AND0041R Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control FEATURES * * * * * * * * PRELIMINARY DATA SHEET - REV 1.3 Internal Reference Voltage Integrated Power Control Scheme InGaP HBT Technology ESD Protection on All Pins (2.5 kV) Low profile 1.3 mm Small Package Outline 7 mm x 7 mm EGPRS Capable (class 12) RoHS Compliant Package, 250 oC MSL-3 AND 004 GMSK MODE * Integrated power control (CMOS) * +35.5 dBm GSM850/900 Output Power * +33.5 dBm DCS/PCS Output Power * 55 % GSM850/900 PAE * 53 % DCS/PCS PAE * Power control range > 50 dB EDGE MODE * +29 dBm GSM850/900 Output Power * +28.5 dBm DCS/PCS Output Power * 25 % GSM850/900 PAE * 30 % DCS/PCS PAE * 64 dB Typical ACPR (400 kHz) * 74 dB Typical ACPR (600 kHz) 1R M11 Package 18 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module APPLICATIONS * Dual/Tri/Quad Band Handsets and PDAs * Dual/Tri/Quad Band Wireless Data Cards PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using an open loop polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for excellent EDGE efficiency, power, and linearity in a Polar loop environment while maintaining high efficiency in the GSM/GPRS mode. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier's power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are internally matched to 50. DCS/PCS_IN DCS/PCS DCS/PCS_OUT BS TX_EN VBATT CEXT Bias/Power Control VRAMP GSM850/900_OUT GSM850/900_IN GSM850/900 Figure 1: Block Diagram 01/2006 AND0041R BS GND 1 VCC2 DCS/PCS_IN 18 17 16 DCS/PCS_OUT 2 15 GND TX_EN 3 14 GND VBATT 4 13 VCC_OUT CEXT 5 12 GND VRAMP 6 11 GND GSM_IN 7 10 GSM_OUT 9 VCC2 GND 8 Figure 2: Pinout (X - ray Top View) Table 1: Pin Description PIN 1 2 NAME DESCRIPTION PIN NAME 10 GSM_OUT Band Select Logic Input 11 GND Ground TX Enable Logic Input 12 GND Ground DCS/PCS_IN DCS/PCS RF Input DESCRIPTION GSM850/900 RF Output 2 BS 3 TX_EN 4 VBATT Battery Supply Connection 13 VCC_OUT 5 C EXT Bypass 14 GND Ground 6 VRAMP Analog Signal used to control the output power 15 GND Ground 7 GSM_IN GSM850/900 RF Input 16 8 VCC2 VCC Control Input for GSM850/900 Pre-amplifier 17 GND Ground 9 GND Ground 18 VCC2 VCC Control Input for DCS/PCS Pre-amplifier Control Voltage Output which must be connected to VCC2, no decoupling DCS/PCS_OUT DCS/PCS RF Output PRELIMINARY DATA SHEET - Rev 1.3 01/2006 AND0041R ELECTRICAL CHARACTERISTICS Table 2: Absolute Maximum Ratings PARAMETER MIN MAX UNITS Supply Voltage (VBATT) - +7 V RF Input Power (RFIN) - 11 dB m Control Voltage (VRAMP) -0.3 1.8 V Storage Temperature (TSTG) -55 150 C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. VCC2 >+2500 V <-2500 V GND 18 17 16 DCS/PCS_OUT >+2500 V <-2500 V 2 15 GND TX_EN >+2500 V <-2500 V 3 14 GND VBATT >+2500 V <-2500 V 4 13 VOUT >+2500 V <-2500 V CEXT >+2500 V <-2500 V 5 12 GND VRAMP >+2500 V <-2500 V 6 11 GND GSM_IN >+1500 V <-1500 V 7 10 GSM_OUT >+2500 V <-2500 V DCS/PCS_IN >+2500 V <-2500 V 1 BS >+2500 V <-2500 V GND 8 9 VCC2 >+2500 V <-2500 V GND Figure 3: ESD Pin Rating ELECTROSTATIC DISCHARGE SENSITIVITY The AND0041R part was tested to determine the ESD sensitivity of each package pin with respect to ground. All the package pins were subjected to an ESD pulse event using the Human Body Model outlined in JESD22-A114C.01 in either polarity with re- spect to ground. The pre and post test I-V characteristics of each pin are recorded. The ratings on each pin require that it sustain the ESD event and show no degradation. PRELIMINARY DATA SHEET - Rev 1.3 01/2006 3 AND0041R Table 4: Operating Conditions PARAMETER MIN TYP MAX UNITS Case temperature (TC) -20 - 85 C Supply voltage (VBATT) 3.0 3.5 4.8 V - 1 10 mA 0.2 - 1.6 V Turn on Time (TON) - - 1 ms VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dB Turn Off Time (TOFF) - - 1 ms VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dB Rise Time (TRISE) - - 1 ms POUT = -10 dBm Y PMAX (within 0.2 dB) Fall Time (TFALL) - - 1 ms POUT = PMAX Y -10 dBm (within 0.2 