MMBT5401L99Z - Fairchild Semiconductor Corporation

2N5401 / MMBT5401

PNP General Purpose Amplifier

This device is designed as a general purpose amplifier and switch

for applications requiring high voltages. Sourced from Process 74.

MMBT54012N5401

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Parameter Value Units

VCEO Collec t or-Emitter V ol tage 150 V

VCBO Collec t or-Bas e Voltage 160 V

VEBO Emi tter-Base Volt age 5.0 V

ICCollect or Current - Cont i nuous 600 mA

TJ, Tstg Operating and Storage Junc tion Temperature Range -55 to +150 °C

Thermal Characteristics TA = 25°C unless otherwise noted

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Symbol Characteristic Max Units

2N5401 *MMBT5401

PDTot al D evice Dissi pation

Derate above 25°C625

5.0 350

2.8 mW

mW/°C

RθJC Therm al R esistance, Junction t o Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

CBETO-92

SOT-23

Mark: 2L

 2000 Fairchild Semiconductor International 2N5401/MMBT5401 Rev A

2N5401 / MMBT5401

Electrical Characteristics TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

(

)

CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 150 V

(

)

CBO Collector-Base Breakdown Voltage IC = 100

A, IE = 0 160 V

(

)

EBO Emitter-Base Breakdown Voltage IE = 10

A, IC = 0 5.0 V

ICBO Collector Cutoff Current VCB = 120 V, IE = 0

VCB = 120 V, IE = 0, TA = 100°C50

50 nA

IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA

ON CHARACTERISTICS*

hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V

IC = 10 mA, VCE = 5.0 V

IC = 50 mA, VCE = 5.0 V

50 240

VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

IC = 50 mA, IB = 5.0 mA 0.2

0.5 V

VBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

IC = 50 mA, IB = 5.0 mA 1.0

1.0 V

SMALL SIGNAL CHARACTERISTICS

fTCurrent Gain - Bandw idth Pro duct IC = 10 mA, VCE = 10 V,

f = 100 MHz 100 300 MHz

Cobo Output Capacitance VCB = 10 V, IE = 0,

f = 1.0 MHz 6.0 pF

NF Noise Figure IC = 250

A, VCE = 5.0 V,

RS = 1.0 kΩ,

f = 10 Hz to 15.7 kHz

8.0 dB

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2

Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p

Itf=0 Vtf=0 Xtf=0 Rb=10)

Symbol Parameter Test Conditions Min Max Units

PNP General Purpose Amplifier

(continued)

2N5401 / MMBT5401

Typical Characteristics

PNP General Purpose Amplifier

(continued)

Collector-Emitter Saturation

Voltage vs Collector Current

P74

0.1 1 10 100

0.1

0.2

0.3

0.4

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

β = 10

125 ºC

- 40 ºC

25 °C

Base-Emitter Saturation

Voltage vs Collector Current

0.1 1 10 100

0.2

0.4

0.6

0.8

I - COLLEC T OR CURRE NT (mA)

V - BASE-EMITTER VOLT AGE (V)

BESAT

β = 10

125 ºC

- 40 ºC

25 °C

Base-Emitter ON Voltage vs

Collector Current

0.1 1 10 100

0.2

0.4

0.6

0.8

I - COLLECT OR CURRENT (mA)

V - BASE-EMITTER ON VOLTAGE (V)

BE(ON)

125 ºC

- 40 ºC

25 °C

V = 5V

Typical Pulsed Cu rrent Gain

vs Collector Current

0.0001 0.001 0.01 0.1 1

100

150

200

I - COLLECTOR CURRENT (A)

h - TYPICAL PULSED CURRENT GAIN

- 40 ºC

25 °C

V = 5V

125 °C

Collector-Cutoff Current

vs A mbient Temperature

25 50 75 100 125 150

0.1

100

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

V = 100V

CBO

Collector-Emitter Breakdown

Voltage with Resistan ce

Between Emitter-Base

0.1 1 10 100 1000

170

180

190

200

210

220

RESISTANCE (k )

BV - BREAKDOWN VOLTAGE (V)

Ω

CER

2N5401 / MMBT5401

Typical Characteristics (continued)

PNP General Purpose Amplifier

(continued)

Input and Output Capacitance

vs Reverse Voltage

0.1 1 10 100

V - REVERSE BIAS VOLTAGE(V)

CAPACITANCE (pF)

f = 1.0 MHz

Power Dissipation vs

Ambien t Temper ature

0 25 50 75 100 125 150

100

200

300

400

500

600

700

TEMPERAT URE ( C)

P - POWER DISSIPATION (mW)

