12/2005
AWT6276R
HELPTM PCS/WCDMA 3.4 V/29.5 dBm
Linear Power Amplifier Module
PRELIMINARY DA T A SHEET - Rev 1.4
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
Figure 1: Block Diagram
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50 Ω
system.
FEATURES
•InGaP HBT Technology
•High Efficiency:
45 % @ POUT = +29.5 dBm
21 % @ POUT = +16 dBm
16 % @ POUT = +7 dBm
•Low Quiescent Current: 15 mA
•Low Leakage Current in Shutdown Mode: <1 µA
•VREF = +2.85 V (+2.75 V min over temp)
•Optimized for a 50 Ω System
•Low Profile Miniature Surface Mount Package:
1.1 mm Max
•RoHS Compliant Package, 250 oC MSL-3
•HSDPA Compliant (no backoff)
APPLICATIONS
•Dual Band WCDMA Wireless Handsets
•Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6276 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6275 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
AWT6276R
2PRELIMINARY DATA SHEET - Rev 1.4
12/2005
AWT6276R
VCC
RFOUT
VREF
RFIN
VMODE
GND
1
GND
10
2
3
4
56
9
8
7
VCC
GND
GND
GND
GND
Figure 2: Pinout (X-ray T op View)
T able 1: Pin Description
NIP EMAN NOITPIRCSED
1V
CC
egatloVylppuS
2FR
NI
tupnIFR
3DNGdnuorG
4V
EDOM
egatloVlortnoCedoM
5V
FER
egatloVecnerefeR
6DNGdnuorG
7DNGdnuorG
8FR
TUO
tuptuOFR
9DNGdnuorG
01V
CC
egatloVylppuS
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
A WT6276R
3
ELECTRICAL CHARACTERISTICS
T able 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
T able 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
RETEMARAP NIM XAM TINU
V(egatloVylppuS
CC
)05+V
V(egatloVlortnoCedoM
EDOM
)05.3+V
V(egatloVecnerefeR
FER
)05.3+V
P(rewoPtupnIFR
NI
)-01+mBd
T(erutarepmeTegarotS
GTS
)04-051+C°
Notes:
(1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
(2) For operation at 110 oC (TC), POUT is derated by 1.0 dB.
RETEMARAP NIM PYT XAM TINU STNEMMOC
)f(ycneuqerFgnitarepO0581-0191 zHM
V(egatloVylppuS
CC
)2.3+-4.3+ 5.1+ 2.4+-VP
TUO
< mBd5.92+
P
TUO
< mBd7
V(egatloVecnerefeR
FER
)57.2+ 058.2+ -59.2+ 5.0+ V"no"AP "nwodtuhs"AP
V(egatloVlortnoCedoM
EDOM
)
3.2+058.2+ -1.3+ 5.0+ VedoMsaiBwoL edoMsaiBhgiH
P(rewoPtuptuOFR
TUO
)
PPG3 AesaCAPDSH BesaCAPDSH CesaCAPDSH
0.92+
)1(
0.82+
)1(
0.72+
)1(
5.62+
)1(
5.92+ 5.82+ 5.72+ 0.72+
-
-
-
-
mBd 51/1<β
c
/β
d
< 51/21
51/31<β
c
/β
d
< 8/51
7/51<β
c
/β
d
< 0/51
T(erutarepmeTesaC
C
)02--011+
)2(
C°
4PRELIMINARY DATA SHEET - Rev 1.4
12/2005
AWT6276R
T able 4: Electrical Specifications
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 ΩΩ
ΩΩ
Ω system)
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
RETEMARAP NIM PYT XAM TINU STNEMMOC
niaG 5.42 0.41 0.31
0.72 0.61 0.51
0.92 0.81 0.71 Bd
P
TUO
V,mBd5.92+=
EDOM
V0=
P
TUO
V,mBd61+=
EDOM
V58.2+=
P
TUO
V,mBd7+=
CC
,V5.1=
V
EDOM
V58.2+=
