New Product V40100C, VB40100C, VI40100C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A FEATURES TMBS (R) * Trench MOS Schottky technology TO-220AB * Low forward voltage drop, low power losses * High efficiency operation * Low thermal resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 2 * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, TO-263AB and TO-262AA package) 3 1 V40100C PIN 1 PIN 2 PIN 3 CASE * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-263AB TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 2 MECHANICAL DATA 1 1 VB40100C Case: TO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating VI40100C PIN 1 K PIN 2 2 3 HEATSINK PIN 1 PIN 2 PIN 3 K Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS per Polarity: As marked IF(AV) 2 x 20 A VRRM 100 V IFSM 250 A VF at IF = 20 A 0.61 V TJ max. 150 C Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL V40100C VB40100C VI40100C UNIT 100 V IF(AV) 40 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 A Non-repetitive avalanche energy at TJ = 25 C, L = 90 mH per diode EAS 230 mJ Peak repetitive reverse current at tp = 2 s, 1 kHz, TJ = 38 C 2 C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/s TJ, TSTG - 40 to + 150 C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode Operating junction and storage temperature range Revision: 19-Oct-11 Document Number: 89042 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V40100C, VB40100C, VI40100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IR = 1.0 mA Breakdown voltage (2) TA = 25 C IR = 10 mA SYMBOL VBR TYP. MAX. 100 (minimum) - 105 (minimum) - IF = 5 A IF = 10 A TA = 25 C IF = 20 A Instantaneous forward voltage per diode (1) VF IF = 5 A TA = 125 C IF = 10 A IF = 20 A TA = 125 C Reverse current at rated VR per diode (2) TA = 25 C VR = 100 V V 0.47 - 0.54 - 0.67 0.73 0.38 - V 0.45 - 0.61 0.67 9 10 - mA 21 1000 45 mA TA = 25 C VR = 70 V UNIT IR TA = 125 C A A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL V40100C VB40100C VI40100C UNIT RJC 2.0 2.0 2.0 C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40100C-E3/4W 1.85 4W 50/tube Tube TO-263AB VB40100C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB40100C-E3/8W 1.39 8W 800/reel Tube TO-262AA VI40100C-M3/4W 1.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 18 50 16 VB40100C V40100C 40 30 Average Power Loss (W) Average Forward Current (A) VI40100C VF40100C 20 10 D = 0.5 14 D = 0.8 D = 0.3 12 D = 0.2 10 8 D = 1.0 D = 0.1 T 6 4 2 D = tp/T tp 0 0 0 25 50 75 100 125 150 Case Temperature (C) Fig. 1 - Forward Current Derating Curve Revision: 19-Oct-11 175 0 5 10 15 20 25 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Document Number: 89042 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V40100C, VB40100C, VI40100C www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 100 TA = 150 C 10 TA = 125 C TA = 100 C 1 TA = 25 C 0.1 0 0.2 0.4 0.6 0.8 Junction to Case 1 V(B,I)40100C 0.1 0.01 1 0.1 Instantaneous Forward Voltage (V) 10 100 Fig. 6 - Typical Transient Thermal Impedance Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Transient Thermal Impedance (C/W) 100 Instantaneous Reverse Current (mA) 1 t - Pulse Duration (s) TA = 150 C TA = 125 C 10 TA = 100 C 1 0.1 TA = 25 C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 10 1 VF40100C 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 10 000 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Revision: 19-Oct-11 Document Number: 89042 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V40100C, VB40100C, VI40100C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) PIN 2 1 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) Mounting Pad Layout 0.055 (1.40) 0.045 (1.14) 0.245 (6.22) MIN. 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 30 (TYP.) (REF.) 0.250 (6.35) MIN. 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 3 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) Revision: 19-Oct-11 0.401 (10.19) 0.381 (9.68) 0.110 (2.79) 0.100 (2.54) PIN 1 PIN 2 PIN 3 HEATSINK 0.035 (0.90) 0.028 (0.70) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) Document Number: 89042 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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