VS-300U(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 300 A FEATURES * Alloy diode * Popular series for rough service * Stud cathode and stud anode version * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-9 (DO-205AB) TYPICAL APPLICATIONS * Welders PRIMARY CHARACTERISTICS * Power supplies IF(AV) 300 A Package DO-9 (DO-205AB) Circuit configuration Single * Motor controls * Battery chargers * General industrial current rectification MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC IFSM I2t VRRM VALUES UNITS 300 A 150 C 50 Hz 6550 60 Hz 6850 A 50 Hz 214 60 Hz 195 Range 400 V -65 to +200 C IRRM MAXIMUM AT TJ = 175 C mA TJ kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-300U(R).. VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 100 200 20 200 300 30 300 400 40 400 500 60 600 700 40 Revision: 11-Jan-18 Document Number: 93508 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-300U(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) TEST CONDITIONS 180 conduction, half sine wave t = 10 ms Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t Maximum value of threshold voltage Maximum value of forward slope resistance No voltage reapplied 100 % VRRM reapplied No voltage reapplied VFM UNITS 300 A 130 C 6550 6850 A 5500 Sinusoidal half wave, initial TJ = TJ maximum 5750 214 195 kA2s 151 100 % VRRM reapplied 138 t = 0.1 to 10 ms, no voltage reapplied VF(TO) rf Maximum forward voltage drop VALUES TJ = 200 C Ipk = 942 A, TJ = 25 C 2140 kA2s 0.610 V 0.751 m 1.40 V VALUES UNITS -65 to +200 C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.18 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08 K/W Maximum allowed mounting torque +0 -20 % Not lubricated threads 37 Lubricated threads 28 Approximate weight Nm 250 (JEDEC(R)) Case style see dimensions - link at the end of datasheet g DO-9 (DO-205AB) (1) Note (1) 302U-A uses case style B-26 RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.020 0.015 120 0.024 0.025 90 0.031 0.034 60 0.045 0.047 30 0.077 0.077 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93508 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-300U(R) Series 200 Vishay Semiconductors Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) www.vishay.com 300U40AM20 RthJC (DC) = 0.18 K/W 180 Conduction Angle 160 140 30 60 90 120 120 0 180 50 100 150 200 250 300 350 200 300U40AM20 RthJC (DC) = 0.18 K/W 190 180 170 Conduction Period 160 150 140 30 130 90 120 120 110 0 Average Forward Current (A) 500 150 Conduction Angle 100 300U40AM20 Tj = 200C K/ W 0.4 K/ W 0.5 K/W 0.7 K/W 1K /W 1.5 K /W aR elt -D RMS Limit 200 K/ W W K/ 0.1 Maximum Average Forward Power Loss (W) 0. 2 0. 3 50 400 = 250 300 A hS Rt 300 200 Fig. 2 - Current Ratings Characteristics 180 120 90 60 30 350 100 180 DC Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 400 60 3 K/W 0 0 50 100 150 200 250 300 350 250 50 Average Forward Current (A) 75 100 125 150 175 200 Maximum Allowable Ambient Temperature (C) 500 DC 180 120 90 60 30 450 - 3 W K/ W 0. K/ K/ W 0.5 RMS Limit 200 0.7 Conduction Period 150 100 300U40AM20 Tj = 200C 50 R 250 2 1 300 0. 0. 350 = 400 A hS Rt Maximum Average Forward Power Loss (W) Fig. 3 - Forward Power Loss Characteristics K/W K/W 1 K/ W 1.5 K /W 3 K/W 0 0 100 200 300 400 Average Forward Current (A) 500 50 75 100 125 150 175 200 Maximum Allowable Ambient Temperature (C) Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93508 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-300U(R) Series 6000 Vishay Semiconductors Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 200C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 5500 5000 4500 4000 3500 3000 2500 2000 300U40AM20 1500 1 10 7000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = 200C 6000 No Voltage Reapplied 5500 Rated Vrrm Reapplied 6500 5000 4500 4000 3500 3000 2500 2000 300U40AM20 1500 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 10000 1000 Tj = 25C Tj = 200C 100 300U40AM20 10 0 0.5 1 1.5 2 2.5 3 Instantaneous Forward Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 7 - Forward Voltage Drop Characteristics 1 0.1 Steady State Value RthJC = 0.18 K/W (DC Operation) 0.01 300U40AM20 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Revision: 11-Jan-18 Document Number: 93508 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-300U(R) Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 0 U 40 A M20 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - 30 = essential part number 3 - 0 = standard device 2 = 300U top threaded version 4 - * U = stud normal polarity (cathode to stud) * UR = stud reverse polarity (anode to stud) 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - A = essential part number 7 - None = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A M20 = Metric device M20 x 1.5 (available with standard device only) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95340 Revision: 11-Jan-18 Document Number: 93508 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-9 (DO-205AB) and B-26 for 300U(R) Series DIMENSIONS FOR 300U(R)-A SERIES - DO-9 (DO-205AB) in millimeters (inches) 4.32 19.18 (0.755) Max. (0.17 Max 0) . 11.51 (0.453) 10.74 (0.423) O 8.89 (0.350) O 8.38 (0.330) 13.46 (0.530) 11.94 (0.470) 149.9 (5.90) 134.6 (5.30) O 27.94 (1.10) Max. 53.34 (2.10) Max. 9.27 (0.365) 7.87 (0.310) 3.18 (0.125) Max. Unthreaded portion 21.03 (0.83) 20.14 (0.79) 31.75 (1.250) Across flats 30.94 (1.218) O 19.02 (0.749) Max. 3/4" 16UNF-2A for metric device: M20 x 1.5 contact factory DIMENSIONS FOR 302U(R)-A SERIES - B-26 in millimeters (inches) 3/8"-24UNF-2A O 9.50 (0.374) Max. 16.51 (0.65) 14.99 (0.59) 18.29 (0.72) Across flats 16.76 (0.66) O 27.94 (1.10) Max. 58.67 (2.31) 55.63 (2.19) 28.45 (1.12) Max. 9.27 (0.365) 7.87 (0.310) 3.18 (0.125) Max. 21.03 (0.828) 20.14 (0.793) 31.75 (1.250) Max. Across flats O 19.02 (0.749) Max. 3/4" 16UNF-2A Revision: 15-Mar-17 Document Number: 95340 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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