2N5154
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa offers:
• Screening and processing per MIL-PRF-19500 Appen di x E
• JAN level (2N5154J)
• JANTX level (2N5154JX)
• JANTXV level (2N5154JV)
• JANS level (2N5154JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• High-spee d po wer swit ching
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geom et ry 920 1
• Reference document:
MIL-PRF-19500/544
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80 Volts
Collector-Base Voltage VCBO 100 Volts
Emitter-Base Voltage VEBO 5.5 Volts
Collector Current, Continuous IC2 A
Power Dissipation, TA = 25OC
Derate linearly above 25OC PT1
5.7 W
mW/°C
Power Dissipation, TC = 25OC
Derate linearly above 25OC PT11.8
66.7 W
mW/°C
Thermal Resistance RθJA
RθJC
175
15 °C/W
Operating Junction Temperature
Storage Temperature TJ
TSTG -65 to + 200 °C
Copyright© 2006 Semicoa
Rev. D-2b 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5154
Silicon NPN Transisto
r
Data Sheet
Copyright© 2006 Semicoa
Rev. D-2b 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100 mA 80 Volts
Collector-Emitter Cutoff Current ICEO VCE = 40 Volts 50 µA
Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts,
TA = 150°C 100
µA
Collector-Emitter Cutoff Current ICES1
ICES2
VCE = 60 Volts
VCE = 100 Volts
1
1 µA
mA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 4 Volts
VEB = 5.5 Volts
1
1 µA
mA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
50
70
40
25
200
Base-Emitter Voltage VBE VCE = 5 Volts, IC = 2.5 A 1.45 Volts
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
1.45
2.20 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
0.75
1.50 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 500 mA,
f = 10 MHz 7
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 100 mA,
f = 1 kHz 50
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
f = 1 MHz 250
pF
Switching Characteristics
Storage Time
Fall Time
Saturated Turn-On Time
Saturated Turn-Off Time
ts
tf
tON
tOFF
IC = 5 A, IB1=IB2 = 500 mA,
VBEoff = 3.7 Volts, RL = 6 Ω
1.4
0.5
0.5
1.5
µs