tesffozHM5ta1RLCA
)1(
-
-
-
14- 04- 04-
83- 83- 83- cBd P
TUO
V,mBd5.92+=
EDOM
V0=
P
TUO
V,mBd61+=
EDOM
V58.2+=
P
TUO
V,mBd7+=
CC
,V5.1=
V
EDOM
V58.2+=
tesffozHM01ta2RLCA
-
-
-
65- 25- 85-
84- 84- 84- cBd P
TUO
V,mBd5.92+=
EDOM
V0=
P
TUO
V,mBd61+=
EDOM
V58.2+=
P
TUO
V,mBd7+=
CC
,V5.1=
V
EDOM
V58.2+=
ycneiciffEdeddA-rewoP
)1(
048131
541261
-
-
-%P
TUO
V,mBd5.92+=
EDOM
V0=
P
TUO
V,mBd61+=
EDOM
V58.2+=
P
TUO
V,mBd7+=
CC
,V5.1=
V
EDOM
V58.2+=
)qcI(tnerruCtnecseiuQ -5122AmV
EDOM
V,V58.2+=
CC
V4.3=
tnerruCecnerefeR-47AmVhguorht
FER
nip
tnerruClortnoCedoM-3.01AmVhguorht
EDOM
V,nip
EDOM
V58.2+=
tnerruCegakaeL-1<5 AµV
CC
V,V2.4+=
FER
,V0=
V
EDOM
V0=
dnaBevieceRniesioN-731-531-zH/mBdzHM0991otzHM0391
scinomraH of2 of4,of3 -
-54- 05- 53- 53- cBd
ecnadepmItupnI--1:2RWS
V
leveLtuptuOsuoirupS )stuptuosuoirupslla( --07-cBd
P
TUO
< mBd5.92+ 1:5<RWSVdaoldnab-nI 1:01<RWSVdaoldnab-fo-tuO gnitarepollarevoseilppA snoitidnoc
onhtiwssertshctam
simdaoL eruliafronoitadargedtnenamrep 1:01-- RWSVegnargnitarepollufrevoseilppA
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
A WT6276R
5
APPLICA TION INFORMA TION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
T able 5: Bias Control
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
Three operating modes are recommended to
optimize current consumption. High Bias operating
mode is for POUT levels > 16 dBm. At POUT <16dBm,
the P A should be “Mode Switched” to Low Bias Mode.
For POUT levels < ~7 dBm, the VCC can be switched
to 1.5 V (Low Bias Mode is also used for this POUT
range).
C3
0.01µF
C4
2.2µF ceramic
GND
at slug
RF IN
29
1
6
7
10
8
5
4
3
VCC
VMODE
GNDRFIN
GND
VCC
GND
VREF GND
RFOUT
VCC2
C1
0.01µF
VCC1
VMODE
VREF
C2
0.01µF
RF OUT
Figure 3: Application Circuit Schematic
NOITACILPPA
P
TUO
SLEVEL
SAIB
EDOM V
FER
V
EDOM
V
CC
rewopwol-AMDC<mBd7+woLV58.2+V58.2+>V5.1+
rewopdem-AMDC<
mBd61+woLV58.2+V58.2+V2.4-2.3+
rewophgih-AMDC>
mBd61+hgiHV58.2+V0V2.4-2.3+
nwodtuhS-nwodtuhSV0V0V2.4-2.3+
6PRELIMINARY DATA SHEET - Rev 1.4
12/2005
AWT6276R
Figure 5: Branding Specification
Figure 4: M20 Package Outline - 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module
P ACKAGE OUTLINE
76R
76R
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
A WT6276R
7
COMPONENT P ACKAGING
Figure 7: T ape & Reel Packaging
T able 6: T ape & Reel Dimensions
EPYTEGAKCAP HTDIWEPAT HCTIPTEKCOP YTICAPACLEER AIDLEERXAM
mm1.1xmm4xmm4mm21mm80052"31
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
PRELIMINARY DATA SHEET - Rev 1.4
12/2005
8
AWT6276R
ORDERING INFORMA TION
REDRO REBMUN ERUTAREPMET EGNAR EGAKCAP NOITPIRCSED GNIGAKCAPTNENOPMOC
8P02MR6726TWA02-
o
011+otC
o
CniP01tnailpmoCSHoR mm1.1xmm4xmm4 eludoMtnuoMecafruS leeRrepseceip0052,leeRdnaepaT
