N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description UniFETTM MOSFET is ON Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. * RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A * Low Gate Charge (Typ. 12.8 nC) * Low Crss (Typ. 9 pF) * 100% Avalanche Tested * Improved dv/dt Capability Applications * LCD/LED/PDP TV * Lighting * Uninterruptible Power Supply * AC-DC Power Supply D D G S D-PAK Absolute Maximum Ratings Symbol G I-PAK D G S S TC = 25oC unless otherwise noted. Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed FDD6N50TM / FDD6N50TM-WS / FDU6N50TU Unit 500 V 6 3.8 A A IDM Drain Current VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 6 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 89 0.71 W W/C -55 to +150 C 300 C FDD6N50TM / FDD6N50TM-WS / FDU6N50TU Unit (TC = 25C) - Derate Above 25C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds (Note 1) 24 A 30 V 270 mJ Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case, Max. 1.4 RJA Thermal Resistance, Junction-to-Ambient, Max. 83 (c)2006 Semiconductor Components Industries, LLC. October-2017,Rev. 3 C/W Publication Order Number: FDU6N50/D FDD6N50 / FDU6N50 -- N-Channel UniFETTM MOSFET FDD6N50 / FDU6N50 Part Number FDD6N50TM Top Mark FDD6N50 Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FDD6N50TM-WS FDD6N50S DPAK Tape and Reel 330 mm 16 mm 2500 units FDU6N50TU FDU6N50 IPAK Tube N/A N/A 75 units Electrical Characteristics Symbol TC = 25C unless otherwise noted. Parameter Conditions Min. Typ. Max Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.5 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3 A -- 0.76 0.9 gFS Forward Transconductance VDS = 40 V, ID = 3 A -- 2.5 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 720 940 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 95 190 pF -- 9 13.5 pF -- 6 20 ns -- 55 120 ns -- 25 60 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 6 A, VGS = 10 V, RG = 25 (Note 4) VDS = 400 V, ID = 6 A, VGS = 10 V (Note 4) -- 35 80 ns -- 12.8 16.6 nC -- 3.7 -- nC -- 5.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V trr Reverse Recovery Time -- 275 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 6 A, dIF/dt =100 A/s -- 1.7 -- C Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 6 A, VDD = 50 V, L=13.5 mH, RG = 25 , starting TJ = 25C. 3. ISD 6 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FDD6N50 / FDU6N50 -- N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Top : ID, Drain Current [A] 15 Bottom : VGS 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 10 ID , Drain Current [A] 20 Figure 2. Transfer Characteristics 10 Notes : 1. 250 s Pulse Test 2. TC = 25 5 0 0 10 20 30 40 150 0 10 25 -55 -1 10 Note 1. VDS = 40V 2. 250 s Pulse Test 50 VDS, Drain-Source Voltage [V] -2 10 2 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.5 IDR , Reverse Drain Current [A] RDS(ON) [ ],Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 VGS = 10V 1.5 VGS = 20V 1.0 0.5 1 10 0 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.0 -1 0 5 10 15 10 20 0.2 Figure 5. Capacitance Characteristics Coss Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 10 0 10 0.8 1.0 1.2 1.4 1.6 1.8 12 1 10 VDS = 100V VGS, Gate-Source Voltage [V] Ciss 100 0.6 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.4 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 4 VDS = 250V 10 VDS = 400V 8 6 4 2 Note : ID = 6A 0 0 5 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 15 FDD6N50 / FDU6N50 -- N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 0.9 1. VGS = 0 V 2. ID = 250 A 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 0.5 1. VGS = 10 V 2. ID = 3 A 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 2 100 150 200 o Figure 9. Maximum Safe Operating Area 10 50 TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 8 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 1 ms 10 ms DC 0 10 Notes : -1 10 o 1. TC = 25 C 6 4 2 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 VDS, Drain-Source Voltage [V] 100 TC, Case Temperature [] Figure 11. Transient Thermal Response Curve ZJC(t), Thermal Response [oC/W] Z JC(t), Thermal Response ID, Drain Current [A] 10 us 100 us 1 10 10 0 D = 0 .5 0 .2 N o te s : 1 . Z J C(t) = 1 .4 /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z J C(t) 0 .1 10 -1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] www.onsemi.com 4 10 0 10 1 125 150 FDD6N50 / FDU6N50 -- N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) FDD6N50 / FDU6N50 -- N-Channel UniFETTM MOSFET 50K 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FDD6N50 / FDU6N50 -- N-Channel UniFETTM MOSFET DUT FDD6N50 / FDU6N50 -- N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 FDD6N50 / FDU6N50 -- N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 17. TO-251 (I-PAK), Molded, 3-Lead, Option AA Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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