© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 1 1Publication Order Number:
NVTFS4C25N/D
NVTFS4C25N
Power MOSFET
30 V, 17 mW, 22 A, Single N−Channel, m8FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•NVTFS4C25NWF − Wettable Flanks Product
•NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Notes 1, 3, 5) Steady
State
TA = 25°CID10.1 A
TA = 85°C 7.8
Power Dissipation RqJA
(Notes 1, 3, 5) TA = 25°CPD3.0 W
TA = 85°C 1.8
Continuous Drain
Current RyJC
(Notes 1, 2, 4, 5) Steady
State
TC = 25°CID22.1 A
TC = 85°C 17.1
Power Dissipation
RyJC (Notes 1, 2, 4, 5) TC = 25°CPD14.3 W
TC = 85°C 8.6
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 90 A
Operating Junction and Storage Temperature TJ,
Tstg −55 to
+175 °C
Source Current (Body Diode) IS14 A
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, IL = 6.7 Apk, L = 0.5 mH) EAS 11.2 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values
shown; they are not constants and are valid for the specific conditions noted.
2. Psi (y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to a single case surface.
3. Surface−mounted on FR4 board using 650 mm2, 2 oz. Cu Pad.
4. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
5. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
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V(BR)DSS RDS(on) MAX ID MAX
30 V 17 mW @ 10 V 22 A
N−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
26.5 mW @ 4.5 V
(Note: Microdot may be in either location)
1
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
XXXX
AYWWG
G
D
D
D
D
S
S
S
G
See detailed ordering and shipping information on page 6 o
f
this data sheet.
ORDERING INFORMATION
NVTFS4C25N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) (Notes 6, 7 and 9) YqJC 10.5 °C/W
Junction−to−Ambient – Steady State (Notes 6 and 8) RqJA 50
6. The entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific
conditions noted.
7. Psi (y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to a single case surface.
8. Surface−mounted on FR4 board using 650 mm2, 2 oz. Cu Pad.
9. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ15.3 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V TJ = 25°C 1.0 mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Threshold Temperature Coefficient VGS(TH)/TJ−4.5 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 10 A 13 17 mW
VGS = 4.5 V ID = 9 A 21 26.5
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 23 S
Gate Resistance RGTA = 25°C 1.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 15 V
500
pF
Output Capacitance COSS 295
Reverse Transfer Capacitance CRSS 85
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.170
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 20 A
5.1
nC
Threshold Gate Charge QG(TH) 0.9
Gate−to−Source Charge QGS 1.7
Gate−to−Drain Charge QGD 2.7
Gate Plateau Voltage VGP 3.3 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 20 A 10.3 nC
SWITCHING CHARACTERISTICS (Note 11)
T urn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 10 A, RG = 3.0 W
8.0
ns
Rise Time tr32
T urn−Off Delay Time td(OFF) 10
Fall Time tf3.0
T urn−On Delay Time td(ON)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
4.0
ns
Rise Time tr25
T urn−Off Delay Time td(OFF) 13
Fall Time tf2.0
10.Pulse Test: pulse width v 300 ms, duty cycle v 2%.
11.Switching characteristics are independent of operating junction temperatures.
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A TJ = 25°C 0.87 1.2 V
TJ = 125°C 0.75
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
18.2
ns
Charge Time ta9.8
Discharge Time tb8.4
Reverse Recovery Charge QRR 5.7 nC
10.Pulse Test: pulse width v 300 ms, duty cycle v 2%.
11.Switching characteristics are independent of operating junction temperatures.
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4
TYPICAL CHARACTERISTICS
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
−50 −25 0 25 50 75 100 125 150 175
3.4 V
3.6 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
5210
0
5
10
30
4.03.53.02.01.51.0
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
9.08.07.0 106.05.04.03.0
0.002
0.012
5030 4020
0.015
0.005
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3025201510
5
1
100
1000
10000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
4.0 V
3.2 V
3.0 V
2.8 V
4.5 V to 10 V
TJ = 25°C
VDS = 5 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.022
0.035
ID = 30 A
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
ID = 10 A
VGS = 10 V VGS = 0 V
TJ = 85°C
TJ = 150°C
TJ = 125°C
2.5
0.032
0.042
35
10
3.8 V
30
20
30
40
10
5.00.50
0.052
4.5
15
25
0.025
0.045
4
40
20
4.2 V
10
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5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
25201510 3050
0
200
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
0.90.80.70.60.50.4
0
2
6
10
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
0.1
1
10
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
QT
VDD = 15 V
ID = 15 A
VGS = 10 V
td(on)
tr
tfTJ = 25°C
TJ = 125°C
VGS = 0 V
NVTFS4C25N FBSOA
TC = 25°C, VGS = 10 V
dc
500
100
300
400
1.0
0
2
046812
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 20 A
12
16
20
0.01 ms
102
600
700
100
800
6
8
10
4Qgs Qgd
td(off)
0.1
4
8
14
18
0.1 ms
1 ms
10 ms
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6
TYPICAL CHARACTERISTICS
Figure 12. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
Figure 13. GFS vs. ID
ID (A)
201550
0
5
30
GFS (S)
10 25
15
30
20
25
40
Figure 14. Avalanche Characteristics
PULSE WIDTH (SECONDS)
1.E−031.E−041.E−06
1
10
100
ID, DRAIN CURRENT (A)
1.E−05
TJ(initial) = 85°C
10
35
@ 1% Duty Cycle
@ 2% Duty Cycle
@ 5% Duty Cycle
@ 10% Duty Cycle
@ 20% Duty Cycle
@ 50 % Duty Cycle
RqJA Single Pulse
RYJA Single Pulse
YJC, infinite heat sink assumption
qJA, 650 mm2, 2 oz Cu Pad, single layer on FR4
TJ(initial) = 25°C
ORDERING INFORMATION
Device Marking Package Shipping†
NVTFS4C25NTAG 4V25 WDFN8
(Pb−Free) 1500 / Tape & Reel
NVTFS4C25NWFTAG 25WF WDFN8
(Pb−Free) 1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M1.40 1.50
q0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994
.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00 −−−
b0.23 0.30
c0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e0.65 BSC
G0.30 0.41
K0.65 0.80
L0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
b
A0.10 BC
0.05 C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and solderin
g
details, please download the ON Semiconductor Soldering an
d
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
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NVTFS4C25N/D
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