0 Fem eee et ABH f MOTOROLA SC {DIODES/OPTO} MOTOROLA = SEMICONDUCTOR ox TECHNICAL DATA Designers Data eet STUD MOUNTED FAST RECOVERY POWER RECTIFIERS . , . designed for special applications such as de power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies and free wheeling diodes. A complete line of fast recovery rectifiers having typical recovery time of 150 nanoseconds providing high efficiency at frequencies to 250 kHz. Designers Data for Worst Case Conditions The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves representing boundaries on device character- istics -- are given to facilitate worst case design. "MAXIMUM RATINGS * Rating Symbot { 1N3909 | 1N3910 | 1N3911 | 1N3912 | 1N3913]MR1396] Unit Paak Repetitive Reverse Voltage | VARRM Vales Working Peak Reverse Voltage] Vawea 50 400 200 300 400 600 DC Blocking Voltage VR Non-Repetitive Peek Reverse | Vasu 16 150 280 350 450 650 | Volts Voltage 7 . . . a AMS Reverse Valtage Vainmsi{ -35~-] 70 140 210 | 280 420 | Volts Avarage Rectified Forward Ig Amps Current [Single phase, 3 resistive load, Tc * 100C} : Non-Repatitive Peak Surge lesM Amp Current (surge applied at rated 300 toad tions} : a ing Junction T! Ts =65 to +160 % Range 7 ~ -- Storage Temperature Range Tstg -65 to $175 % THERMAL CHARACTERISTICS | Characteristic [symbot [| Max | _ Unit | [ Thermal Resitance, Junction to Care [Fasc {| 12 [| cw | *ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Instentansous Forward Voltage ve ~ 1.2 15 Volts {ip = 93 Amp, Ty = 150C) - Forward Voltage Ve - Wd 14 Volts {tp = 30 Amp, Tc = 26C) Reverse Currant (rated de voltage} Te = 25C la = 10 25 uA Te = 100C - os 1.0 | mA REVEASE RECOVERY CHARACTERISTICS Characteristic. Symbol Min Typ Max | Unit Reverse Hecovery Time ter ns (Ig = 1.0 Amp to Vg * 30 Vac, Figure 16} - 150 200 (png = 38 Amp, difdt = 26 Alus, Figure 17) = 200 |_400 Raverss Recovery Current IRMIREC! - 15 2.0 Amp (Ig 1.0 Amp to Vp * 30 Vdc, Figure 16) REC) *Indicates JEDEC Reglatered Data for IN3909 Series. 3-28 Lee D i b367255 0079554 4 i 1N3909 thru 1N3913 MR1396 FAST RECOVERY POWER RECTIFIERS 50-600 VOLTS 30 AMPERES STYLE 1; TERM. $. CATHODE . 2. ANODE CASE 424-01 DO-203A8 METAL MECHANICAL CHARACTERISTICS CASE: Welded, hermetically sealed FINISH: All external surfaces corrosion resistant and ceadily solderable POLARITY: Cathode to Case WEIGHT: 17 Grams (Approximately) MOUNTING TORQUE: 25 in-Ibs max. 1203-19MOTOROLA SC {DIODES/OPTO? 7-Q3_yq LE D Bp esb7e55 0079555 7 i | 1N3909 thru 1N3913, MR1396 Cy . a FIGURE 1 FORWARD VOLTAGE FIGURE 2 ~ MAXIMUM SURGE CAPABILITY 100 - pF 90 to surge, the rectitier is operated such that Ty > 150C; =~ 80 VRRM may be apptied between a 2 each Cycle of Surge. #2: <= 60 a & Sw 50 Ee : 82) LN NSN ' aw BS & - 20 & = = 0 a 10 3.0 9 NUMBER OF CYCLES AT 60 Hz ec < z= 2 NOTE i a 3 2 Pok Pox z= DUTY CYCLE, 0 = to/ty z tp =| PEAK POWER, Pog, Is peak of an = TIME tquivalent square power pulse. a = {1 +] a To determine maximum junction temperatuse of the diode in 2 given situalian, the following procedure is etcammended: The temperature of the case should be measured using a thermocauple placed on the case al the temperature referance point (sve Note 3}. The thermal mass connected to the case is normally ltge enough so that it will not sig intly respond to beat surges generated in the diode asa result of pulsed operation once steady-state conditionsareechieved. Using the measured velueot Te, the junction temperalure may be determined by: Ty2Te +4 Tse where 4 Tye is the increase in junction temperature above the case temperature. ft may be determined by: ATyC Ppk Rose (0 + 1D) + clty + tp) #eltp) elt whare ut} = normalized value of Wapsient tharmat resistance at time, t, from Figure Zhe: ry + to} = normalized value of transient thermat resistance at time ty tp- ve, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIGURE 3 THERMAL RESPONSE 2 we rt), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NOAMALIZED) o' . 