SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE BVcEO hee NE (v) Min.-Max. @1,Vce(V) (db) 2N3391A 5.0 . 2N3844 \ : " 10.2 2N3844A , : 8.5 2N3845 ae 10.2 2N3845A 8.5 Conditions Device Type 2N3900A 2N3901 2N5232A 2N5249A 2N5306A 2N5308A 2N5309 2N5310 2N5311 SILICON SIGNAL LOW NOISE AMPLIFIERS T0-92 PACKAGE BVcEO here NF Device Type (V) Min.-Max. @ Ico, VcE{V) (db) Conditions GES5827A GESS828A GES6000 GES6001 WWwon GES6004 GES6005 GES6010 GES6011 GES6014 WoW WwW GES6015 GES929 GES930 GES5306A GES5308A D3881-4 D38S87 D38S8-10 D38W8-10 D38W 13-14 GES6012 GES6013 GES6016 GES6017 109SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE BVcEO hee VcE(SAT) (v) Min.-Max. @ lo, VceE (Vv) (V) Max. @ lo, Ip 200mA, 200uA 200mA, 200KuA 200mA, 200uA 200mA, 200uA 200mA, 200UA 200mA, 200HA 500mA, 500uA 500mA, 500uA 500mA, 500uA GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 an NUUO RARE RA TO-98 PACKAGE BVcEO hee VcE(SAT) (v) Min.-Max. @ lo,Vcge (Vv) (V) Max. @ lc. Ip 2N5305 200mA, 200HA 2N5306 200mA, 200HA 2N5306A 200mA, 200uUA 2N5307 ' 200mA, 200HA 2N5308 200mA, 200HA 2N5308A 200mA, 200HA D16P1 200mA, 200HA Type SILICON SIGNAL HIGH VOLTAGE TYPES TO-92 PACKAGE Device BVceo hee lcBo VcEISAT) NPN (V) Min.-Max. @ Ic, Voge (V) Max. @ Vog (Vv) (V) Max. @ lo, te GES6218 1.0 10mA, 1mA GES6219 2 1.0 1OmA, IMA GES6220 2.0 20mA, 2mA GES6221 i 2.3 20mA, 2mMA TO0-98 PACKAGE Device BVceo hee tcBo VcE(SAT) NPN (V) = Min.-Max. @ I, Voge (V) Max. @ Voe(V) (Vv) Max. @ lo. Ig 2N3877 20 2mA, 5 -125 10mA, 1mA 2N3877A 20 2mA, 5 125 10mA, 1mA 2N5174 40-600 10mA, 5 -950 10mA, 1mA 2N5175 55-160 10mA, 5 950 10mA, 1mA 2N5176 140-300 10mA, 5 -950 10mA, 1mA 111 HAAUUALULUULSilicon ll Transistors 2N5305,6,6A {| FOR T0-92 SERIES SEE GES5305 | Soros rN & Rear oO . A Ben rs [f. The General Electric 2N5305, 2N5306 and 2N5306A are NPN, silicon, planar, epitaxial, passivated Dar- lington monolithic amplifiers. These devices are especially suited for preamplifier input stages requiring in- put impedances of several megohms or extremely low level, high gain, low noise amplifier applications. Additional applications include medium speed switching circuits in consumer and industrial control appli- cations. WOTE 1: LEAD DIAMETER (3 CONTROLLED I THE FOWE BETWEEN .070 AND 250 FROM THE SEATING PLANE. BETWEEN 280 AND END OF LEAD A MAM OF O21 18 HELO absolute maximum ratings: (25C) (unless otherwise specified) OONOTE RL, Voltages _ f + Collector to Base Veno 25 Volts i ot Yb Collector to Emitter Vero 25 Volts ri Emitter to Base Vino 12 Volts Current Collector (Steady State) Tc 300 mA Collector (Pulsed) * To 500 mA Base (Steady State) In 50 mA GY Dissipation Total Power (T, S 25 C)+ Pr 400 mW Total Power with Heatsink (Ts = 25 C)++ Pr 600 mW Total Power with Heatsink (Tc = 25 C) ttt Pr 900 mW e Temperature Storage Toes 65 to +150 C @) Operating T; 65 to +125 C Lead, 46 + 14 from case for 10 sec. max. Ti +260 E_ wove san puamtitep conrmoluco'm Tae tome *Pulse conditions: 300 usec. pulse width, 2% duty cycle. Equiv. Circuit sewers vo ance orseao ava or ore +Derate 4.0 mW/* C for increase in ambient temperature above 25 C. NOTE 2; MOLE POR 4 ACAGY wi seEEPY 3 Fm, ORDER HEATSINE VERSIONS An: HESSOS, +tDerate 6.0 mW/ C for increase in ambient temperature above 25 C. tttDerate 9.0 mW/ C for increase in case temperature above 25 C. AS SS AS A SS SS SS SS SS ED SSS SRY SRNR NY NS ES SD SS LS SE OND SS MY SS A SS SN SNEED ANN EN Ss SS NS SOU SY SD STATIC CHARACTERISTICS