dB) VRAMP Input Capacitance - 3 - pF VRAMP Input Current - - 10 mA Duty Cycle - - 50 % Power supply leakage current Control Voltage Range COMMENTS VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW No RF applied The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Table 5: Digital Inputs PARAMETER SYMBOL MIN TYP MAX UNITS Logic High Voltage VIH 1.2 - 3.0 V Logic Low Voltage VIL - - 0.5 V Logic High Current |IIH| - - 30 mA Logic Low Current |IIL| - - 30 mA Table 6: Logic Control Table OPERATIONAL MODE BS T X _E N GSM850/900 LOW HIGH DCS/PCS HIGH HIGH - LOW PA DISABLED 4 PRELIMINARY DATA SHEET - Rev 1.3 01/2006 AND0041R Table 7: Electrical Characteristics for GSM850 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 824 - 849 MHz 0 3 5 dB m Output Power (PMAX) 34.5 35.8 - dB m Freq = 824 to 849 MHz Degraded Output Power (POUT) 32.8 33.8 - dB m VBATT = 3.0 V, TC = 85 C PIN = 0 dBm 48 53 - % Forward Isolation 1 - -36 -30 dB m TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -30 -20 dB m TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Cross Isolation (2Fo, 3Fo @ DCS/PCS port) - -27 -20 dB m POUT < 34.5 dBm Second Harmonic - -20 -10 dB m POUT < 34.5 dBm Third Harmonic - -40 -15 dB m POUT < 34.5 dBm n * fo (n > 4), Fo 12.75 GHz - -30 -10 dB m POUT < 34.5 dBm Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMENTS Freq = 824 to 849 MHz VSWR = 8:1 All Phases , POUT < 34.5 dBm Stability Ruggedness - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -84 -82 dB m Input Return Loss - 1.5:1 2.5:1 VSWR POUT < 34.5 dBm FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.5 dBm POUT < 34.5 dBm PRELIMINARY DATA SHEET - Rev 1.3 01/2006 5 AND0041R Table 8: Electrical Characteristics for GSM850 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25% ZIN = ZOUT = 50 , TC = 25 C, BS = LOW, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 824 - 849 MHz Input Power 0 3 5 dB m PAE 20 25 - % AC PR 200 kHz 400 kHz 600 kHz 1800 kHz - -39 -62 -74 -74 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency 6 ( FIN ) COMMENTS FIN = 824 to 849 MHz POUT set = +29 dBm PRELIMINARY DATA SHEET - Rev 1.3 01/2006 AND0041R Table 9: Electrical Characteristics for GSM900 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 880 - 915 MHz 0 3 5 dB m Output Power (PMAX) 34.5 35.5 - dB m Freq = 880 to 915 MHz Degraded Output Power (POUT) 32.5 33.5 - dB m VBATT = 3.0 V, TC = 85 C PIN = 0 dBm 50 55 - % Forward Isolation 1 - -35 -30 dB m TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -30 -20 dB m TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Cross Isolation (2Fo, 3Fo @ DCS/PCS port) - -29 -20 dB m POUT < 34.5 dBm Second Harmonic - -25 -10 dB m POUT < 34.5 dBm Third Harmonic - -40 -15 dB m POUT < 34.5 dBm n * fo (n > 4), Fo [ 12.75 GHz - -29 -8 dB m POUT < 34.5 dBm Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMENTS Freq = 880 to 915 MHz VSWR = 8:1 All Phases , POUT < 34.5 dBm Stability Ruggedness - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles - -80 -79 dB m FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm - -85 -83 dB m FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm - 1.5:1 2.5:1 VSWR RX Noise Power Input Return Loss POUT < 34.5 dBm POUT < 34.5 dBm PRELIMINARY DATA SHEET - Rev 1.3 01/2006 7 AND0041R Table 10: Electrical Characteristics for GSM900 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 880 - 915 MHz Input Power 0 3 5 dB m PAE 20 25 - % AC PR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -62 -73 -74 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency 8 ( FIN ) COMMENTS FIN = 880 to 915 MHz POUT set = +29 dBm PRELIMINARY DATA SHEET - Rev 1.3 01/2006 AND0041R Table 11: Electrical Characteristics for DCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, VRAMP = 1.6 V, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 1710 - 1785 MHz 0 3 5 dB m Output Power (PMAX) 32.5 33.5 - dB m Freq = 1710 to1785 MHz Degraded Output