1, TIME (ms) 3-29MOTOROLA SC {DIODES/OPTOF FT /)Z yQuce D Bj 367255 0079556 ij 1N3909 thru 1N3913, MR1396 SINE WAVE INPUT SQUARE WAVE INPUT FIGURE 4 FORWARD POWER DISSIPATION FIGURE 5 FORWARD POWER DISSIPATION 50 50 7 : oc ec . aw w ' . = = a NPR) 2 5. Kav) : q < . & $20 =z 40 i ts & 2 : of oe i aie ae } = 20 =e 20 : we So 28 pt z w = 10 & & 0 40 80 2 20 24 2B 32 0 40 8.0 12 16 20 24 28 32 ; 1g(av). AVERAGE FORWARD CURRENT (AMP} IF(AV), AVERAGE FORWARD CURRENT (AMP) FIGURE 6 CURRENT DERATING FIGURE 7 CURRENT DERATING @ S de nm > CAPACITIVE Wen) wav) 10 MPR). 2g 2d. IF(AV). AVERAGE FORWARD CURRENT (AMP) S a IR(AV), AVERAGE FORWARD CURRENT (AMP) o Te, CASE TEMPERATURE (C) Tc, CASE TEMPERATURE (C) FIGURE 8 TYPICAL REVERSE CURRENT FIGURE 9 NORMALIZED REVERSE CURRENT to! tp, REVERSE CURRENT (zA} S 3 Ip, REVERSE CURRENT (NORMALIZED) S Ss ; 2 Q 100 20 300 400 500 600 700 30.40 50 60 70 80 90 100 110 120 130 140 150 160 Vp, REVERSE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) 3-30fercecerrsrar cane 1N3909 thru 1N3913, MR1 396 Os TYPICAL DYNAMIC CHARACTERISTICS FIGURE 11 JUNCTION CAPACITANCE FIGURE 10 FORWARD RECOVERY TIME "DS bt MH tire FORWARD RECOVERY TIME (us) 10 20 5.0 10 20 Ip, FORWARD CURRENT (AMP} Ty= 260 Cj, CAPACITANCE (pF} 50 100 1g 20 50 10 20 Vp. REVERSE VOLTAGE {VOLTS} TYPICAL RECOVERED STORED CHARGE DATA FIGURE 12 - Ty = 25C IF Aa 05 A 02 Ot 0.05 Op, RECOVERED STORED CHARGE (utc) os 2 a O01 1.0 20 5.0 1g 20 di dUtAMP pst FIGURE 14 Ty = 100C tem A QR. RECOVERED STORED CHARGE (uch 1OA 10 20 50 10 20 ditdt, {AMP/ys) 20A (SEE NOTE 2} FIGURE 13 Ty = 75C 40A Og, RECOVERED STORED CHARGE tue} loA 50 100 10 :2.0 $0 10 20 dhidt, (AMPs) 20 =20A lpm = 404 05 02 ai 0.05 Or. RECOVERED STORED CHARGE (yc) 0.02 50 100 1.0 2.0 50 to 20 difdt (AMP/ys) 3-31 lem = 20A FIGURE 15 Ty = 150C 50 00 190 E MOTOROLA SC {LDIODES/0PTO} T-OR-F wee D a b367255 0079557 3 iMOTOROLA SC {LDIODES/OPTO} T=03-/P2e D i 6367255 0079558 5 fj 1N3909 thru 1N3913, MR1396 FIGURE 16 JEDEC REVERSE RECOVERY CIRCUIT RI AW ul Al = 60 Ohms Th difdt ADJUST R2 = 250 Ohms D1 = 1N4723 . TR 02 = 1N4001 120 VAC + C1 if 03 = 1N4933 03 Witt DJUST SCRI = MCR729-10 60 Az f A Fe px) ADs out Ct = 0.5 to $0 pF . C2 = 4000 pF hI c2 22 Li=0-27 pH ~ $ a) T1 = Vaciae Adjusts px) and difdt [- >Re + aco20 T2= 4:3 . ASO, 13 Jal (to trigger circuit) D1 BAYH scat (<0.01 pH lg wi forced m t vv OSCILLOSCOPE t Beupeean RESISTOR NOTE 3 Reverse recovery time is the period which elapses from the time that the current, thru a previously forward biased rectifier ' itty oi/dt diode, passes thru zero going negatively until the reverse current FM recovers to a point which is fess than 10% peak reverse current. ter Reverse recovery time is a direct function of the forward OP current prior to the application of reverse voltage. OR For any given rectifier, recovery time is very circuit depend- ent. Typical and maximum recovery time of all Motorola fast 'RMIREC) recovery power rectifiers are rated under a fixed set of conditions " using Ip = 1.0.A, VR. = 30 V. In order to cover alf circuit conditions, curves ar given for typical recovered stored charge versus commutation di/dt for various levels of forward current end for junction ternperatures of 25C, 75C, 100C, and 150C. . To use these curves, it is necessary to know the forward current level just before commutation, the circuit commutation di/dt, and the operating junction temperature. The reverse re- covery test current waveform for all Motorola fast recovery rectifiers is shown. From stored charge curves versus di/dt, recovery time (tp) and peak reverse recovery current (IRM(REC)) can be closely approximated using the following formulas: wan x{ 28] ren" |dildt Inninec} * 1-41 x [ag dived] 1/2 3-32