TO-92

SOT-23

TO-92 Tape and Reel Data and Package Dimensions

September 1999, Rev. B

TO-92 Packaging

Configuration: Figure 1.0

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

2000 units per

EO70 box for

std option

FSCINT Label

530mm x 130m m x

83mm

Inter med iate box

10,000 units maximum

per

intermediate box

for std option

FSCINT Label

114mm x 102m m x 51mm

Immed iate Box

Anti-static

Bubble Sheets

(TO-92) BULK PACKING INFORMATION

EOL

CODE DESCRIPTION LEADCLIP

DIMENSION QUANTITY

J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX

J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX

NO EOL

CODE TO-92 STANDARD

STRAIGHT NO LE A DCLIP 2.0 K / BOX

BULK OPTION

See Bulk Packing

Information table

375mm x 267m m x 375mm

Inter med iate Box

FSCINT

Label

Customized

Label

333mm x 231m m x 183mm

Inter med iate Box

FSCINT

Label

Customized

Label

TO-92 TNR/AMMO PACKING INFROMATION

Pack in g Style Qu antity EOL code

Reel A 2,000 D26Z

E2,000 D27Z

Ammo M 2,000 D74Z

P2,000 D75Z

U nit weight = 0.22 gm

Reel wei g ht with comp o nents = 1.04 kg

Ammo w e ight with componen ts = 1.02 kg

Max quantity per interme d iate box = 10,000 units

F63TNR

Label

5 Ammo boxes per

Inter med iate Box

Customized

Label

327mm x 158m m x 135mm

Immed iate Box

LOT: CBVK741B019

NSID: PN2222N

D/C1:

D9842 SPEC REV: B2

SPEC:

QTY: 10000

QA REV:

FAIRCHILD SEMICONDUCTOR CORPORATI ON

HTB:B

(FSCINT)

F63TNR

Label

Customized

Label

5 Reels per

Inter med iate Box

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV:

SPEC:

QTY: 2000

D/C2: QTY2: CPN: N/F: F (F6 3TNR) 3

F63TNR Label sample

FSCINT Label sample

5 EO70 boxes per

intermediate Box

ustomized

Label

TO-92 Tape and Reel Data and Package Dimensions, continued

September 1999, Rev. B

TO-92 Reeling Style

Configuration: Figure 2.0

Style “A”, D26Z, D70 Z (s/h)

Machine O ption “A” (H)

Style “E ”, D27 Z, D 71Z (s/ h)

Machine O ption “E” (J)

FIRST WIRE OFF IS EMITTER

ADHESIVE TAPE IS ON THE TOP SIDE

FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE

D75Z (P)

FIRST WIRE OFF IS COLLECTOR

ADHESIVE TAPE IS ON THE TOP SIDE

FLAT OF TRANSISTOR IS ON TOP

ORDER STYLE

D74Z (M)

TO-92 Radial Ammo Packaging

Configuration: Figure 3.0

FIRST WIRE OFF IS EMITTER (ON PKG. 92)

ADHESIVE TAPE IS ON BOTTOM SIDE

FLAT OF TRANSISTOR IS ON BOTTOM

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)

ADHESIVE TAPE IS ON BOTTOM SIDE

FLAT OF TRANSISTOR IS ON TOP

ITEM DESCRIPTION

Base of Package to Lead Bend

Com p on en t He ig ht

Lead Clinc h Height

Component Base Height

Component Alignment ( side/side )

Component Alignment ( front/back )

Com p on en t Pi tc h

Feed Hole Pitch

Hole Center to First Lead

Hole Center to Component Center

Lead Spread

Lead Thickness

Cut Lead Length

Taped Lead Length

Taped Lead Th ickness

Carrier Tape Thick ness

Carrier Tape Width

Hold - down Tape Width

Hold - down Tape position

Feed Hole Position

Sprocket Hole Diameter

Lead Spring O ut

SYMBOL

F1/F2

DIMENSION

0. 09 8 (m ax )

0. 92 8 (+ /- 0.025)

0. 63 0 (+ /- 0.020)

0. 74 8 (+ /- 0.020)

0. 04 0 (m ax )

0. 03 1 (m ax )

0. 50 0 (+ /- 0.020)

0. 50 0 (+ /- 0.008)

0.150 (+0.009, -0.010)

0. 24 7 (+ /- 0.007)

0. 10 4 (+ /- 0 . 01 0)

0.018 (+0.002, -0.003)

0. 42 9 (m ax )

0.209 (+0.051, -0.052)

0. 03 2 (+ /- 0.006)

0. 02 1 (+ /- 0.006)

0.708 (+0.020, -0.019)

0. 23 6 (+ /- 0.012)

0. 03 5 (m ax )

0. 36 0 (+ /- 0.025)

0.157 (+0.008, -0.007)

0. 00 4 (m ax )

Note : All dimensions are in inch es.

ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM

Ree l Diam eter D1 13 . 9 75 14. 02 5

Arb or Hol e Di am et er (St a nd ard) D2 1. 16 0 1.200

(Small Hole) D2 0.650 0.700

Core Diameter D3 3.100 3.300

Hub Recess Inner Diameter D4 2.700 3.100

Hub Recess Depth W1 0.370 0.570

Flange to Flange Inner Width W2 1.630 1.69 0

Hub to Hub Center Width W3 2. 090

Not e: All dime ns ions a re inch es

TO-92 Tape and Reel Taping

Dimension Configuration: Figure 4.0

H1 HO

P1 F1

PPd

WO W2

TO-92 Reel

Configuration: Figure 5.0

User Direction of Feed

SENSITIVE DE VICES

ELECTROSTATIC

Customi zed Label

W1 W3

F63 TNR Label

TO-92 Tape and Reel Data and Package Dimensions, continued

July 1999, Rev. A

TO-92 (FS PKG Code 92, 94, 96)

TO-92 T ape and Reel Data and Package Dimensions

January 2000, Rev. B

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.1977

TRADEMARKS

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST

FASTr™

GTO™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

VCX™

HiSeC™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6



Rev. E

