OPTEK TECHNOLOGY INC ObE D J b79a580 oOooa4L 5 fj Optasfactronics Division TAW Electronic Components Group Preduct Bulletin 5328 January 1985 au vy -4)-V3 Slotted Optical Switches Types OPB820, OPB820S12, OPB820S7, OPB820S5 ieee $2013.30 .16044.06) P aar2. 166(3.04) men OPTICAL g -4. .105(2,87 | 0787.91 30 4402.79} She 090{2:28) *42gi10.a0) aga IK sesosa COLLECTOR 181038 a - feo] SQ. HOM .080{2.03) RAD APERTURE SIZE 070(1.78) GPBB20S12 .012 x.04010.30~ 1.02) 0882097 007 .04040.18* 1.02) iG at OPBBZOSE 008 0.40(0-13% 1.02) * CATHODE LEA0, NOTE: THIS DIMENSION ig CONTROLLED OTHER LEADS ARE AT THE HOUSING SURFACE 08(1.62) NOM. DIMENSIONS ARE IN INCHES ane. BOTTOM ViEW (MILLIMETERS) Features Non-contact switching Three standard aperture sizes for high resolution Fast switching speed Description The OPB820, OPB820S12, 0PB82087, and OPB620S6 each consist of an infrared emitting diode and an NPN sificon phototransistor mounted in @ low cost black plastic housing on opposite sides of a 0.080 {2.03 mm) wide stot. Phototransistor switching takes place whenever an Opaque object passes through the slot. The OPB820 is unapertured. The OPBE20S12, OPB82087, and OPB820S5 each have an aperture in front of the phototransistor for high resolution position sensing. The OPB820, OPB820S12, OPB820S7, and OPB820S5 utilize an OP140 or OP240 LED and an OP550 family sensor. Absolute Maximum Ratings (T4=25C unless otherwise noted) Storage and Operating Temperature Range ... 2.2.2.2. eee cece eee eeeee eee ee vane -40C to + 85C Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 6 sec. with soldering iron}......... 2agectt Input Diode Reverse Voltage... 6... ccc ee teen eee erat ented seat eee teneeeenepiens 20V Continuous Forward Current 2.2.0... 06. e ccc eee ees ec acces ceuucveuvereevereunes 50 mA Peak Forward Current (1 xs pulse width, 300 pps) .............cccccceceesussvecceuauecuaes 3.0A Power Dissipation ...............cccecc eee ced de ace eececuueaeeeteveuseeatrevens 100 mwi2) Output Phototransistor Collector-Emitter Voltage 1.0.0.0... cece cece ec e eee ee teense e ste ceeenateteeenebrapess 30V Emitter-Collactor Voltage... 0.0.2... cece cece eee eneeeeceerer seu teeeevenvessvrnreas OV Power Dissipation 0.0.2.0... cecsecceveeeeeentsensseeeeneevaesteuaccurenuennes 100 mw'2! Notes: [1] AMA flux is recommended. Duration can be extended to 10 sec. max. when wave soldering. [2} Derata linearly 1.33 mW/C above 25C. {3} Methanol or isopropanol alcohols are recommended as cleaning egents. Typical Perfsrmance Curves OPBs20 Normalizad Output Current Rise and Falt Tims vs Forward Current vs Load Resistance |} at - IF=20 mA (50% Quty Cycle! a o 1 p= ; Woo=5 w FE 5 RISE TM 2 FALL TIME --~ vf 3 a o +2 = 80 Pod 2 Z = a0 Weg TN 3 Le a Z Ly aS 8g z ao z - a rd ~z | | f fF - TL E fo )pmww een - 2, 6 10 15 20 25 30 35 40 00 1K 5K 10K IF - FORWARD CURRENT - mA RL - LOAD RESISTANCE - ohms Optoelectronics Division, TAW Electronic Components Group, 1215 W. Crosby Rd., Carrollton, TX 75006 (214) 323-2200, TLX 6716092 or 216849 250 OPTEK TECHNOLOGY INC ObE D Bf e7sasao ogo0347 7 i Types OPB820, OPB820S12, OPB820S7, OPB820S5 T- Ly) -73 Electrical Charactaristics (T4= 25C unless otherwise noted) Te | Parameter [ Min. | Max. | Units | Test Conditions | Input Diode . VE Forward Voltage 1.70 V | Ip=20 mA Ip Reverse Current 100 pA | Vp=2.0V Output Phototransistor | Vepiceo | Coltector-Emitter Breakdown Voltage 40 Vj ig=1.00 mA Vipnieco | Emitter-Colfectar Breakd Voltage 6.0 VV | Ile=100 pA Ice Collectar-Emitter Dark Current 100 nA | Veg=10.0 Y, IF==0, Es =0 Coupled OPB820, OPB820S12 0.4 V {ce =260 pA, IF=20 mA Veeisat} | Collector-Emitter Saturation Voltage OPBA20S7 04 V Ie = 150 pA, IF=20 mA OPa82085 04 V | Ie=125 pA, le=20 mA vero] | | m lmcurvecws OPB = 10.0 V, F=20 m Iojon) | On-State Collector Current opeponsy | 300 el Vppa100 , 20 mA oppez0ss | 170 wA | Voe=10.0 V, Ip=20 mA Typical Performance Curves OPB820S12, OPB82087, OPB820S5 Normalized Output Current Rise and Fall Time Normalized Output Current vs Input Current vs Load Resistance vs Ambient Temperature oy oS So 7 v mA > awe os soo TOV 1F=20 mA NORMALIZED TO a= tr, tt RISE AND FALL TIME pesac NORMALIZED OUTPUT CURRENT - % NORMALIZED OUTPUT CURRENT ~ % [p= 20 mA (50% Duty Cycle) weo=5 RISE TIME FALL TIME - -20 1 10 5 10 18 20 25 30 95 40 . Z 100 1K sk 10K -40 -20 @ 20 40 680 a0 IF ~ FORWARD CURRENT ~ mA Ai ~ LOAD RESISTANCE - ohms TA - AMBIENT TEMPERATURE ~ C All Assemblies Forward Current Relative Output Current Reduction in Output Currant Due ta vs Forward Voltage faput Diode vs Time LED Heeting vs Forward Current 100 <= e tee E =z eee = ts E* 95 |_ > 2 a pl = = ee | Pp 4 3 2 ES 90 2 5 a= _ Typ = E =& a5 ae E : ze a - = i =0. Sg 35 0b con) is mad tha instant LED curent is apped. The fot uk ond 20 BME a = | ght path is than Mocked with an opaque object. 30 = = seconds late the opagus object is removed nd 75 TO}ON) is read again. This curve represents the por 0 cent reduction in clot between these two al 70 1 lL 1 02 04 06 O8 10 12 14 5 10 15 20 25 30 36 40 Ve ~ FORWARD VOLTAGE - OLTS t- TIME ~ HOURS if FORWARD CURRENT ~ mA TAW reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optoelectronics Division, TRW Electronic Components Group, 1215 W. Crosby Ad., Carrollton, TX 75006 {214} 323-2200, TLX 6716032 or 215848 TAW Inc. 1985. TRW is the name and mark of TAW loc. Printad in U.S.A. 251 pincer