Min. Max. Collector to Base Breakdown Voltage (Ic 0.1 wA, Ir 0) Vaweso 25 Volts Collector to Emitter Breakdown Voltage (I. = 10mA, In = 0) Viawcro 25 Volts Emitter to Base Breakdown Voltage (I: = 0.12A, I: = 0) Vaaweno 12 Volts Forward Current Transfer Ratio (Vee = 5V, Ic = 2mA) 2N5305 hre 2000 20000 (Vou = 5V, Ic = 100mA) 2N5305 hre 6000 (Vez = 5vV, Ie= 2mA) 2N5306, A her 7000 70000 (Vex = 5V, Ic = 100mA) 2N5306, A hre 20000 Collector Cutoff Current (Ves = 25V, In = 0) Tepo 100 nA. (Ver = 25V, I: = 0, Ts = 100 C) Tcso 20 BA Emitter Cutoff Current (Vix = 12V, le = 0) Teno 100 nA Collector Emitter Saturation Voltage (Ic = 200mA, Is = 0.2mA) Verwar 1.4 Volts Base Emitter Saturation Voltage (Ie = 200mA, In = 0.2mA) Varcwar 1.6 Volts Base Emitter Voltage (Vc: = 5V, Ic = 200mA) Van 1.5 Volts DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio Min. Typ. Max. (Vex = 5V, Ie = 2mA, f = 1kH2z) 2N5305 Rre 2000 (Vex = 5V, Ie = 2mA, f = 1kHz) 2N5306, A he 7000 (Veen = 5V, Ic = 2mA, f -= 30 MHz) hee 15.6 dB Gain Bandwidth Product (Vi, = 5V, I. = 2mA, f = 10 MHz) fr 60 MHz Input Impedance (Vi = 5V, I. =2mA, f 1 kHz) hie 650 kohms Collector Base Capacitance (V... = 10V,f =: 1 MHz) Con 1.6 10 pF Emitter Capacitahce (Vin = 0.5V, f = 1 MHz) Cur 10.5 pF 4782N5305, 6, 6A 2N5306A only Min. Typ. Max. Units Noise Voltage (Ic = 0.6 mA, Ver = 5V, Re = 160k2 f = 10 Hz to 10kHz, B.W. = 15.7 kHz) er 195 230 n V/V Hz NOTE: 4. measured on a Quan-Tech Model 2283/2181M test set with 10 Hz filter modified by Quan-Tech to wideband (f = 10 Hz to 10 kHz, B.W. = 15.7 kHz) filter. Typical Curves Normalized hyg vs. Ic Typical hyz vs. Ic vets | iM N Tat 58C N Veg *5.0,VOLTS Te = 25C yy Tar 2see N A <= [4 NN 3 2 g 2 20 i = : Vy N Ty 100C = z is yi | | ha eo & | \ \ 2 N 1 3 La N g a Chery \ (K 7 Cen Lo Oo o2 0406 | 2 4681 2 4680 20 4060 100 200 400 1000 wos Tg COLLECTOR CURRENT (mA) * 0.0] 9.01 O.1 10 100 1000 Ig-COLLECTOR CURRENT-mA Von vs. Io Ig/tg* Leele] Vee (saT)~ COLLECTOR-EMITTER VOLTAGE -VOLTS Ig-COLLECTOR CURRENT-mA VaxcsaT) VS. Io Transconductance Characteristic, Vaz vs. Io I/Ig* 1000 Tantoorc Vag (sat) BASE-EMITTER SATURATION VOLTAGE -VOLTS Vog -GASE EMITTER VOLTAGE-VOLTS Ig-COLLECTOR CURRENT-mA Ie- COLLECTOR CURRENT - mA 4792N5305, 6, 6A logo vs. Ta lezo vs. Ts hrs vs. Ty Ta Teno" COLLECTOR CUTOFF CURRENT-pA Tgpo-EMITTER CUTOFF CURRENT-pA Teg NORMALIZED TO 28C VALUE 1 730 -20-40 0 10 20 3 40 50 60 60 90 t n= 90 Ta- AMBIENT TEMPERATURE ~*C 30-20 40 0 1 20 30 40 80 60 7% 60 Ta AMBIENT TEMPERATURE ~C Ty~AMGLENT TEMPERATURE ~ C Equivalent Input Noise Voltage and Current vs. Bias Current Vce =5V Tq * 25C NOTE . OPTIMUM SOURCE RESISTANCE Rg e= Rgt <i lf ~3 3 nN t H ~ a 7 (1OOHz) Ig(l0oHe) re > 2 3 4 . 2 Ww - 8 Ee 3 5 % t Ly $ _-- we ee iy (IkHz) 3 (lOkHz) = Qa & 8 t 2 4 ll 2 4 : COLLECTOR CURRENT -mA NOTE: Due to the noise characteristics of this device versus frequency, calculation of noise figure (N.F.) from ea, ix values is not accurate [as is the case with field effect transistors (F.E.T.s) }. 480Typical Collector Characteristics Tas2sec Tos 7aa Tat 85C Ig*2nA Ig-COLLECTOR CURRENT-mA Ig-COLLECTOR CURRENT-mA Ig-COLLECTOR CURRENT-mA Vce-COLLECTOR-EMMT TER VOLTAGE-VOLTS Vog-COLLECTOR-EMITTER VOLTAGE -VOLTS Veg -COLLECTOR-EMITTER VOLTAGE -VOLTS Ths 25C Tar 85C Ig-COLLECTOR CURRENT-mA Tp-COLLECTOR CURRENT-mA Ig-COLLECTOR CURRENT-mA Vcg-COLLECTOR-EMITTER VOLTAGE -VOLTS Vcg~ COLLECTOR- EMITTER VOLTAGE- VOLTS Vee =COLLECTOR-EMITTER VOLTAGE -VOLTS 481