VT6T2 / EMT52
General purpose transister (isolated dual transistors) Datasheet
llOutline
Parameter Tr1 and Tr2 VMT6 EMT6
VCEO -50V
IC-100mA
VT6T2 EMT52
(SC-107C)
llFeatures ll Inner circuit
1) General Purpose.
2) Two 2SAR523 chips in one package.
3) Transister elements are independent, eliminating
interface.
4) Mounting cost and area can be cut in half.
5) Lead Free/RoHS Compliant.
llApplication
Switching, LED driver
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
VT6T2 VMT6 1212 T2R 180 8 8000 T2
EMT52 EMT6 1616 T2R 180 8 8000 T52
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© 2013 ROHM Co., Ltd. All rights reserved. 1/7 20130905 - Rev.002
VT6T2 / EMT52 Datasheet
llAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter Symbol Values Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current
IC-100 mA
ICP*1 -200 mA
Power dissipation VT6T2 PD*2 *3 150 mW
EMT52 150
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = -50μA -50 - - V
Collector-emitter breakdown
voltage BVCEO IC = -1mA -50 - - V
Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V
Collector cut-off current ICBO VCB = -50V - - -0.1 μA
Emitter cut-off current IEBO VEB = -5V - - -0.1 μA
Collector-emitter saturation voltage VCE(sat) IC = -50mA, IB = -5mA - -0.15 -0.40 V
DC current gain hFE VCE = -6V, IC = -1mA 120 - 560 -
Transition frequency fT
VCE = -10V, IE = 10mA,
f = 100MHz - 300 - MHz
Output capacitance Cob
VCB = 10V, IE = 0A,
f = 1MHz - 1.6 - pF
*1 Pw=1ms Single Pulse
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
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© 2013 ROHM Co., Ltd. All rights reserved. 2/7 20130905 - Rev.002
VT6T2 / EMT52 Datasheet
llElectrical characteristic curves(Ta=25℃℃)
<For Tr1 and Tr2 in common>
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current(I)
Fig.4 DC Current Gain vs. Collector
Current(II)
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© 2013 ROHM Co., Ltd. All rights reserved. 3/7 20130905 - Rev.002
VT6T2 / EMT52 Datasheet
llElectrical characteristic curves (Ta=25°C)
<For Tr1 and Tr2 in common>
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current(I)
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current(II)
Fig.7 Base-Emitter Saturation Voltage vs.
Collector Current
Fig.8 Gain Bandwidth Product vs. Emitter
Current
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© 2013 ROHM Co., Ltd. All rights reserved. 4/7 20130905 - Rev.002
VT6T2 / EMT52 Datasheet
llElectrical characteristic curves (Ta =25°C)
<For Tr1 and Tr2 in common>
Fig.9 Emitter input capacitance vs. Emitter-
Base Voltage Collector output capacitance
Fig.10 Safe Operating Area
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© 2013 ROHM Co., Ltd. All rights reserved. 5/7 20130905 - Rev.002
VT6T2 / EMT52 Datasheet
llDimensions
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© 2013 ROHM Co., Ltd. All rights reserved. 6/7 20130905 - Rev.002
VT6T2 / EMT52 Datasheet
llDimensions
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved. 7/7 20130905 - Rev.002
