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FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
www.fairchildsemi.com
1
March 2015
FDD86252
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 27 A, 52 mΩ
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A
Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
DC - DC Conversion
G
S
D
TO-252
D-PAK
(TO-252)
D
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 150 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous TC = 25 °C 27
A -Continuous TA = 25 °C (Note 1a) 5
-Pulsed (Note 4) 30
EAS Single Pulse Avalanche Energy (Note 3) 72 mJ
PD
Power Dissipation TC = 25 °C 89 W
Power Dissipation TA = 25 °C (Note 1a) 3.1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 1.4 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD86252 FDD86252 D-PAK(TO-252) 13 ’’ 16 mm 2500 units
FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
www.fairchildsemi.com
2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C 104 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.1 4.0 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -10 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = 10 V, ID = 5 A 41 52
mΩVGS = 6 V, ID = 4 A 49 72
VGS = 10 V, ID = 5 A,TJ = 125 °C 81 103
gFS Forward Transconductance VDS = 10 V, ID = 5 A 15 S
Ciss Input Capacitance VDS = 75 V, VGS = 0 V,
f = 1 MHz
741 985 pF
Coss Output Capacitance 78 130 pF
Crss Reverse Transfer Capacitance 4.2 10 pF
RgGate Resistance 0.4 Ω
td(on) Turn-On Delay Time
VDD = 75 V, ID = 5 A,
VGS = 10 V, RGEN = 6 Ω
8.3 17 ns
trRise Time 1.8 10 ns
td(off) Turn-Off Delay Time 14 25 ns
tfFall Time 310ns
QgTotal Gate Charge VGS = 0 V to 10 V
VDD = 75 V,
ID = 5 A
11.3 16 nC
QgTotal Gate Charge VGS = 0 V to 5 V 6.3 9 nC
Qgs Gate to Source Charge 3.4 nC
Qgd Gate to Drain “Miller” Charge 2.6 nC
VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 5 A (Note 2) 0.80 1.3 V
VGS = 0 V, IS = 2.6 A (Note 2) 0.77 1.2
trr Reverse Recovery Time IF = 5 A, di/dt = 100 A/μs 60 97 ns
Qrr Reverse Recovery Charge 72 115 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 135 V, VGS = 10 V.
4: Pulsed Drain current is tested at 300 μs with 2% duty cycle. For repetitive pulses, the pulse width is limited by the maximum junction temperature.
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
a) 96 °C/W when mounted on
a minimum pad
b)
FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
012345
0
5
10
15
20
25
30
VGS = 5.5 V
VGS = 5 V
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 6.5 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 5 10 15 20 25 30
0
1
2
3
4
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 6.5 V
VGS = 6 V
VGS = 5.5 V
VGS = 10 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID = 5 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
45678910
0
50
100
150
200
250
TJ = 125 oC
ID = 5 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
234567
0
5
10
15
20
25
30
TJ = 25 oC
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
30
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current
FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
www.fairchildsemi.com
4
Figure 7.
036912
0
2
4
6
8
10
ID = 5 A
VDD = 50 V
VDD = 100 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
1
10
100
1000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
5
10
15
20
25
30
VGS = 6 V
RθJC = 1.4 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 11.
1 10 100 400
0.05
0.1
1
10
50
10 ms
100 μs
DC
1 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.4 oC/W
TC = 25 oC
F or w ar d B i a s Sa f e
Operating Area
Figure 12.
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET
©2012 Fairchild Semiconductor Corporation
FDD86252 Rev.1.6
www.fairchildsemi.com
5
Figure 13. Junction-to-Case Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 1
0.01
0.1
1
SINGLE PULSE
RθJC = 1.4 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
Typical Characteristics TJ = 25 °C unless otherwise noted
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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