1000
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
VCE(sat)
2.0
4.0
Vdc
BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) 2.5 Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
Cob
300
200
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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3
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
8.0 k 120
BASE
EMITTER
COLLECTOR
8.0 k 120
ORDERING INFORMATION
Device Package Shipping
TIP120 TO220 50 Units / Rail
TIP120G TO220
(PbFree)
50 Units / Rail
TIP121 TO220 50 Units / Rail
TIP121G TO220
(PbFree)
50 Units / Rail
TIP122 TO220 50 Units / Rail
TIP122G TO220
(PbFree)
50 Units / Rail
TIP125 TO220 50 Units / Rail
TIP125G TO220
(PbFree)
50 Units / Rail
TIP126 TO220 50 Units / Rail
TIP126G TO220
(PbFree)
50 Units / Rail
TIP127 TO220 50 Units / Rail
TIP127G TO220
(PbFree)
50 Units / Rail
80
00 20 40 60 80 100 120 160
Figure 2. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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4
Figure 3. Switching Times Test Circuit
5.0
0.1
Figure 4. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.5
0.05
0.2 0.3 0.5 0.7 1.0 2.0 3.0 10
0.3
0.7
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+8.0 V
V1
approx
-12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
25 ms
0
RB
51 D1
+4.0 V
VCC
-30 V
RC
TUT
8.0 k 120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
3.0
0.2
0.1
0.07
5.0 7.0
Figure 5. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01 SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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5
20
1.0
Figure 6. ActiveRegion Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0 5.0 20 50 100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
0.5
IC, COLLECTOR CURRENT (AMP)
TJ = 150°Cdc
1ms
100 ms
0.2
0.1
10
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
5ms
3.0 7.0 30 70
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
300
0.1
VR, REVERSE VOLTAGE (VOLTS)
30 2.0 5.0 10 20 100500.2 0.5 1.0
C, CAPACITANCE (pF)
100
50
TJ = 25°C
Cib
70
Cob
PNP
NPN
Figure 7. SmallSignal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10
20 50 100 200 10002.0 5.0 10
3000
500
100
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
1000
PNP
NPN
Figure 8. Capacitance
50
500
hfe , SMALL-SIGNAL CURRENT GAIN
5000
2000
300
200
30
20
200
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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6
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20,000
0.1
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200 0.2 0.3 0.5 1.0 2.0 10
500
1000
300
hFE, DC CURRENT GAIN
2000
3000
VCE = 4.0 V
0.7 3.0
NPN
TIP120, TIP121, TIP122
PNP
TIP125, TIP126, TIP127
Figure 10. Collector Saturation Region
3.0
0.3
IB, BASE CURRENT (mA)
1.0 0.5 1.0 2.0 10 30
1.8
IC = 2.0 A
TJ = 25°C
4.0 A
2.2
2.6
0.7 5.0
3.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 11. “On” Voltages
VBE @ VCE = 4.0 V
3.0
10,000
5000 TJ = 150°C
25°C
-55°C
20
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
VCE = 4.0 V
TJ = 150°C
25°C
-55°C
1.4
6.0 A
IB, BASE CURRENT (mA)
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
5.0 7.0
20,000
0.1
200 0.2 0.3 0.5 1.0 2.0 10
500
1000
300
2000
3000
0.7 3.0
10,000
5000
5.0 7.0
7000
700
3.0 7.0
3.0
0.3
1.0 0.5 1.0 2.0 10 30
1.8
2.2
2.6
0.7 5.0 20
1.4
3.0 7.0
IC = 2.0 A 4.0 A 6.0 A
0.7 7.0
3.0
0.1 0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5 3.00.7 7.0
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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7
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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Phone: 81357733850
TIP120/D
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