Preliminary Technical Information IXFK32N100Q3 IXFX32N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = RDS(on) trr 1000V 32A 320m 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 32 A IDM TC = 25C, Pulse Width Limited by TJM 96 A IA TC = 25C 32 A EAS TC = 25C 3 J dV/dt IS IDM, VDD VDSS, TJ 150C 50 V/ns PD TC = 25C 1250 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C z 1.13/10 Nm/lb.in. z 20..120 /4.5..27 N/lb. z 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D S Tab PLUS247 (IXFX) G z VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V 200 nA IDSS VDS = VDSS, VGS = 0V 50 A 2 mA RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 TJ = 125C (c) 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications V 6.5 Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z BVDSS D = Drain Tab = Drain Features z Characteristic Values Min. Typ. Max. Tab S G = Gate S = Source z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D V z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 320 m DS100300A(07/11) IXFK32N100Q3 IXFX32N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 0.5 * ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 32 S 9940 pF 766 pF 64 pF 0.15 45 ns 15 ns 54 ns Dim. 12 ns 195 nC 60 nC 78 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) Qg(on) Qgs TO-264 AA Outline VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.10 C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 16A, -di/dt = 100A/s 1.2 12.3 VR = 100V, VGS = 0V Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 PLUS 247TM Outline Terminals: 1 - Gate 2 - Drain 3 - Source Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 300 ns C A 1. Pulse test, t 300s, duty cycle, d 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK32N100Q3 IXFX32N100Q3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 32 70 VGS = 10V VGS = 10V 28 60 8V 24 ID - Amperes ID - Amperes 50 20 16 7V 12 8V 40 30 20 8 7V 10 4 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 32 3.0 VGS = 10V VGS = 10V 28 2.6 R DS(on) - Normalized 7V 24 ID - Amperes 20 VDS - Volts VDS - Volts 20 16 12 6V 8 2.2 I D = 32A I D = 16A 1.8 1.4 1.0 0.6 4 5V 0 0.2 0 5 10 15 20 25 -50 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 35 VGS = 10V 2.6 30 TJ = 125C 2.4 25 2.2 ID - Amperes R DS(on) - Normalized 50 TJ - Degrees Centigrade 2.0 1.8 1.6 1.4 20 15 10 1.2 5 TJ = 25C 1.0 0.8 0 0 10 20 30 40 ID - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK32N100Q3 IXFX32N100Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 70 45 TJ = - 40C 60 40 50 30 g f s - Siemens ID - Amperes 35 TJ = 125C 25C 25 - 40C 20 15 25C 40 125C 30 20 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 5 10 15 20 VGS - Volts 25 30 35 40 45 50 140 160 180 200 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 10 90 9 80 8 70 7 VDS = 500V VGS - Volts IS - Amperes I D = 16A 60 50 40 TJ = 125C 30 I G = 10mA 6 5 4 3 TJ = 25C 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 VSD - Volts 100 120 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 100,000 RDS(on) Limit f = 1 MHz 100s Ciss 10,000 10 ID - Amperes Capacitance - PicoFarads 80 QG - NanoCoulombs Coss 1,000 1 100 TJ = 150C TC = 25C Single Pulse Crss 1ms 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXFK32N100Q3 IXFX32N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - C / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8) 7-21-11-A