Power (POUT) 30.5 31.5 - dB m VBATT = 3.0 V, TC = 85 C PIN = 0 dBm 48 53 - % Freq = 1710 to1785 MHz Forward Isolation 1 - -40 -33 dB m TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -27 -20 dB m TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Second Harmonic - -25 -10 dB m POUT < 32.5 dBm Third Harmonic - -27 -15 dB m POUT < 32.5 dBm n * fo (n > 4), Fo [ 12.75 GHz - -34 -10 dB m POUT < 32.5 dBm Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMENTS VSWR = 8:1 All Phases , POUT < 32.5 dBm Stability Ruggedness - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -85 -80 dB m Input Return Loss - 1.5:1 2.5:1 VSWR POUT < 32.5 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to1880 MHz, POUT < 32.5 dBm POUT < 32.5 dBm PRELIMINARY DATA SHEET - Rev 1.3 01/2006 9 AND0041R Table 12: Electrical Characteristics for DCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 1710 - 1785 MHz Input Power 0 3 5 dB m PAE 25 30 - % AC PR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -64 -77 -76 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm Operating Frequency 10 ( FIN ) COMMENTS FIN = 1710 to 1785 MHz POUT set = +28.5 dBm PRELIMINARY DATA SHEET - Rev 1.3 01/2006 AND0041R Table 13: Electrical Characteristics for PCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, VRAMP = 1.6 V, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 1850 - 1910 MHz 0 3 5 dB m Output Power (PMAX) 32.3 33.3 - dB m Freq = 1850 to1910 MHz Degraded Output Power (POUT) 30.3 31.3 - dB m VBATT = 3.0 V, TC = 85 C PIN = 0 dBm 47 53 - % Freq = 1850 to1910 MHz Forward Isolation 1 - -39 -32 dB m TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -27 -20 dB m TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Second Harmonic - -17 -10 dB m POUT < 32.3 dBm Third Harmonic - -35 -15 dB m POUT < 32.3 dBm n * fo (n > 4), Fo [ 12.75 GHz - -33 -10 dB m POUT < 32.3 dBm Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMENTS VSWR = 8:1 All Phases , POUT < 32.3 dBm Stability Ruggedness - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -85 -80 dB m Input Return Loss - 1.5:1 2.5:1 VSWR POUT < 32.3 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to1990 MHz, POUT < 32.3 dBm POUT < 32.3 dBm PRELIMINARY DATA SHEET - Rev 1.3 01/2006 11 AND0041R Table 14: Electrical Characteristics for PCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 1850 - 1910 MHz Input Power 0 3 5 dB m PAE 25 30 - % AC PR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -64 -78 -77 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm Operating Frequency 12 ( FIN ) COMMENTS FIN = 1850 to 1910 MHz POUT set = +28.5 dBm PRELIMINARY DATA SHEET - Rev 1.3 01/2006 AND0041R APPLICATION INFORMATION BATTERY VOLTAGE 3 1nF ++ 47uF ++ 4 2.7pF ** 5 22nF ** DAC OUTPUT 6 10K* 27pF* 7 DCS/PCS_OUT BS GND TX_EN GND VBAT T AND0041R VCC_OUT CEXT GND VRAMP GND GSM_IN GSM850/900 RF INPUT GSM_OUT 8 16 DCS/PCS RF OUTPUT 15 14 13 12 11 10 GSM850/900 RF OUTPUT GND TX ENABLE 2 1nF ++ DCS/PCS_PIN VCC2 BAND SELECT GND DCS/PCS RF INPUT 1 17 VCC2 18 9 * Filtering may be required to filter noise from baseband. ** This component should be placed as close to the device pin as possible. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. Figure 3: Recommended Application Circuit PRELIMINARY DATA SHEET - Rev 1.3 01/2006 13 AND0041R PACKAGE OUTLINE Figure 4: Package Outline Figure 5: Branding Specification 14 PRELIMINARY DATA SHEET - Rev 1.3 01/2006 AND0041R Figure 6: Recommended PCB Layout Information PRELIMINARY DATA SHEET - Rev 1.3 01/2006 15 AND0041R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AND0041RM11P8 -20 C to +85C RoHS-compliant 18 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module Tape and Reel, 2500 pieces per reel AND0041RM11P9 -20 C to +85C RoHS-compliant 18 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module Partial Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 16 PRELIMINARY DATA SHEET - Rev 1.3 01/2006